DIODES DSS9110Y

DSS9110Y
100V LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
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•
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Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Complementary NPN Type Available (DSS8110Y)
Ultra Small Surface Mount Package
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free “Green” Device (Note 2)
ESD rating: 400V-MM, 8KV-HBM
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Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
C
C
C
E
C
C
B
B
E
Top View
Top View
Pin Out Configuration
Device Symbol
Ordering Information (Note 3)
Product
DSS9110Y-7
Notes:
Marking
ZP5
Reel size (inches)
7
Tape width (mm)
8mm
Quantity per reel
3,000
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
ZP5
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb
2
DSS9110Y
Document number: DS31678 Rev. 2 - 2
Mar
3
YM
Marking Information
2012
Z
Apr
4
ZP5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
2013
A
May
5
Jun
6
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2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov
N
Dec
D
October 2010
© Diodes Incorporated
DSS9110Y
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current – Continuous
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
-120
-100
-5
-1
-3
-0.3
Unit
V
V
V
A
A
A
Symbol
PD
RθJA
TJ, TSTG
Value
625
200
-55 to +150
Unit
mW
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes:
4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
0.8
10
IC, COLLECTOR CURRENT (A)
PD, POWER DISSIPATION (W)
Pw = 100µs
0.6
0.4
R θJA = 200°C/W
0.2
1
0.1
0.01
0.001
0.1
0
0
50
100
150
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
1
10
100
1,000
VCE, COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Safe Operating Area
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 163°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = 0.005
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
t1
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
10
100
1,000
Fig. 3 Transient Thermal Response
DSS9110Y
Document number: DS31678 Rev. 2 - 2
2 of 6
www.diodes.com
October 2010
© Diodes Incorporated
DSS9110Y
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCEO
BVEBO
Min
-120
-100
-5
Typ
⎯
⎯
⎯
Collector Cutoff Current
ICBO
⎯
⎯
Collector Cutoff Current
Emitter Cutoff Current
ICES
IEBO
⎯
⎯
hFE
150
150
150
125
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
16
⎯
27
230
165
160
DC Current Gain (Note 5)
Collector-Emitter Saturation Voltage (Note 5)
VCE(sat)
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
Output Capacitance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
RCE(sat)
VBE(sat)
VBE(on)
Cobo
fT
td
tr
ts
tf
Notes:
Max
⎯
⎯
⎯
-100
-50
-100
-100
Unit
V
V
V
nA
μA
nA
nA
⎯
⎯
450
⎯
V
-120
-180
-320
mV
320
-1.1
-1
⎯
⎯
⎯
⎯
⎯
⎯
mΩ
V
V
pF
MHz
ns
ns
ns
ns
Test Condition
IC = -100μA, IE = 0
IC = -10mA, IB = 0
IE = -100μA, IC = 0
VCB = -80V, IE = 0
VCB = -80V, IE = 0, TA = 150°C
VCE = -80V, VBE = 0
VEB = -4V, IC = 0
VCE = -5V, IC = -1mA
VCE = -5V, IC = -250mA
VCE = -5V, IC = -500mA
VCE = -5V, IC = -1A
IC = -250mA, IB = -25mA
IC = -500mA, IB = -50mA
IC = -1A, IB = -100mA
IC = -1A, IB = -100mA
IC = -1A, IB = -100mA
VCE = -5V, IC = -1A
VCB = -10V, f = 1.0MHz
VCE = -10V, IC = -50mA, f = 100MHz
VCC = -10V, IC = -1A,
IB1 = -IB2 = -50mA
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2.4
1,000
IB = 45mA
IB = 36mA
1.6
IB = 31.5mA
IB = 9mA
1.2
IB = 4.5mA
0.8
IB = 27mA
IB = 22.5mA
TA = 150°C
700
600
T A = 125°C
500
T A = 85°C
400
T A = 25°C
300
200
IB = 18mA
0.4
VCE = -10V
800
IB = 40.5mA
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (A)
900
2.0
IB = 13.5mA
T A = -55°C
100
0
0
0
1
2
3
4
5
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage
DSS9110Y
Document number: DS31678 Rev. 2 - 2
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1
10
100
1,000
10,000
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
October 2010
© Diodes Incorporated
DSS9110Y
1
1
IC/IB = 20
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
0.1
T A = 150°C
TA = 125°C
T A = 85°C
TA = 25°C
T A = 150°C
0.1
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
TA = -55°C
0.01
0.0001
0.01
0.0001
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
10
IC/IB = 50
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
10
1
T A = 150°C
TA = 125°C
0.1
T A = 85°C
TA = 25°C
TA = -55°C
1
0.1
IC/IB = 50
IC/IB = 20
IC/IB = 10
0.01
0.001
0.01
0.0001
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 9 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
VCE = -5V
1.0
0.8
TA = -55°C
0.6
T A = 25°C
0.4
TA = 85°C
TA = 125°C
0.2
T A = 150°C
0
0.0001
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 10 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
DSS9110Y
Document number: DS31678 Rev. 2 - 2
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 8 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
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1.4
1.2
IC/IB = 10
1.0
0.8
T A = -55°C
0.6
T A = 25°C
0.4
TA = 85°C
T A = 125°C
0.2
TA = 150°C
0
0.0001
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 11 Typical Base-Emitter Saturation Voltage
vs. Collector Current
October 2010
© Diodes Incorporated
DSS9110Y
Package Outline Dimensions
A
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Typ
F
0.40
0.45
H
1.80
2.20
J
0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.22
0°
8°
α
All Dimensions in mm
B C
H
K
M
J
D
F
L
Suggested Pad Layout
C2
Z
C2
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
C1
G
Y
X
DSS9110Y
Document number: DS31678 Rev. 2 - 2
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October 2010
© Diodes Incorporated
DSS9110Y
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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DSS9110Y
Document number: DS31678 Rev. 2 - 2
6 of 6
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October 2010
© Diodes Incorporated