“SUPER SOT” SOT23 PNP SILICON POWER DARLINGTON TRANSISTOR FMMT734 ISSUE 1 – AUGUST 1997 FEATURES * 625mW POWER DISSIPATION * Very High hFE at High Current (5A) * Extremely Low VCE(sat) at High Current (1A) E C COMPLEMENTARY TYPE – FMMT634 B PARTMARKING DETAIL – 734 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -100 V Collector-Emitter Voltage V CEO -100 V Emitter-Base Voltage V EBO -12 V Peak Pulse Current I CM -5 A Continuous Collector Current IC -800 mA Power Dissipation P tot 625 mW Operating and Storage Temperature Range T j:T stg -55 to +150 °C * Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FMMT734 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V (BR)CBO Breakdown Voltage -100 -130 V I C=-100µA Collector-Emitter V (BR)CEO Breakdown Voltage -100 -116 V I C=-5mA* Emitter-Base V (BR)EBO Breakdown Voltage -12 -17 V I E=-100µA Collector Cut-Off Current I CBO -10 nA V CB=-80V Emitter Cut-Off Current I EBO -10 nA V EB=-7V Collector Emitter Cut-Off Current I CES -200 nA V CES =-80V Collector-Emitter Saturation Voltage V CE(sat) -0.68 -0.72 -0.78 -0.86 -0.72 -0.90 -0.75 -0.80 -0.86 -0.97 — -1.05 V V V V V V I C=-100mA, I B=-1mA* I C=-250mA,I B=-1mA* I C=-500mA, I B=-5mA* I C=-800mA, I B=-5mA* I C=-800mA, I B=-5mA †* I C=-1A, I B=-5mA* Base-Emitter Saturation Voltage V BE(sat) -1.60 -1.75 V I C=-1A, I B=-5mA* Base-Emitter Turn-On Voltage V BE(on) -1.30 -1.75 V I C =-1A, V CE=-5V* Static Forward Current Transfer Ratio h FE Transition Frequency fT 20K 15K 5K I C=-10mA, V CE=-5V* I C=-100mA, V CE=-5V* I C=-1A, V CE=-5V* I C=-2A, V CE=-5V* I C=-5A, V CE=-5V* I C=-1A, V CE=-2V* 60K 60K 50K 15K 150 20K 140 MHz I C=-10mA, V CE=-10V f=100MHz pF V CB=-10V, f=1MHz I C=-500mA, V CC=-20V I B=±1mA Output Capacitance C obo 14 Turn-On Time t (on) 460 ns Turn-Off Time t (off) 1200 ns 25 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% † Tamb=150°C FMMT734 TYPICAL CHARACTERISTICS 1.2 VCE(sat) -(V) 1.6 +25°C 0.8 0.4 -55°C +25°C +100°C 0.8 0.4 0 0 1mA 150K 10mA 100mA 1A 10A 10mA 1mA 100mA IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC 2.0 VCE=5V +100°C 1A 10A 1A 10A IC/IB=500 1.6 100K VBE(sat) - (V) hFE - Typical Gain IC/IB=500 1.2 IC/IB=100 IC/IB=500 IC/IB=1000 IC/IB=5000 VCE(sat) -(V) 1.6 +25°C 50K 1.2 0.8 -55°C +25°C +100°C 0.4 -55°C 0 1mA 0 10mA 100mA 1A 1mA 10A IC-Collector Current hFE V IC 2.0 IC-Collector Current (A) VBE(on) - (V) 1.6 1.2 0.8 -55°C +25°C +100°C 0 1mA 100mA 10 VCE=5V 0.4 10mA IC-Collector Current VBE(sat) v IC 10mA 100mA IC-Collector Current VBE(on) v IC 1A 10A 1 0.1 0.01 0.001 0.1V DC 1s 100ms 10ms 1ms 100us 1V 10V VCE - Collector Emitter Voltage (V) Safe Operating Area 100V