DIODES ZXMP3F30FHTA

Part no.
ZXMP3F30FH
30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET
Summary
V(BR)DSS
RDS(on) (Ω)
ID (A)
0.080 @ VGS= -10V
-4.0
(V)
-30
0.140 @ VGS= -4.5V
Description
This new generation Trench MOSFET from Zetex has been designed to minimize the
on-state resistance (RDS(on)) and yet maintain superior switching performance.
Features
•
Low on-resistance
•
Fast switching speed
•
4.5V gate drive capability
•
Thermally enhanced SOT23 package
Applications
•
Power management
•
Portable Equipment
•
Battery charging
Ordering information
Device
ZXMP3F30FHTA
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7”
8mm
3,000
Pinout – top view
Device marking
KPA
I
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Absolute Maximum Ratings
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-Source voltage
VDSS
-30
V
Gate-Source voltage
VGS
±20
V
ID
-3.4
V
Continuous Drain current @ VGS= -10V; TA=25°C
@ VGS= -10V; TA=70°C
@ VGS= -10V; TA=25°C
@ VGS= -10V; TL=25°C
Pulsed Drain current
(b)
(b)
-2.7
(a)
-2.8
(d)
-4.0
(c)
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TL =25°C
Linear derating factor
(b)
(c)
(a)
(b)
(d)
Operating and storage temperature range
IDM
-15.3
A
IS
-2
A
ISM
-15.3
A
PD
0.95
7.6
W
mW/°C
PD
1.4
11.2
W
mW/°C
PD
1.96
15.7
W
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Value
Unit
RθJA
131
°C/W
RθJA
89
°C/W
RθJL
63.77
°C/W
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Junction to lead
(a)
(b)
(d)
NOTES:
(a)
(b)
(c)
(d)
For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
Mounted on FR4 PCB measured at t ≤ 10 sec.
Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
Thermal resistance from junction to solder-point (at the end of the drain lead).
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Thermal Characteristics
1.0
Max Power Dissipation (W)
-ID Drain Current (A)
10 RDS(on)
Limit
1
DC
1s
100ms
100m
10ms
T amb=25°C
1ms
25mm x 25mm
10m
1oz FR4
100m
100µs
1
10
-VDS Drain-Source Voltage (V)
0.8
25mm x 25mm
1oz FR4
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160
Temperature (°C)
Safe Operating Area
Derating Curve
T amb=25°C
100
25mm x 25mm
1oz FR4
80
D=0.5
60
40 D=0.2
D=0.1
D=0.05
20
0
100µ
Single Pulse
1m
10m 100m
1
10
100
Pulse Width (s)
1k
Max Power Dissipation (W)
Thermal Resistance (°C/W)
100
120
Transient Thermal Impedance
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Single Pulse
T amb=25°C
25mm x 25mm
1oz FR4
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
3
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Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symb
ol
Min.
Drain-Source breakdown
voltage
V(BR)DSS
-30
Zero Gate voltage Drain
current
IDSS
Gate-Body leakage
IGSS
Gate-Source threshold
voltage
VGS(th)
Static Drain-Source
( )
on-state resistance *
RDS(on)
Forward
( ) (†)
Transconductance *
gfs
Input capacitance
Typ.
Max.
Unit Conditions
Static
V
ID = -250μA, VGS=0V
-1.0
µA
VDS=-30V, VGS=0V
100
nA
VGS=±20V, VDS=0V
V
ID= -250μA, VDS=VGS
Ω
VGS= -10V, ID= -2.5A
VGS= -4.5V, ID= -1.9A
5
S
VDS= -15V, ID= -3A
Ciss
370
pF
Output capacitance
Coss
72
pF
Reverse transfer
capacitance
Crss
38
pF
Turn-on-delay time
td(on)
1.3
ns
Rise time
tr
2.6
ns
VDD= -15V, VGS= -10V
ID= -1A
RG ≅ 6.0Ω,
Dynamic
-1.0
0.080
0.140
(†)
Switching
VDS= -15V, VGS=0V
f=1MHz
(‡) (†)
Turn-off delay time
td(off)
49
ns
Fall time
tf
22
ns
Total Gate charge
Qg
7
nC
Gate-Source charge
Qgs
1.2
nC
Gate-Drain charge
Qgd
1.3
nC
VSD
-0.80
trr
14.6
ns
Qrr
9.5
nC
Gate charge
VDS= -15V, VGS= -10V
ID= -3A
Source–Drain diode
Diode forward voltage
Reverse recovery time
( )
*
(‡)
Reverse recovery charge
(‡)
-1.2
V
IS= -1.7A,VGS=0V
IS= -1.5A,di/dt=100A/μs
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
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Typical Characteristics
5V
7V
4V
3.5V
1
3V
0.1
VGS
T = 25°C
4.5V
4V
3.5V
3V
1
2.5V
0.1
VGS
0.01
0.1
1
10
0.1
-VDS Drain-Source Voltage (V)
Normalised RDS(on) and VGS(th)
VDS = 10V
T = 150°C
1
T = 25°C
0.1
2
3
4
-VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
3V
10
T = 25°C
VGS
4.5V
4V
5V
7V
0.1
10V
0.1
1
10
-ID Drain Current (A)
On-Resistance v Drain Current
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VGS = 10V
1.6
ID = 3A
1.4
RDS(on)
1.2
1.0
0.8
VGS = VDS
0.6
0.4
-50
VGS(th)
ID = 250uA
0
50
100
Tj Junction Temperature (°C)
150
Normalised Curves v Temperature
3.5V
1
10
Output Characteristics
-ISD Reverse Drain Current (A)
10
1
-VDS Drain-Source Voltage (V)
Output Characteristics
-ID Drain Current (A)
7V
10
0.01
RDS(on) Drain-Source On-Resistance (Ω)
10V
T = 150°C
4.5V
-ID Drain Current (A)
-ID Drain Current (A)
10V
10
10
1
T = 150°C
T = 25°C
0.1
0.01
Vgs = 0V
1E-3
0.2
0.4
0.6
0.8
1.0
1.2
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
5
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Typical Characteristics
C Capacitance (pF)
VGS = 0V
500
f = 1MHz
400
300
CISS
COSS
CRSS
200
100
0
1
10
-VGS Gate-Source Voltage (V)
600
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
10
9
8
7
6
5
4
3
2
1
0
ID = 3A
VDS = 15V
0
1
2
3
4
Q - Charge (nC)
5
6
7
Gate-Source Voltage v Gate Charge
Test Circuits
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Packaging Details – SOT23
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Definitions
Product change
Diodes Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s
application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc.
with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or
otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence),
breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of
these circuit applications, under any circumstances.
Life support
Diodes Inc. products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
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To ensure quality of service and products we strongly advise the purchase of parts directly from Diodes Zetex Semiconductors or one of our
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ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
being affected should be replaced.
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Diodes Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding
regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the
use of hazardous substances and/or emissions.
All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE
and ELV directives.
Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2008 Published by Diodes Incorporated
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