Si6426DQ N-Channel 2.5-V (G-S) Rated MOSFET Product Summary VDS (V) 20 rDS(on) () ID (A) 0.035 @ VGS = 4.5 V 5.4 0.04 @ VGS = 2.5 V 4.9 D TSSOP-8 D S S G 1 2 8 7 Si6426DQ 3 6 4 5 D S S D G *Source Pins 2, 3, 6, and 7 must be tied common. Top View S* N-Channel MOSFET Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150C) 150 C)a TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25C Maximum Power Dissipationa TA = 70C Operating Junction and Storage Temperature Range ID Unit V 5.4 4.2 IDM 30 IS 1.25 A 1.5 PD 1.0 W TJ, Tstg –55 to 150 C RthJA 83 C/W Thermal Resistance Ratings Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70174. A SPICE Model data sheet is available for this product (FaxBack document #70545). Siliconix S-49534—Rev. A, 06-Oct-97 1 Si6426DQ Specifications (TJ = 25C Unless Otherwise Noted) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.6 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On State Drain Currenta On-State ID(on) D( ) Drain Source On-State Drain-Source On State Resistancea rDS(on) Forward Transconductance a Diode Forward Voltagea V VDS = 0 V, VGS = "8 V "100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55C 5 VDS w 5 V, VGS = 4.5 V "20 VDS w 5 V, VGS = 2.5 V "8 nA mA A VGS = 4.5 V, ID = 5.4 A 0.025 0.035 VGS = 2.5 V, ID = 4.9 A 0.030 0.04 gfs VDS = 10 V, ID = 5.4 A 22 VSD IS = 1.25 A, VGS = 0 V 0.7 1.2 18 35 W S V Dynamicb Total Gate Charge Qg VDS = 6 V, VGS = 4.5 V, ID = 5.4 A nC Gate-Source Charge Qgs Gate-Drain Charge Qgd 4 Turn-On Delay Time td(on) 35 60 65 100 100 150 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W IF = 1.25 A, di/dt = 100 A/ms 2.5 33 60 50 100 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. 2 Siliconix S-49534—Rev. A, 06-Oct-97 Si6426DQ Typical Characteristics (25C Unless Otherwise Noted) Output Characteristics Transfer Characteristics 40 25 VGS = 5 thru 3 V 2.5 V 20 I D – Drain Current (A) I D – Drain Current (A) 32 24 2V 16 8 15 10 25C 5 TC = 125C 1.5 V –55C 1, 0.5 V 0 0 1 2 3 4 0 5 0 VDS – Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 2.5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 2800 0.05 C – Capacitance (pF) rDS(on) – On-Resistance ( ) 2400 0.04 VGS = 2.5 V 0.03 VGS = 4.5 V 0.02 2000 1600 Coss 1200 800 Ciss 0.01 Crss 400 0 0 0 6 12 18 24 30 36 0 Gate Charge 6 4 2 0 6 12 16 20 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.4 A rDS(on) – On-Resistance ( ) (Normalized) VGS – Gate-to-Source Voltage (V) 2.0 VDS = 6 V ID = 5.4 A 0 8 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 8 4 12 18 24 Qg – Total Gate Charge (nC) Siliconix S-49534—Rev. A, 06-Oct-97 30 1.5 1.0 0.5 0 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) 3 Si6426DQ Typical Characteristics (25C Unless Otherwise Noted) Source-Drain Diode Forward Voltage rDS(on) – On-Resistance ( W ) I S – Source Current (A) On-Resistance vs. Gate-to-Source Voltage 0.30 40 TJ = 150C 10 TJ = 25C 0.24 0.18 0.12 ID = 5.4 A 0.06 0 1 0.5 0.7 0.9 1.1 0 1.3 VSD – Source-to-Drain Voltage (V) 3 4 5 Single Pulse Power 50 0.1 40 ID = 250 mA –0.0 Power (W) VGS(th) Variance (V) 2 VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.2 1 –0.1 30 20 –0.2 10 –0.3 –0.4 –50 0 –25 0 25 50 75 100 125 150 0.001 0.01 1 0.1 TJ – Temperature (C) 10 100 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 83C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 4. Surface Mounted 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) 4 Siliconix S-49534—Rev. A, 06-Oct-97