DIODES SBM540_1

SPICE MODEL: SBM540
SBM540
5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
POWERMITEâ3
Features
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·
·
·
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Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
Low Forward Voltage Drop
E
A
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
P
Lead Free Finish, RoHS Compliant (Note 2)
3
G
Mechanical Data
Case: POWERMITEâ3
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Moisture Sensitivity: Level 1 per J-STD-020C
1
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish). e3
H
Min
Max
A
4.03
4.09
B
6.40
6.61
C
.889 NOM
D
1.83 NOM
1.10
K
C
H
5.01
5.17
J
4.37
4.43
.178 NOM
K
L
.71
L
PIN 1
Marking: Type Number, See also Sheet 3
Ordering Information, See Sheet 3
PIN 3, BOTTOMSIDE
HEAT SINK
PIN 2
Note:
Weight: 0.072 grams (approximate)
Pins 1 & 2 must be electrically
connected at the printed circuit board.
1.14
.178 NOM
G
D
C
Dim
E
2
M
Polarity: See Diagram
Maximum Ratings
J
B
·
·
POWERMITEâ3
.77
M
.36
.46
P
1.73
1.83
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol
Value
Unit
VRRM
VRWM
VR
40
V
VR(RMS)
28
V
IO
5
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
@ TC = 90°C
IFSM
100
A
Typical Thermal Resistance Junction to Soldering Point
RqJS
3.2
°C/W
Tj
-55 to +125
°C
TSTG
-55 to +150
°C
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (see also Figure 5)
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
V(BR)R
40
¾
¾
V
IR = 0.5mA
Forward Voltage
VFM
¾
¾
¾
¾
0.48
0.45
0.59
0.56
0.52
¾
¾
¾
V
IF = 5A, TS = 25°C
IF = 5A, TS = 125°C
IF = 10A, TS = 25°C
IF = 10A, TS = 125°C
Reverse Current (Note 1)
IRM
¾
¾
0.05
2.5
0.5
20
mA
TS = 25°C, VR = 40V
TS = 100°C, VR = 40V
Total Capacitance
CT
¾
250
¾
pF
f = 1.0MHz, VR = 4.0V DC
Characteristic
Reverse Breakdown Voltage (Note 1)
Notes:
Test Condition
1. Short duration test pulse used to minimize self-heating effect.
2. RoHS revision 13.2.2003. High Temperature Solder Exemption Applied, see EU Directive Annex Note 7.
DS30297 Rev. 6 - 2
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SBM540
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IR, INSTANTANEOUS REVERSE CURRENT (mA)
IF, INSTANTANEOUS FORWARD CURRENT (A)
100
100
10
TJ = 100°C
1.0
TJ = 25°C
0.1
0.01
0
0.2
0.4
0.6
1.0
TJ = 100°C
TJ = 75°C
0.1
0.01
TJ = 25°C
0.001
0.8
0
5
10
15
20
30
25
35
40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
1000
125
Single Half-Sine-Wave
TC = 90°C
CT, TOTAL CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
TJ = 125°C
10
100
75
50
25
0
Tj = 25°C
f = 1MHz
100
10
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Forward Surge Current
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0.1
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Total Capacitance
vs. Reverse Voltage
SBM540
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
IF, DC FORWARD CURRENT (A)
7.5
6.0
Note 3
4.5
Note 4
3.0
1.5
Note 5
0
0
25
50
75
100
125
150
4
4
3.5
2.5
2
1.5
0.5
0
0
5
8
7
9 10
3
4
6
1
2
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 6 Forward Power Dissipation
3. TA = TSOLDERING POINT, RqJS = 3.2°C/W, RqSA = 0°C/W.
4. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. RqJA in range of 15-30°C/W.
5. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of
60-75°C/W.
Ordering Information
Notes:
5
1
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 DC Forward Current Derating
Notes:
dc
3
(Note 6)
Device
Packaging
Shipping
SBM540-13-F
POWERMITEâ3
5000/Tape & Reel
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
SBM540
YYWW(K)
SBM540 = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 02 for 2002
WW = Week code 01 to 52
(K) = Factory Designator
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
POWERMITE is a registered trademark of Microsemi Corporation.
DS30297 Rev. 6 - 2
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SBM540