SPICE MODEL: MMDT4146 MMDT4146 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · · Complementary Pair One 4124-Type NPN, One 4126-Type PNP SOT-363 E1 Epitaxial Planar Die Construction B C Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Case: SOT-363 C1 B2 E2 Lead Free/RoHS Compliant (Note 3) Mechanical Data · · A B1 C2 G H K M J Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · · Terminal Connections: See Diagram D F L E1, B1, C1 = PNP4126 Section E2, B2, C2 = NPN4124 Section Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42). C2 B1 E1 E2 B2 C1 All Dimensions in mm Marking (See Page 3): K12 Ordering & Date Code Information: See Pages 2 & 3 Weight: 0.006 grams (approx.) Maximum Ratings, NPN 4124 Section Characteristic @ TA = 25°C unless otherwise specified Symbol NPN 4124 Section Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous (Note 1) IC 200 mA Power Dissipation (Note 1, 2) Pd 200 mW RqJA 625 °C/W Thermal Resistance, Junction to Ambient (Note 1) Maximum Ratings, PNP 4126 Section Characteristic @ TA = 25°C unless otherwise specified Symbol PNP 4126 Section Unit Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -4 V IC -200 mA Pd 200 mW RqJA 625 °C/W Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead. DS30162 Rev. 9 - 2 1 of 5 www.diodes.com MMDT4146 ã Diodes Incorporated Electrical Characteristics, NPN 4124 Section Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 30 ¾ V Collector-Emitter Breakdown Voltage V(BR)CEO 25 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 6.0 V IE = 10mA, IC = 0 Collector Cutoff Current ICBO ¾ 50 nA VCB = 20V, IE = 0V Emitter Cutoff Current IEBO ¾ 50 nA VEB = 3.0V, IC = 0V hFE 120 60 360 ¾ ¾ IC = 2.0mA, VCE = 1.0V IC = 50mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.30 V IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) ¾ 0.95 V IC = 50mA, IB = 5.0mA Output Capacitance Cobo ¾ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Small Signal Current Gain hfe 120 480 ¾ Current Gain-Bandwidth Product fT 300 ¾ MHz VCE = 1.0V, IC = 2.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz OFF CHARACTERISTICS (Note 4) IC = 10mA, IE = 0 ON CHARACTERISTICS (Note 4) DC Current Gain SMALL SIGNAL CHARACTERISTICS Electrical Characteristics, PNP 4126 Section Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -25 ¾ V IC = -10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -25 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage OFF CHARACTERISTICS (Note 4) V(BR)EBO -4.0 ¾ V IE = -10mA, IC = 0 Collector Cutoff Current ICBO ¾ -50 nA VCB = -20V, IE = 0V Emitter Cutoff Current IEBO ¾ -50 nA VEB = -3.0V, IC = 0V hFE 120 60 360 ¾ ¾ IC = -2.0mA, VCE = -1.0V IC = -50mA, VCE = -1.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.40 V IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) ¾ -0.95 V IC = -50mA, IB = -5.0mA Output Capacitance Cobo ¾ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = -1.0V, IC = -2.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz ON CHARACTERISTICS (Note 4) DC Current Gain SMALL SIGNAL CHARACTERISTICS Small Signal Current Gain hfe 120 480 ¾ Current Gain-Bandwidth Product fT 250 ¾ MHz Noise Figure NF ¾ 4.0 dB Ordering Information Notes: VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz (Note 5) Device Packaging Shipping MMDT4146-7-F SOT-363 3000/Tape & Reel 4. Short duration test pulse used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS30162 Rev. 9 - 2 2 of 5 www.diodes.com MMDT4146 Marking Information YM K12= Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K12 Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 100 f = 1MHz CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 10 Cibo 50 Cobo 1 0.1 0 0 25 50 100 75 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device) 100 10 10 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN 1 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage (PNP-4126) TA = 125°C 100 TA = -25°C TA = +25°C 10 IC IB = 10 1 0.1 VCE = 1.0V 0.01 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current (PNP-4126) DS30162 Rev. 9 - 2 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current (PNP-4126) 3 of 5 www.diodes.com MMDT4146 15 f = 1MHz CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1.0 0.9 0.8 0.7 0.6 IC IB = 10 10 5 Cibo Cobo 0.5 1 10 0 0.1 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current (PNP-4126) 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 6, Input and Output Capacitance vs. Collector-Base Voltage (NPN-4124) 1000 1 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE hFE, DC CURRENT GAIN 1 TA = 125°C 100 TA = +25°C TA = -25°C 10 IC IB = 10 0.1 VCE = 1.0V 0.01 1 1 0.1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 7, Typical DC Current Gain vs Collector Current (NPN-4124) 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 8, Typical Collector-Emitter Saturation Voltage vs. Collector Current (NPN-4124) 10 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE IC IB = 10 1 0.1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 9, Typical Base-Emitter Saturation Voltage vs. Collector Current (NPN-4124) DS30162 Rev. 9 - 2 4 of 5 www.diodes.com MMDT4146 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated. DS30162 Rev. 9 - 2 5 of 5 www.diodes.com MMDT4146