2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate, 1.2kV HBM Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 4) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Copper leadframe). Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) • • • • • • • Drain SOT-23 D Gate ESD PROTECTED, 1.2kV Gate Protection Diode TOP VIEW Maximum Ratings TOP VIEW Equivalent Circuit @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage (Note 1) Drain Current (Note 1) Thermal Characteristics Symbol VDSS VGSS Continuous Continuous Continuous @ 100°C Pulsed ID Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Value 60 ±20 115 73 800 Units V V Value 250 1.6 500 -55 to +150 Units mW mW/°C °C/W °C mA @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation Derating above TA = 25°C (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: S G Source Symbol PD RθJA TJ, TSTG @TA = 25°C unless otherwise specified @ TC = 25°C @ TC = 125°C @ TJ = 25°C @ TJ = 125°C Symbol Min Typ Max Unit BVDSS 60 70 V VGS = 0V, ID = 10μA IDSS ⎯ ⎯ µA VDS = 60V, VGS = 0V IGSS ⎯ ⎯ ⎯ 1.0 500 ±10 μA VGS = ±20V, VDS = 0V VGS(th) 1.2 ⎯ 2.0 6 5 V RDS (ON) ⎯ 3.5 3.0 gFS 80 ⎯ ⎯ mS VDS = VGS, ID = 250μA VGS = 5.0V, ID = 0.115A VGS = 10V, ID = 0.115A VDS = 10V, ID = 0.115A Ciss Coss Crss ⎯ ⎯ ⎯ 23 3.4 1.4 ⎯ ⎯ ⎯ pF pF pF VDS = 25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) ⎯ ⎯ 10 33 ⎯ ⎯ ns ns VDD = 30V, ID = 0.115A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω Ω Test Condition 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Halogen and Antimony Free. 3. Short duration pulse test used to minimize self-heating effect. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb203 Fire Retardants. 2N7002A Document number: DS31360 Rev. 4 - 2 1 of 4 www.diodes.com May 2008 © Diodes Incorporated 2N7002A 0.6 1 VDS = 5V Pulsed ID, DRAIN CURRENT (A) 0.5 NEW PRODUCT 0.4 0.3 0.2 0.1 TA = 150°C 0.1 T A = 85°C TA = 25°C TA = -55°C 0 0.01 1 2 3 4 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 5 2.5 9 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 8 2.0 7 6 1.5 5 1.0 VGS = 5V 4 3 VGS = 10V 0.5 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 On-Resistance vs. Drain Current & Gate Voltage 100 1.9 1.8 ID = 250µA CT, CAPACITANCE (pF) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.0 1.7 1.6 1.5 1.4 1.3 Ciss 10 Coss 1.2 1.1 1 1.0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature 2N7002A Document number: DS31360 Rev. 4 - 2 2 of 4 www.diodes.com Crss 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 40 May 2008 © Diodes Incorporated 2N7002A IS, SOURCE CURRENT (A) 0.1 TA = 150°C T A = 125°C 0.01 TA = 85°C 0.001 TA = 25°C TA = -55°C 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage Ordering Information (Note 5) Part Number 2N7002A-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information MN1 Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 YM NEW PRODUCT 1 MN1 = Product Type Marking Code YM = Date Code Marking Y = Year ex: V = 2008 M = Month ex: 9 = September 2010 X Mar 3 Apr 4 2011 Y May 5 Jun 6 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A B C TOP VIEW G H K J 2N7002A Document number: DS31360 Rev. 4 - 2 M D F L 3 of 4 www.diodes.com SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 F 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 0° 8° α All Dimensions in mm May 2008 © Diodes Incorporated 2N7002A Suggested Pad Layout Y NEW PRODUCT Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 2N7002A Document number: DS31360 Rev. 4 - 2 4 of 4 www.diodes.com May 2008 © Diodes Incorporated