CEL NE552R479A-T1A-A Necs 3.0 v, 0.25 w l&s-band medium power silicon ld-mosfet Datasheet

NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A
MEDIUM POWER SILICON LD-MOSFET
OUTLINE DIMENSIONS (Units in mm)
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
PACKAGE OUTLINE 79A
• HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V
(Bottom View)
A
Gate
1.2 MAX.
Drain
1.0 MAX.
Drain
4.4 MAX.
0.6±0.15
5.7 MAX.
Gate
Source
0.8±0.15
• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
1.5±0.2
Source
0X00 1
• SINGLE SUPPLY: 2.8 to 6 V
4.2 MAX.
W
• HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz
0.4±0.15
0.8 MAX.
5.7 MAX.
0.2±0.1
0.9±0.2
DESCRIPTION
3.6±0.2
APPLICATIONS
NEC's NE552R479A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the transmission
power amplifier for mobile and fixed wireless applications.
Die are manufactured using NEC's NEWMOS2 technology
(NEC's 0.6 μm WSi gate lateral MOSFET) and housed in a
surface mount package.
• DIGITAL CELLULAR PHONES:
3.0 V GSM1900 Pre Driver
• ANALOG CELLULAR PHONES:
2.4 V AMPS Handsets
• OTHERS:
W-LAN
Short Range Wireless
Retail Business Radio
Special Mobile Radio
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
NE552R479A
Electrical DC
Characteristics
Functional
Characteristics
PACKAGE OUTLINE
SYMBOLS
POUT
GL
ηADD
ID
CHARACTERISTICS
Output Power
79A
UNITS
MIN
TYP
dBm
24.0
26.0
Linear Gain
dB
Power Added Efficiency
%
MAX
f = 2.45 GHz, VDS = 3.0 V,
IDSQ = 200 mA (RF OFF)
Pin = 19 dBm, except
Pin = 10 dBm for linear gain
11.0
35
TEST CONDITIONS
45
Drain Current
A
IGSS
Gate-to-Source Leakage Current
nA
100
VGS = 5.0 V
IDSS
Saturated Drain Current
(Zero Gate Voltage Drain Voltage)
nA
100
VDS = 6.0 V
VTH
Gate Threshold Voltage
V
1.9
VDS = 3.5 V, IDS = 1 mA
gm
BVDSS
RTH
Transconductance
S
Drain-to-Source Breakdown Voltage
V
Thermal Resistance
°C/W
230
1
1.4
0.4
15
VDS = 3.5 V, IDS = 100 mA
18
IDSS = 10 μA
10
Channel-to-Case
Notes:
1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
California Eastern Laboratories
NE552R479A
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
RECOMMENDED OPERATING LIMITS
SYMBOLS
PARAMETERS
UNITS
TYP
MAX
VDS
Drain Supply Voltage
V
15.0
VDS
Drain to Source Voltage
V
3.0
6.0
VGS
Gate Supply Voltage
V
5.0
VGS
Gate Supply Voltage
V
2.0
3.0
IDS
Drain Current
mA
300
IDS
Drain Current1
mA
200
500
IDS
Drain Current (Pulse Test)
600
PIN
Input Power2
dBm
19
25
mA
2
PT
Total Power Dissipation
W
10
TCH
Channel Temperature
°C
125
TSTG
Storage Temperature
°C
-55 to +125
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty cycle 50%, Ton ≤ 1 s.
Notes:
1. Duty cycle 50%, Ton ≤ 1 s.
2. f = 2.45 GHz, VDS = 3.0 V.
LARGE SIGNAL IMPEDANCE
(VDS = 3.0 V, ID = 200 mA, f = 2.45 GHz, Pout = 400 mW)
Zin (Ω)
ZOL (Ω) 1
2.45
2.96 −j7.78
3.36 −j8.42
Note:
1. ZOL is the conjugate of optimum load impedance at given
voltage, idling current, input power and frequency.
ORDERING INFORMATION
PART NUMBER
FREQUENCY (GHz)
QTY
NE552R479A-T1A-A • 12 mm wide embossed taping.
• Gate pin faces the perforation side of
the tape.
• 5 kpcs/Reel
TYPICAL PERFORMANCE CURVES
(TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DRAIN CURRENT vs.
DRAIN VOLTAGE
1.0
20
Drain Current, ID (A)
Total Power Dissipation, PD (W)
25
15
RTH = 10°C/W
10
3.50
0.8
3.25
0.6
3.00
2.75
0.4
2.50
2.25
0.2
5
0
Gate Voltage (V) 3.75
2.20
1.75
0.0
0
25
50
75
100
125
Case Temperature, TC (°C)
150
0.00
2.0
4.0
6.0
Drain Voltage, VD (V)
8.0
10.0
NE552R479A
TYPICAL PERFORMANCE CURVES
(TA = 25°C)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
750
75
Pout
20
ηd
15
ηadd
10
500
50
250
25
Ids
15
20
ηadd
15
Ids
ηadd
Ids
10
25
3
2
750
75
50
500
25
250
20
IM3
-30
IM5
-40
-50
-60
0
-70
25
5
20
15
10
25
30
Average Two Tone Output Power, Pout (dBm)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
30
20
1000
100
750
75
500
50
250
25
ηd
ηadd
15
Ids
10
0
5
10
15
Input Power,Pin (dBm)
20
25
0
Output Power, Pout (dBm)
Pout
Drain Efficiency, ηd (%)
Power Added Efficiency, ηadd (%)
1250
25
5
0
4
Input Power,Pin (dBm)
Frequency = 2.0 GHz
Vds = 3.0 V
Idq = 150 mA
0
250
Frequency = 2.45 GHz
∆ Frequency = 1 MHz
Vds = 3.0 V
Idq = 200 mA
-20
IMD,(dBC)
100
0
15
Drain Efficiency, ηd (%)
Power Added Efficiency, ηadd (%)
Ids(mA)
1000
Ids(mA)
Output Power, Pout (dBm)
15
30
Output Power, Pout (dBm)
-10
ηd
5
50
IMD vs. TWO TONE OUTPUT POWER
Pout
20
0
500
Gate to Source Voltage, Vgs (V)
25
5
1
0
1250
10
75
0
5
25
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
Frequency = 2.45 GHz
Vds = 3.0 V
Idq = 200 mA
750
ηd
Input Power,Pin (dBm)
30
100
1250
Frequency = 2.0 GHz
Vds = 3.0 V
Pout
Pin = 19 dBm
25
20
ηd
1000
100
750
75
500
50
250
25
ηadd
15
Ids
10
5
0
1
2
3
Gate to Source Voltage, Vgs (V)
0
4
0
Drain Efficiency, ηd (%)
Power Added Efficiency, ηadd (%)
10
1000
Ids(mA)
5
0
20
10
0
0
5
Pout
25
Drain Efficiency, ηd (%)
Power Added Efficiency, ηadd (%)
100
Output Power, Pout (dBm)
1000
Drain Efficiency, ηd (%)
Power Added Efficiency, ηadd (%)
25
1250
Frequency = 2.45 GHz
Vds = 3.0 V
Pin = 19 dBm
Ids(mA)
30
1250
Frequency = 2.45 GHz
Vds = 3.0 V
Idq = 100 mA
Ids(mA)
Output Power, Pout (dBm)
30
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
NE552R479A
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
Note: This file and many other s-parameter files can be downloaded from www.cel.com
j50
j10
0
120˚
j100
j25
S22
S11
10
90˚
S21
60˚
150˚
30˚
S12
100
50
25
180˚
0
-j10
Coordinates in Ohms
Frequency in GHz
VD = 2.4 V, ID = 50 mA
-j100
-j25
0˚
-150˚
-30˚
-120˚
-90˚
-j50
-60˚
NE552R479A
VD = 2.4 V, ID = 50 mA
FREQUENCY
GHz
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
3.70
3.80
3.90
4.00
S11
MAG
0.877
0.806
0.775
0.764
0.760
0.765
0.771
0.781
0.792
0.805
0.816
0.829
0.838
0.848
0.855
0.861
0.866
0.872
0.877
0.883
0.889
0.895
0.901
0.905
0.909
0.909
0.911
0.910
0.912
0.912
0.915
0.916
0.919
0.920
0.922
0.923
0.924
0.924
0.925
0.925
S21
ANG
- 70.3
-108.8
-129.7
-142.5
-151.0
-157.3
-162.3
-166.4
-170.0
-173.2
-176.0
-178.7
178.6
176.4
174.2
172.2
170.3
168.5
166.8
165.2
163.8
162.3
161.1
159.8
158.8
157.8
157.0
156.3
155.7
155.1
154.8
154.2
153.8
153.4
153.1
153.0
153.0
153.1
153.5
154.1
Note:
1. Gain Calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG
13.863
9.339
6.708
5.130
4.102
3.378
2.846
2.437
2.113
1.854
1.644
1.458
1.304
1.172
1.057
0.958
0.871
0.795
0.729
0.671
0.619
0.572
0.531
0.493
0.459
0.427
0.399
0.373
0.350
0.329
0.311
0.294
0.278
0.263
0.251
0.239
0.228
0.217
0.208
0.200
S12
ANG
135.4
111.6
97.4
87.2
79.2
72.3
66.1
60.6
55.5
50.6
46.2
41.7
37.5
33.7
30.0
26.5
23.3
20.3
17.3
14.6
11.9
9.3
6.9
4.5
2.2
0.1
- 1.9
- 3.8
- 5.5
- 7.2
- 8.8
- 10.4
- 11.9
- 13.4
- 14.8
- 16.1
- 17.4
- 18.7
- 19.9
- 21.2
MAG
0.042
0.057
0.061
0.062
0.061
0.060
0.059
0.057
0.055
0.053
0.051
0.048
0.046
0.044
0.041
0.039
0.037
0.035
0.033
0.031
0.029
0.027
0.026
0.024
0.023
0.021
0.019
0.018
0.016
0.015
0.014
0.012
0.011
0.010
0.008
0.007
0.006
0.005
0.004
0.003
S22
ANG
46.6
23.4
9.6
0.6
- 7.0
- 13.0
- 18.2
- 23.0
- 27.3
- 31.4
- 34.8
- 38.5
- 41.8
- 44.9
- 47.6
- 50.3
- 52.4
- 54.4
- 56.7
- 58.7
- 60.2
- 62.1
- 63.8
- 65.6
- 67.3
- 68.8
- 71.4
- 74.0
- 74.2
- 74.8
- 75.5
- 77.4
- 77.8
- 79.9
- 80.8
- 78.5
- 75.4
- 73.6
- 70.4
- 50.4
MAG
0.452
0.569
0.614
0.641
0.663
0.681
0.699
0.717
0.734
0.751
0.770
0.781
0.793
0.806
0.818
0.830
0.841
0.851
0.861
0.870
0.878
0.885
0.892
0.898
0.903
0.909
0.914
0.919
0.924
0.927
0.932
0.935
0.939
0.943
0.948
0.951
0.953
0.957
0.960
0.961
ANG
-104.4
-132.8
-145.1
-151.6
-155.4
-158.2
-160.3
-161.9
-163.4
-164.8
-166.0
-167.7
-169.1
-170.4
-171.7
-173.1
-174.5
-175.9
-177.4
-178.8
179.7
178.2
176.8
175.2
173.8
172.3
170.8
169.1
167.5
166.0
164.4
162.9
161.3
159.6
157.9
156.1
154.1
152.1
149.6
146.8
K
MAG1
0.05
0.05
0.07
0.09
0.12
0.14
0.17
0.20
0.22
0.23
0.23
0.27
0.31
0.33
0.38
0.43
0.49
0.56
0.61
0.65
0.68
0.74
0.76
0.82
0.89
1.02
1.19
1.41
1.55
1.82
1.90
2.19
2.41
2.77
3.15
3.72
4.29
4.86
6.62
9.58
(dB)
25.15
22.13
20.43
19.17
18.24
17.49
16.85
16.32
15.86
15.46
15.11
14.80
14.53
14.29
14.07
13.89
13.72
13.61
13.49
13.39
13.29
13.22
13.14
13.07
13.05
12.11
10.52
9.38
8.93
8.26
8.13
7.63
7.39
7.11
6.98
6.76
6.58
6.47
6.36
5.98
NE552R479A
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
Note: This file and many other s-parameter files can be downloaded from www.cel.com
j50
j10
0
120˚
j100
j25
S22
S11
60˚
150˚
30˚
S12
10
25
100
50
-j50
NE552R479A
VD = 3.5 V, ID = 200 mA
FREQUENCY
S11
MAG
0.881
0.833
0.813
0.805
0.800
0.801
0.802
0.807
0.812
0.820
0.827
0.836
0.840
0.847
0.851
0.854
0.857
0.861
0.865
0.870
0.875
0.880
0.885
0.889
0.892
0.893
0.895
0.894
0.895
0.896
0.899
0.900
0.903
0.904
0.906
0.907
0.909
0.908
0.910
0.910
Coordinates in Ohms
Frequency in GHz
VD = 3.5 V, ID = 200 mA
-j100
-j25
180˚
0
-j10
GHz
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
3.70
3.80
3.90
4.00
90˚
S21
S21
ANG
- 80.4
-119.4
-139.1
-151.0
-158.9
-164.7
-169.3
-173.1
-176.3
-179.2
178.4
175.9
173.6
171.8
169.8
168.1
166.4
164.9
163.5
162.1
160.9
159.6
158.5
157.5
156.6
155.7
155.0
154.5
153.9
153.5
153.2
152.8
152.4
152.0
151.9
151.8
151.8
152.1
152.5
153.1
Note:
1. Gain Calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG
17.975
11.643
8.264
6.317
5.073
4.206
3.577
3.093
2.711
2.405
2.158
1.936
1.752
1.592
1.452
1.331
1.223
1.127
1.044
0.969
0.902
0.841
0.786
0.736
0.689
0.646
0.607
0.571
0.540
0.511
0.485
0.460
0.438
0.417
0.398
0.381
0.365
0.350
0.337
0.325
0˚
-150˚
-30˚
-120˚
S12
ANG
132.9
110.6
98.2
89.6
82.9
77.2
72.1
67.4
63.1
58.9
55.1
51.1
47.4
43.9
40.4
37.3
34.2
31.3
28.4
25.8
23.1
20.5
18.0
15.6
13.3
11.0
9.0
6.9
5.0
3.2
1.5
- 0.3
- 1.9
- 3.6
- 5.1
- 6.7
- 8.3
- 9.7
- 11.2
- 12.8
MAG
0.030
0.039
0.042
0.042
0.042
0.042
0.041
0.040
0.039
0.038
0.037
0.036
0.034
0.033
0.032
0.030
0.029
0.027
0.026
0.025
0.024
0.023
0.022
0.020
0.019
0.018
0.017
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.005
0.005
-90˚
S22
ANG
44.0
22.1
10.8
3.3
- 1.9
- 6.9
- 10.8
- 14.2
- 17.7
- 20.7
- 23.6
- 26.4
- 28.9
- 30.9
- 33.7
- 35.5
- 37.3
- 39.0
- 40.7
- 41.6
- 43.3
- 44.3
- 45.3
- 46.9
- 48.5
- 49.6
- 50.5
- 53.1
- 52.4
- 50.3
- 50.7
- 51.9
- 49.9
- 47.2
- 44.6
- 38.1
- 33.2
- 26.9
- 15.3
- 4.5
MAG
0.490
0.623
0.666
0.689
0.704
0.714
0.725
0.735
0.744
0.754
0.767
0.773
0.781
0.790
0.799
0.808
0.817
0.824
0.833
0.841
0.849
0.855
0.862
0.869
0.875
0.881
0.886
0.891
0.897
0.902
0.907
0.911
0.915
0.920
0.925
0.928
0.932
0.936
0.940
0.941
ANG
-134.7
-151.5
-159.4
-163.6
-166.2
-168.1
-169.4
-170.5
-171.5
-172.3
-173.0
-174.2
-175.1
-176.0
-176.9
-177.8
-178.8
-179.9
178.9
177.8
176.7
175.5
174.2
172.9
171.6
170.3
169.0
167.5
166.1
164.7
163.2
161.7
160.3
158.7
157.0
155.3
153.4
151.5
149.0
146.3
-60˚
K
MAG1
0.06
0.06
0.08
0.11
0.14
0.17
0.21
0.24
0.26
0.28
0.29
0.32
0.37
0.41
0.45
0.51
0.58
0.66
0.69
0.76
0.81
0.85
0.88
0.96
1.03
1.17
1.32
1.61
1.81
2.08
2.11
2.44
2.77
3.09
3.35
3.93
4.17
4.98
4.88
4.94
(dB)
27.71
24.72
22.98
21.78
20.83
20.04
19.42
18.89
18.42
18.03
17.66
17.37
17.06
16.86
16.63
16.44
16.28
16.15
15.97
15.91
15.82
15.69
15.62
15.60
14.40
13.05
12.20
11.19
10.71
10.17
10.09
9.58
9.33
9.09
8.98
8.65
8.53
8.21
8.20
7.84
NE552R479A
APPLICATION CIRCUIT (2.40-2.48 GHz)
P.C.B. LAYOUT (Units in mm)
79A PACKAGE
+VG
+VD
J3
4.0
J4
C3
C9
C11
1.7
C2
C8
C10
P1
GND
1.0
Gate
0.5
5.9
C12
1.2
Drain
C13
R1
C14
C5
C1
U1
J2
C4
C6
RF IN
OU
C7
A W
IN
0X001
J1
Source
RF OUT
Through hole φ 0.2 × 33
0.5
er=4.2
6.1
TAB
Note:
Use rosin or other material to prevent solder from penetrating
through-holes.
500855B
t=0.028
0.5
J4
J3
+Vd
+Vg
C13
C11
C9
C2
C3
C8
C12
C10
R1
C1
J1
C5
RF OUTPUT
RF INPUT
NE552R479A
C6
C14
C4
C7
NE552R479A PARTS LIST
1
1
4
2
1
2
2
1
2
2
2
1
1
1
2
1
J2
600S3R3CW
TF-100637
C14
MCH185A101JK
MCR03J200
600S2R7BW
600S5R6CW
600S1R5CW
TAJB475K010R
MCH215F104ZP
0805CG102J9BB04
NE552R479A
703401
1250-003
2052-5636-02
FD-500855B
C2,C3
R1
C4,C7
C1,C5
C6
C12, C13
C10, C11
C8, C9
U1
P1
J3, J4
J1, J2
PCB
0603 3.3 pF CAP ATC
TEST CIRCUIT BLK
2-56 x 3/16 PHILLIPS PAN HEAD
0603 100pF CAP ROHM
0603 20 OHM RESISTOR ROHM
0603 2.7pF CAP ATC
0603 5.6pF CAP ATC
0805 1.5pF CAP ATC
CASE B 4.7 uF CAP AVX
0805 .1uF CAP ROHM
0805 1000 pF CAP PHIL6
IC NEC
GROUND LUG CONCORD
FEEDTHRU MURATA
FLANGE MOUNT JACK RECEPTACLE
S-BAND MODULE FABRICATION DRAWING
17
15
14
13
12
11
10
9
8
7
5
4
3
2
1
NE552R479A
TYPICAL APPLICATION CIRCUIT PERFORMANCE
(TA = 25°C)
OUTPUT POWER vs.
INPUT POWER
-10
f = 2.44 GHz
32
-20
30
-25
28
26
24
3.6 V, 100mA
3.6 V, 300mA
5 V, 100mA
5 V, 300mA
8 V, 100mA
8 V, 300mA
22
20
18
f = 2.44 GHz
-15
IM3 (dBc)
Output Power, POUT (dBm)
34
IM3 vs.
OUTPUT POWER
8
10
12
14
16
18
20
Input Power, PIN (dBm)
22
24
-30
-35
-40
3.6 V, 100mA
3.6 V, 300mA
5 V, 100mA
5 V, 300mA
8 V, 100mA
8 V, 300mA
-45
-50
-55
-60
6
8 10
12 14 16 18 20 22 24 26
Output Power, POUT (dBm), Each Tone
NE552R479A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods
and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature)
Time at temperature of 200°C or higher
Preheating time at 120 to 150°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 215°C or below
: 25 to 40 seconds
: 30 to 60 seconds
: 3 times
: 0.2%(Wt.) or below
VP215
Wave Soldering
Peak temperature (molten solder temperature)
Time at peak temperature
Preheating temperature (package surface temperature)
Maximum number of flow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 120°C or below
: 1 time
: 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature)
Soldering time (per pin of device)
Maximum chlorine content of rosin flux (% mass)
: 350°C or below
: 3 seconds or less
: 0.2%(Wt.) or below
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
08/11/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
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