IXYS IXGK72N60A3H1 Genx3 600v igbt w/diode Datasheet

Advance Technical Information
IXGK72N60A3H1
IXGX72N60A3H1
GenX3TM 600V IGBT
w/Diode
VCES
IC110
VCE(sat)
tfi(typ)
Ultra-Low Vsat PT IGBTs for
up to 5kHz Switching
=
=
≤£
=
600V
72A
1.35V
250ns
TO-264 (IXGK)
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C (Limited by Leads)
75
A
IC110
TC = 110°C
72
A
IF110
TC = 110°C
ICM
TC = 25°C, 1ms
SSOA
VGE = 15V, TVJ = 125°C, RG = 3Ω
(RBSOA)
Clamped Inductive Load
PC
TC = 25°C
68
A
400
A
ICM = 150
A
@ VCE ≤ 600
V
540
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
1.13 / 10
20..120 / 4.5..27
Nm/lb.in.
N/lb.
TJ
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TL
Maximum Lead Temperature for Soldering
300
°C
TSOLD
1.6mm (0.062 in.) from Case for 10s
260
°C
Weight
TO-264
PLUS247
10
6
g
g
G
G
G
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 60A, VGE = 15V, Note 1
3.0
TJ = 125°C
5.0
(TAB)
ES
C
= Collector
TAB = Collector
Features
z
z
z
z
Optimized for Low Conduction Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
V
300
5
μA
mA
±100
nA
1.35
V
z
z
z
z
z
z
z
z
z
© 2009 IXYS CORPORATION, All Rights Reserved
CD
G = Gate
E = Emitter
z
Characteristic Values
Min.
Typ.
Max.
E
PLUS247 (IXGX)
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
(TAB)
C
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
DS100144(04/09)
IXGK72N60A3H1
IXGX72N60A3H1
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
IC = 60A, VCE = 10V, Note 1
48
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
Qgc
IC = 60A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
Inductive load, TJ = 25°°C
IC = 50A, VGE = 15V
TO-264 (IXGK) Outline
75
S
6600
360
80
pF
pF
pF
230
40
80
nC
nC
nC
31
ns
34
1.4
ns
mJ
320
ns
250
ns
Eoff
3.5
mJ
td(on)
tri
Eon
td(off)
tfi
Eoff
29
34
2.6
510
375
6.5
ns
ns
mJ
ns
ns
mJ
0.15
0.23 °C/W
°C/W
tfi
VCE = 480V, RG = 3Ω
Inductive load, TJ = 125°°C
IC = 50A, VGE = 15V
VCE = 480V, RG = 3Ω
RthJC
RthCS
Reverse Diode (FRED)
DIM
INCHES
MIN
A
A1
b
b1
b2
c
D
E
e
J
K
L
L1
ØP
Q
Q1
ØR
ØR1
S
0.185
0.102
0.037
0.087
0.110
0.017
1.007
0.760
.215 BSC
0.000
0.000
0.779
0.087
0.122
0.240
0.330
0.155
0.085
0.243
0.209
0.118
0.055
0.102
0.126
0.029
1.047
0.799
0.010
0.010
0.842
0.102
0.138
0.256
0.346
0.187
0.093
0.253
MILLIMETERS
MIN
MAX
4.70
2.59
0.94
2.21
2.79
0.43
25.58
19.30
5.46 BSC
0.00
0.00
19.79
2.21
3.10
6.10
8.38
3.94
2.16
6.17
5.31
3.00
1.40
2.59
3.20
0.74
26.59
20.29
0.25
0.25
21.39
2.59
3.51
6.50
8.79
4.75
2.36
6.43
PLUS247TM (IXGX) Outline
(TJ = 25°C, Unless Otherwise Specified)
Symbol
Test Conditions
Characteristic Values
Min.
Typ.
Max.
VF
IF = 60A, VGE = 0V, Note 1
IRM
IF = 60A, VGE = 0V,
trr
IF = 60A, -di/dt = 200A/μs, VR = 300V
TJ = 150°C
1.6
1.4
TJ = 100°C
8.3
A
140
ns
RthJC
2.0
1.8
V
V
0.3 °C/W
Terminals:
1 - Gate
3 - Source (Emitter)
2 - Drain (Collector) 4 - Drain (Collector)
Dim.
Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
MAX
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGK72N60A3H1
IXGX72N60A3H1
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
120
100
VGE = 15V
13V
11V
300
270
240
9V
80
60
IC - Amperes
IC - Amperes
330
VGE = 15V
13V
11V
7V
40
210
9V
180
150
120
90
7V
60
20
30
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
1
2
Fig. 3. Output Characteristics
@ 125ºC
5
6
7
8
125
150
7.5
8.0
1.4
VGE = 15V
13V
11V
9V
80
60
7V
40
20
VGE = 15V
1.3
VCE(sat) - Normalized
100
IC - Amperes
4
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
120
1.2
I
C
= 120A
I
C
= 60A
I
C
= 30A
1.1
1.0
0.9
0.8
5V
0.7
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50
1.8
-25
0
VCE - Volts
25
50
75
100
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
200
3.2
3.0
180
TJ = 25ºC
2.8
160
I
2.4
C
2.2
140
= 120A
60A
30A
IC - Amperes
2.6
VCE - Volts
3
VCE - Volts
VCE - Volts
2.0
1.8
1.6
TJ = 125ºC
25ºC
- 40ºC
120
100
80
60
1.4
40
1.2
20
1.0
0.8
0
5
6
7
8
9
10
11
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
12
13
14
15
4.0
4.5
5.0
5.5
6.0
VGE - Volts
6.5
7.0
IXGK72N60A3H1
IXGX72N60A3H1
Fig. 7. Transconductance
Fig. 8. Gate Charge
130
16
TJ = - 40ºC
120
100
VGE - Volts
80
125ºC
70
I C = 60A
I G = 10 mA
12
25ºC
90
g f s - Siemens
VCE = 300V
14
110
60
50
10
8
6
40
4
30
20
2
10
0
0
0
20
40
60
80
100
120
140
160
180
200
0
20
40
60
80
IC - Amperes
100 120 140 160
180 200 220 240
QG - NanoCoulombs
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
160
100,000
f = 1 MHz
10,000
120
IC - Amperes
Capacitance - PicoFarads
140
Cies
1,000
Coes
100
Cres
10
0
5
10
15
20
25
30
35
40
100
80
60
40
TJ = 125ºC
20
RG = 3Ω
dV / dt < 10V / ns
0
100
150
200
250
300
350
400
450
500
550
600
650
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions.
IXYS REF: G_72N60A3(76)4-23-09-C
IXGK72N60A3H1
IXGX72N60A3H1
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
9
16
I
= 100A
VCE = 480V
5
4
I C = 50A
12
4.50
10
3.75
8
3.00
TJ = 25ºC
6
3
4
2
4
1.50
1
2
0.75
0
0
2
I C = 25A
0
0
5
10
15
20
25
30
35
6
20
30
40
50
RG - Ohms
18
C
= 100A
8
3
I C = 50A
6
2
4
2
2
0
65
75
85
95
105
115
1100
378
I
900
I
372
C
= 50A
800
369
700
I
500
360
400
0
5
10
15
380
540
530
360
VCE = 480V
410
280
370
260
330
TJ = 25ºC
220
60
70
80
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
90
t f - Nanoseconds
570
450
RG = 3Ω , VGE = 15V
50
35
580
490
td(off) - - - -
40
30
400
t d(off) - Nanoseconds
340
30
25
I
C
500
= 25A, 50A, 100A
340
460
320
420
300
380
280
340
tf
260
290
240
250
100
220
td(off) - - - -
RG = 3Ω , VGE = 15V
VCE = 480V
25
35
45
55
65
75
85
95
TJ - Degrees Centigrade
105
115
300
260
220
125
t d(off) - Nanoseconds
TJ = 125ºC
20
20
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
380
240
600
= 25A
RG - Ohms
610
300
C
363
0
125
400
320
1000
= 100A
C
375
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
tf
1200
VCE = 480V
TJ - Degrees Centigrade
360
1300
381
366
1
I C = 25A
55
- MilliJoules
4
on
10
5
td(off) - - - -
TJ = 125ºC, VGE = 15V
384
E
I
45
0.00
100
1400
tf
387
5
12
35
90
t d(off) - Nanoseconds
VCE = 480V
25
80
390
6
RG = 3Ω , VGE = 15V
14
Eoff - MilliJoules
----
t f - Nanoseconds
16
Eon
70
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
7
Eoff
60
2.25
IC - Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
t f - Nanoseconds
5.25
TJ = 125ºC
- MilliJoules
6
---
VCE = 480V
8
14
6.00
RG = 3Ω , VGE = 15V
on
Eon -
7
----
Eon
E
10
TJ = 125ºC , VGE = 15V
16
- MilliJoules
Eoff
8
on
12
6.75
Eoff
E
Eoff - MilliJoules
14
C
18
Eoff - MilliJoules
18
IXGK72N60A3H1
IXGX72N60A3H1
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
120
110
TJ = 125ºC , VGE = 15V
100
I
80
C
90
= 100A
80
70
60
I
50
C
60
= 50A
I
C
= 25A
50
40
40
30
30
20
20
10
- Nanoseconds
70
5
10
15
20
25
30
td(on) - - - -
80
70
VCE = 480V
TJ = 25ºC
34
RG = 3Ω , VGE = 15V
33
60
TJ = 125ºC
31
40
30
30
29
20
28
10
27
20
35
32
50
0
10
0
35
tr
30
40
50
60
70
80
90
t d(on) - Nanoseconds
VCE = 480V
d(on)
90
td(on) - - - -
t
t r - Nanoseconds
100
90
120
tr
t r - Nanoseconds
110
26
100
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
100
35
90
34
33
I C = 100A
70
tr
60
RG = 3Ω , VGE = 15V
td(on) - - - -
32
31
VCE = 480V
50
30
40
29
I C = 50A
30
t d(on) - Nanoseconds
t r - Nanoseconds
80
28
I
20
C
= 25A
27
10
25
35
45
55
65
75
85
95
105
115
26
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions.
IXYS REF: G_72N60A3(76)4-23-09-C
IXGK72N60A3H1
IXGX72N60A3H1
Fig. 21
Fig. 22
Fig. 24
Fig. 25
Fig. 23
Z(th)JC - [ ºC / W ]
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
s]
Pulse Width [[ms]
Fig. 26 Maximum transient thermal impedance junction to case (for diode)
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_72N60A3(76)4-23-09-C
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