Diodes DMN66D0LT N-channel enhancement mode mosfet Datasheet

DMN66D0LT
N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
Features
Mechanical Data
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•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1KV (HBM)
•
•
•
•
•
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-523
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.002 grams (approximate)
•
•
•
•
•
•
•
Drain
SOT-523
D
Gate
Gate
Protection
Diode
ESD PROTECTED, 1KV
TOP VIEW
S
G
Source
TOP VIEW
EQUIVALENT CIRCUIT
Maximum Ratings (@TA = +25°C unless otherwise specified)
Characteristic
Drain-Source Voltage
Gate-Source Voltage (Note 1)
Drain Current (Note 1)
Symbol
VDSS
VGSS
Continuous
Continuous
Continuous @ +100°C
Pulsed
ID
Value
60
±20
115
73
800
Units
V
V
Value
200
625
-55 to +150
Units
mW
°C/W
°C
mA
Thermal Characteristics (@TA = +25°C unless otherwise specified)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Electrical Characteristics (@TA = +25°C unless otherwise specified)
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
@ TC = +25°C
@ TC = +125°C
@ TJ = +25°C
@ TJ = +125°C
Symbol
Min
Typ
Max
Unit
BVDSS
60
70
V
VGS = 0V, ID = 10µA
IDSS


µA
VDS = 60V, VGS = 0V
IGSS



1.0
500
±5
µA
VGS = ±20V, VDS = 0V
VGS(th)
1.2

gFS
80
2.0
6
5

V
RDS (ON)

3.5
3.0

mS
VDS = VGS, ID = 250µA
VGS = 5.0V, ID = 0.115A
VGS = 10V, ID = 0.115A
VDS = 10V, ID = 0.115A
Ciss
Coss
Crss



23
3.4
1.4



pF
pF
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
tD(ON)
tD(OFF)


10
33


ns
ns
VDD = 30V, ID = 0.115A, RL = 150Ω,
VGEN = 10V, RGEN = 25Ω
Ω
Test Condition
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
DMN66D0LT
Document number: DS31530 Rev. 3 - 2
1 of 4
www.diodes.com
August 2014
© Diodes Incorporated
DMN66D0LT
0.6
1
VDS = 5V
Pulsed
ID, DRAIN CURRENT (A)
0.5
NEW PRODUCT
0.4
0.3
0.2
0.1
TA = 150°C
0.1
TA = 85°C
TA = 25°C
TA = -55°C
0
0.01
1
2
3
4
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
5
2.5
9
R DS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
8
2.0
7
6
1.5
5
1.0
VGS = 5V
4
3
VGS = 10V
0.5
2
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
100
1.9
1.8
ID = 250µA
CT, CAPACITANCE (pF)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
2.0
1.7
1.6
1.5
1.4
1.3
Ciss
10
Coss
1.2
1.1
1
1.0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
DMN66D0LT
Document number: DS31530 Rev. 3 - 2
2 of 4
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Crss
0
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Total Capacitance
40
August 2014
© Diodes Incorporated
DMN66D0LT
IS, SOURCE CURRENT (A)
NEW PRODUCT
1
0.1
TA = 150°C
TA = 125°C
0.01
TA = 85°C
0.001
TA = 25°C
TA = -55°C
0.0001
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
Ordering Information (Note 4)
Part Number
DMN66D0LT-7
Note:
Case
SOT-523
Packaging
3000/Tape & Reel
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MN1
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
2
YM
2010
X
Mar
3
Apr
4
MN1 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: V = 2008
M = Month ex: 9 = September
2011
Y
May
5
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
Package Outline Dimensions
A
B C
G
H
K
J
DMN66D0LT
Document number: DS31530 Rev. 3 - 2
M
N
D
L
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SOT-523
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
0.50


G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
0°
8°
α

All Dimensions in mm
August 2014
© Diodes Incorporated
DMN66D0LT
Suggested Pad Layout
Y
NEW PRODUCT
Z
C
X
Dimensions Value (in mm)
Z
1.8
X
0.4
Y
0.51
C
1.3
E
0.7
E
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Copyright © 2014, Diodes Incorporated
www.diodes.com
DMN66D0LT
Document number: DS31530 Rev. 3 - 2
4 of 4
www.diodes.com
August 2014
© Diodes Incorporated
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