Diodes DCX114YK Dual complementary pre-biased transistor Datasheet

DCX (xxxx) K
DUAL COMPLEMENTARY PRE-BIASED TRANSISTOR
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Features
•
•
•
•
Mechanical Data
Epitaxial Planar Die Construction
Built-In Biasing Resistors
Available in Lead Free/RoHS Compliant Version (Note 1)
“Green” Device (Note 2)
Part Number
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
R1
22KΩ
47KΩ
10KΩ
2.2KΩ
10KΩ
100KΩ
4.7KΩ
10KΩ
R2
22KΩ
47KΩ
47KΩ
47KΩ
10KΩ
100KΩ
-
Marking
C17
C20
C14
C06
C13
C15
C07
C12
C1
B2
•
•
Case: SC-74R (Note 3)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Matte Tin Finish annealed over Copper leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Table and Page 11
Ordering Information: See Page 11
Weight: 0.015 grams (approximate)
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•
•
•
•
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E2
C1
R1 R
2
B1
R1
C2
R1, R2 Device Schematic
Maximum Ratings NPN Section
E2
R1
R2 R1
E1
B2
E1
B1
C2
R1 only Device Schematic
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VCC
Supply Voltage
Input Voltage
Output Current
Output Current
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
All
Unit
V
IC(MAX)
Value
50
-10 to +40
-10 to +40
-6 to +40
-5 to +12
-10 to +40
-10 to +40
-5V max
-5V max
30
30
70
100
50
20
100
100
100
Symbol
PD
RθJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
VIN
IO
V
mA
mA
Thermal Characteristics NPN Section
Characteristic
Power Dissipation (Total) (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. SC-74R and SOT-26 have identical dimensions and the only difference is the location of the pin one indicator. Please see the individual device
datasheets for exact details regarding the location of the pin one indicator.
4. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be
exceeded.
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
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DCX (xxxx) K
Maximum Ratings PNP Section
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VCC
Supply Voltage
Input Voltage
Output Current
Output Current
Unit
V
IC(MAX)
Value
50
+10 to –40
+10 to –40
+6 to –40
+5 to –12
+10 to –40
+10 to –40
+5V max
+5V max
-30
-30
-70
-100
-50
-20
-100
-100
-100
Symbol
PD
RθJA
TJ, TSTG
Value
300
833
-55 to +150
Unit
mW
°C/W
°C
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
All
VIN
IO
V
mA
mA
Thermal Characteristics PNP Section
Characteristic
Power Dissipation (Total)
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
(Note 4)
(Note 4)
Electrical Characteristics NPN Section
@TA = 25°C unless otherwise specified
Characteristic (DDC143TK & DDC114TK only)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
Min
50
50
5
⎯
⎯
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
hFE
ΔR1
fT
100
-30
⎯
DC Current Transfer Ratio
Input Resistor (R1) Tolerance
Gain-Bandwidth Product*
Typ Max Unit
Test Condition
V IC = 50μA
⎯
⎯
V IC = 1mA
⎯
⎯
V IE = 50μA
⎯
−−
⎯ 0.5 μA VCB = 50V
⎯ 0.5 μA VEB = 4V
I /I = 2.5mA / 0.25mA – DCX143TK
V C B
⎯ 0.3
IC/IB = 1mA / 0.1mA – DCX114TK
250 600 ⎯ IC = 1mA, VCE = 5V
⎯ +30 %
⎯
250 ⎯ MHz VCE = 10V, IE = -5mA, f = 100MHz
* Transistor - For Reference Only
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
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DCX (xxxx) K
Electrical Characteristics NPN Section (continued)
Input Voltage
Characteristic
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
Output Voltage
Input Current
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
Output Current
DC Current Gain
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
Input Resistor (R1) Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product*
Symbol
Vl(OFF)
Min
0.5
0.5
0.3
0.5
0.5
0.5
Vl(ON)
⎯
VO(ON)
⎯
Il
⎯
IO(OFF)
⎯
80
68
68
80
30
82
-30
-20
⎯
Gl
ΔR1
R2/R1
fT
@TA = 25°C unless otherwise specified
Typ Max Unit
Test Condition
1.1
1.1
⎯
V VCC = 5V, IO = 100μA
⎯
⎯
1.1
1.1
VO = 0.3V, IO = 5mA
1.65 3.0
VO = 0.3V, IO = 2mA
1.9 3.0
VO = 0.3V, IO = 1mA
⎯ 1.4
V
⎯ 1.1
VO = 0.3V, IO = 5mA
1.9 3.0
VO = 0.3V, IO = 10mA
1.9 3.0
VO = 0.3V, IO = 1mA
IO/Il = 10mA / 0.5mA
IO/Il = 10mA / 0.5mA
I /I = 5mA / 0.25mA
0.1 0.3
V O l
IO/Il = 5mA / 0.25mA
IO/Il = 10mA / 0.5mA
IO/Il = 5mA / 0.25mA
0.36
0.18
0.88
mA VI = 5V
⎯
3.6
0.88
0.15
⎯ 0.5 μA VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
VO = 5V, IO = 5mA
VO = 5V, IO = 10mA
⎯
⎯
⎯
VO = 5V, IO = 10mA
VO = 5V, IO = 5mA
VO = 5V, IO = 5mA
⎯ +30 %
⎯
⎯ +20 %
⎯
250 ⎯ MHz VCE = 10V, IE = -5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics PNP Section
@TA = 25°C unless otherwise specified
Characteristic (DCX143TK & DCX114TK only)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol Min
BVCBO -50
BVCEO -50
-5
BVEBO
ICBO
⎯
IEBO
⎯
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
hFE
ΔR1
fT
100
-30
⎯
DC Current Transfer Ratio
Input Resistor (R1) Tolerance
Gain-Bandwidth Product*
Typ Max Unit
Test Condition
V IC = -50μA
⎯
⎯
V IC = -1mA
⎯
⎯
V IE = -50μA
⎯
⎯
⎯ -0.5 μA VCB = -50V
⎯ -0.5 μA VEB = -4V
I /I = -2.5mA / -0.25mA - DCX143TK
V C B
⎯ -0.3
IC/IB = -1mA / -0.1mA - DCX114TK
250 600 ⎯ IC = -1mA, VCE = -5V
⎯ +30 %
⎯
250 ⎯ MHz VCE = -10V, IE = 5mA, f = 100MHz
* Transistor - For Reference Only
DCX (xxxx) K
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DCX (xxxx) K
Electrical Characteristics PNP Section (Continued)
Characteristic
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
Input Voltage
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
Output Voltage
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
Input Current
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
Output Current
DC Current Gain
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
Input Resistor (R1) Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product*
@TA = 25°C unless otherwise specified
Symbol Min Typ Max Unit
Test Condition
-0.5 -1.1
-0.5 -1.1
-0.3 ⎯
V VCC = -5V, IO = -100μA
⎯
Vl(OFF)
-0.5 ⎯
-0.5 −1.1
-0.5 −1.1
VO = -0.3V, IO = -5mA
-1.9 -3.0
VO = -0.3V, IO = -2mA
-1.9 -3.0
VO = -0.3V, IO = -1mA
⎯ -1.4
V
Vl(ON)
⎯
⎯ -1.1
VO = -0.3V, IO = -5mA
-1.9 -3.0
VO = -0.3V, IO = -10mA
-1.9 -3.0
VO = -0.3V, IO = -1mA
IO/Il = -10mA /-0.5mA
IO/Il = -10mA /-0.5mA
I /I = -5mA /-0.25mA
V O l
VO(ON)
⎯ -0.1 -0.3
IO/Il = -5mA /-0.25mA
IO/Il = -10mA/-0.5mA
IO/Il = -5mA/-0.25mA
-0.36
-0.18
-0.88
mA VI = -5V
⎯
⎯
Il
-3.6
-0.88
-0.15
IO(OFF)
⎯
⎯ -0.5 μA VCC = 50V, VI = 0V
VO = -5V, IO = -5mA
80
VO = -5V, IO = -5mA
68
VO = -5V, IO = -10mA
68
Gl
⎯
⎯
⎯
80
VO = -5V, IO = -10mA
30
VO = -5V, IO = -5mA
82
VO = -5V, IO = -5mA
-30
ΔR1
⎯ +30 %
⎯
-20
R2/R1
⎯ +20 %
⎯
fT
⎯ 250 ⎯ MHz VCE = -10V, IE = -5mA, f = 100MHz
*Transistor - For Reference Only
PD, POWER DISSIPATION (mW)
Typical Curves – Total Device
TA , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
DCX (xxxx) K
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DCX (xxxx) K
Typical Curves – DCX124EK
PNP Section
350
TA = 150° C
IC, COLLECTOR CURRENT (A)
VCE = -5V
T A = 125°C
300
Ib = 0.9mA
Ib = 0.8mA
TA = 85° C
250
Ib = 0.7mA
200
Ib = 0.6mA
Ib = 0.3mA
Ib = 0.5mA
Ib = 0.4mA
Ib = 0.2mA
T A = 25°C
150
100
Ib = 0.1mA
50
0
0.1
IC/IB = 10
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
TA = 125° C
1
10
100
1,000
VCE = -5V
TA = 150° C
T A = 85°C
TA = -55° C
T A = 25°C
T A = 25°C
T A = -55°C
TA = 85°C
TA = 125° C
T A = 150 °C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
IC/IB = 10
VCE = -0.3V
TA = -55°C
TA = 25° C
TA = 85° C
TA = 125° C
TA = 25°C
TA = -55° C
TA = 85° C
TA = 150° C
TA = 150° C
Fig. 7 VI(ON) vs. IC
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
TA = 125° C
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Typical Curves – DCX124EK
NPN Section
VCE = 5V
IC, COLLECTOR CURRENT (A)
T A = 150 °C
hFE, DC CURRENT GAIN
T A = 125 °C
T A = 150°C
T A = -55°C
TA = 25°C
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
T A = 125°C
TA = 85° C
T A = -55°C
VCE = 5V
T A = -55°C
TA = 25° C
TA = 125° C
TA = 85°C
TA = 150° C
IC, COLLECTOR CURRENT (mA)
Fig. 11 Base-Emitter Turn-On Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (mA)
Fig. 10 Collector-Emitter Saturation Voltage
vs. Collector Current
VCE = 0.3V
TA = -55°C
TA = 25° C
T A = 85°C
TA = 125° C
TA = 150° C
VI(ON), INPUT VOLTAGE (V)
IC/IB = 10
VBE(SAT), BASE-EMITTER
SATURATION VOLTAGE (V)
TA = 25°C
IC, COLLECTOR CURRENT (mA)
Fig. 9 Typical DC Current Gain vs. Collector Current
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 8 Typical Collector Current
vs. Collector-Emitter Voltage
IC/IB = 10
T A = 85°C
TA = -55°C
TA = 125° C
T A = 85°C
T A = 25°C
TA = 150° C
IC, COLLECTOR CURRENT (mA)
Fig. 12 Typical Base-Emitter Saturation Voltage
vs. Collector Current
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
IC, OUTPUT CURRENT (mA)
Fig. 13 VI(ON) vs. IC
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Typical Curves – DCX123JK PNP Section
1,000
1
IC/IB = 10
VCE(SAT), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 10
100
10
0.1
TA = 75°C
T A = -25°C
TA = 25°C
0.01
0.001
0
40
10
20
30
50
IC, COLLECTOR CURRENT (mA)
Fig. 15 Typical Collector Emitter Saturation Voltage
vs. Collector Current
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 14 Typical DC Current Gain vs. Collector Current
100
IC, COLLECTOR CURRENT (mA)
CAPACITANCE (pF)
IE = 0mA
Cobo
10
1
0.1
0.01
0.001
0
VR, REVERSE VOLTAGE (V)
Fig. 16 Typical Capacitance Characteristics
5
6
3
4
8
9
7
Vin, INPUT VOLTAGE (V)
Fig. 17 Collector Current vs. Input Voltage
1
2
10
10
Vin, INPUT VOLTAGE (V)
VO = 0.2
TA = -25°C
1
TA = 75°C
TA = 25°C
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Fig. 18 Input Voltage vs. Collector Current
DCX (xxxx) K
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Typical Curves – DCX123JK
NPN Section
1,000
1
VCE = 10
hFE, DC CURRENT GAIN
VCE(SAT), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
100
10
0.1
TA = -25°C
T A = 25°C
0.01
0.001
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 19 Typical DC Current Gain vs. Collector Current
TA = 75° C
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Fig. 20 Collector Emitter Saturation Voltage
vs. Collector Current
50
100
IC, COLLECTOR CURRENT (mA)
IE = 0mA
Cobo
10
1
0.1
0.01
0.001
0
VR, REVERSE VOLTAGE (V)
Fig. 21 Typical Capacitance Characteristics
6
7
8
9
5
3
4
Vin, INPUT VOLTAGE (V)
Fig. 22 Collector Current vs. Input Voltage
1
2
10
10
Vin, INPUT VOLTAGE (V)
VO = 0.2
TA = -25°C
1
0.1
0
50
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Fig. 23 Input Voltage vs. Collector Current
DCX (xxxx) K
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DCX (xxxx) K
Typical Curves – DCX114TK
PNP Section
1,000
1
VCE(SAT), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
IC/IB = 10
100
10
T A = 75°C
0.1
TA = -25° C
TA = 25° C
0.01
0.001
0
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 24 Typical DC Current Gain vs. Collector Current
40
10
20
30
50
IC, COLLECTOR CURRENT (mA)
Fig. 25 Typical Collector Emitter Saturation Voltage
vs. Collector Current
100
IE = 0mA
TA = 75°C
CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
TA = 25°C
Cobo
10
TA = -25°C
1
0.1
0.01
0.001
0
VR, REVERSE VOLTAGE (V)
Fig. 26 Typical Capacitance Characteristics
8
9 10
6
7
3
4
5
Vin, INPUT VOLTAGE (V)
Fig. 27 Collector Current vs. Input Voltage
1
2
10
Vin, INPUT VOLTAGE (V)
VO = 0.2
1
T A = 25°C
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Fig. 28 Input Voltage vs. Collector Current
DCX (xxxx) K
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Typical Curves- DCX114TK NPN Section
1,000
1
VCE = 10
IC/IB = 10
VCE(SAT), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
TA = 75°C
hFE, DC CURRENT GAIN
TA = -25°C
TA = 25°C
100
10
1
1
0.1
TA = 75° C
TA = -25°C
T A = 25°C
0.01
0.001
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 29 Typical DC Current Gain vs. Collector Current
10
40
20
30
50
IC, COLLECTOR CURRENT (mA)
Fig. 30 Typical Collector Emitter Saturation Voltage
vs. Collector Current
0
100
4
IC, COLLECTOR CURRENT (mA)
IE = 0mA
CAPACITANCE (pF)
3
2
Cobo
1
0
5
0
10
15
20
25
30
10
1
0.1
0.01
0.001
0
Fig. 31 Typical Capacitance Characteristics
8
9 10
6
7
3 4
5
Vin, INPUT VOLTAGE (V)
Fig. 32 Collector Current vs. Input Voltage
1
2
10
Vin, INPUT VOLTAGE (V)
VO= 0.2
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Fig. 33 Input Voltage vs. Collector Current
DCX (xxxx) K
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DCX (xxxx) K
Ordering Information
(Notes 5 & 6)
Part Number
DCX124EK-7
DCX144EK-7
DCX114YK-7
DCX123JK-7
DCX114EK-7
DCX115EK-7
DCX143TK-7
DCX114TK-7
Notes:
Case
SC-74R
SC-74R
SC-74R
SC-74R
SC-74R
SC-74R
SC-74R
SC-74R
Packaging
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
6. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: DCX114TK-7-F.
Marking Information
YM
Cxx
Date Code Key
Year
Code
Month
Code
2006
T
2007
U
Jan
1
2008
V
Feb
2
Cxx = Product Type Marking Code (See Page 1)
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Mar
3
2009
W
Apr
4
May
5
2010
X
Jun
6
2011
Y
Jul
7
2013
A
2012
Z
Aug
8
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
Package Outline Dimensions
A
B C
H
K
M
J
L
D
SC-74R
Dim Min Max Typ
A
0.35 0.50 0.38
B
1.50 1.70 1.60
C
2.70 3.00 2.80
D
⎯
⎯ 0.95
H
2.90 3.10 3.00
J
0.013 0.10 0.05
K
1.00 1.30 1.10
L
0.35 0.55 0.40
M
0.10 0.20 0.15
0°
8°
α
⎯
All Dimensions in mm
Suggested Pad Layout
E
Z
E
C
G
Dimensions Value (in mm)
Z
3.20
G
1.60
X
0.55
Y
0.80
C
2.40
E
0.95
Y
X
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
11 of 12
www.diodes.com
October 2008
© Diodes Incorporated
DCX (xxxx) K
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
12 of 12
www.diodes.com
October 2008
© Diodes Incorporated
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