Microsemi MAD1109E3 Switching diode array steering diode tvs array Datasheet

MAD1109 and MAD1109e3
Switching Diode Array
Steering Diode TVS Array™
SCOTTSDALE DIVISION
APPEARANCE
WWW . Microsemi .C OM
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated
junctions fabricated by a planar process and mounted in a 14-PIN package
for use as steering diodes protecting up to seven I/O ports from ESD, EFT,
or surge by directing them either to the positive side of the power supply
line or to ground (see figure 1). An external TVS diode may be added
between the positive supply line and ground to prevent overvoltage on the
supply rail. They may also be used in fast switching core-driver
applications. This includes computers and peripheral equipment such as
magnetic cores, thin-film memories, plated-wire memories, etc., as well as
decoding or encoding applications. These arrays offer many advantages of
integrated circuits such as high-density packaging and improved reliability.
This is a result of fewer pick and place operations, smaller footprint, smaller
weight, and elimination of various discrete packages that may not be as
user friendly in PC board mounting. They are available with either Tin-Lead
plating termination or as RoHS Compliant with annealed matte-Tin finish by
adding an e”3” suffix to the part number.
Top Viewing Pin Layout
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
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•
•
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APPLICATIONS / BENEFITS
• Low capacitance steering diode protection for high
frequency data lines
• RS-232 & RS-422 Interface Networks
• Ethernet: 10 Base T
• Computer I / O Ports
• LAN
• Switching Core Drivers
7 Diode Array / protects 7 lines
Molded 14-Pin Dual-In-Line Package
UL 94V-0 Flammability Classification
Low Capacitance 1.5 pF per diode
Switching speeds less than 5 ns
RoHS Compliant devices available by adding “e3” suffix
IEC 61000-4 compatible
61000-4-2 (ESD): Air 15kV, contact – 8 kV
61000-4-4 (EFT): 40A – 5/50 ns
61000-4-5 (surge): 12A, 8/20 µs
MAXIMUM RATINGS
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MECHANICAL AND PACKAGING
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified
PART
NUMBER
MAD1109
MAD1109e3
Copyright © 2005
6-28-2005 REV L
C
@0V
REVERSE
RECOVERY
TIME
trr
FORWARD
VOLTAGE
VF
IF = 10 mA
FORWARD
VOLTAGE
VF
IF = 100 mA
pF
ns
V
V
V
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
V
MIN
MAX
MAX
@VR
MAX
@VR
TYP
MAX
MAX
MAX
90
75
0.200
20
300
20
1.5
5.0
1.00
1.20
BREAKDOWN
VOLTAGE
VBR
@ IBR =100µA
LEAKAGE
CURRENT
IR
TA = 25°C
LEAKAGE
CURRENT
IR
TA = 150°C
CAPACITANCE
µA
µA
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
MAD1109, e3
• CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0 flammability
classification
• TERMINALS: Tin-Lead or RoHS Compliant
annealed matte-Tin plating solderable per MIL-STD750 method 2026
• MARKING: MSC logo, MAD1109 or MAD1109e3 and
date code. Pin #1 is to the left of the dot or indent on
top of package.
• WEIGHT: 0.997 grams (approximate)
• Carrier tubes: 25 pcs (Standard)
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Forward Surge Current: 2 Amps (8.3 ms)
12 Amps (8/20 µs)
Continuous Forward Current: 400 mA (one diode)
Power Dissipation (PD): 1500 mW (total)
Solder temperatures: 260°C for 10 s (maximum)
MAD1109 and MAD1109e3
Switching Diode Array
Steering Diode TVS Array™
SCOTTSDALE DIVISION
VBR
VRWM
VF
IR
C
WWW . Microsemi .C OM
SYMBOLS & DEFINITIONS
Definition
Symbol
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
OUTLINE AND CIRCUIT
Supply rail (+VCC)
I/O Port
GND (or -VCC)
STEERING DIODE APPLICATION
figure 1
INCHES
DIM
MIN
MILLIMETERS
MAX
MIN
MAX
A
0.740
0.780
18.80
19.81
B
0.235
0.265
5.969
6.731
C
0.120
0.140
3.048
3.556
D
0.270
0.330
6.858
8.382
E
0.320
0.380
8.128
F
0.100 BSC
9.652
2.540 BSC
G
0.015
0.021
0.381
0.533
H
0.017
0.023
0.431
0.584
0.140
0.160
3.556
4.064
0.040
0.070
1.016
1.778
OUTLINE
Copyright © 2005
6-28-2005 REV L
MAD1109, e3
I
J
CIRCUIT CONFIGURATION
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
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