DATA SHEET MUN211 Series SEMICONDUCTOR Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network H SOT–23 (TO–236AB) 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. 1 2 PIN 1 R1 BASE (INPUT) R2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 246 (Note 1.) 400 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) mW Rating Collector Current THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C °C/W Thermal Resistance – Junction-to-Ambient RθJA 508 (Note 1.) 311 (Note 2.) °C/W Thermal Resistance – Junction-to-Lead RθJL 174 (Note 1.) 208 (Note 2.) °C/W Junction and Storage Temperature Range TJ, Tstg –55 to +150 °C 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad http://www.yeashin.com 1 REV.02 20120403 MUN211 Series DEVICE MARKING AND RESISTOR VALUES R2 (K) Shipping 47 8 3000/Tape & Reel A6A 10 10 3000/Tape & Reel SOT-23 A6B 22 22 3000/Tape & Reel MUN2113 SOT-23 A6C 47 47 3000/Tape & Reel MUN2114 SOT-23 A6D 10 47 3000/Tape & Reel MUN2115 SOT-23 A6E 10 8 3000/Tape & Reel MUN2116 SOT-23 A6F 4.7 8 Device Package Marking R1 (K) MUN2110 SOT-23 A6O MUN2111 SOT-23 MUN2112 3000/Tape & Reel MUN2130 SOT-23 A6G 1.0 1.0 3000/Tape & Reel MUN2131 SOT-23 A6H 2.2 2.2 3000/Tape & Reel MUN2132 SOT-23 A6J 4.7 4.7 3000/Tape & Reel MUN2133 SOT-23 A6K 4.7 47 3000/Tape & Reel MUN2134 SOT-23 A6L 22 47 3000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc IEBO – – – – – – – – – – – – – – – – – – – – – – – – 0.1 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 mAdc Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc Emitter-Base Cutoff Current (V EB = 6.0 V, IC = 0) MUN2110 MUN2111 MUN2112 MUN2113 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132 MUN2133 MUN2134 3. New devices. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% http://www.yeashin.com 2 REV.02 20120403 MUN211 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max hFE 80 35 60 80 80 160 160 3.0 8.0 15 80 80 140 60 100 140 140 250 250 5.0 15 27 140 130 – – – – – – – – – – – – VCE(sat) - - 0.25 – – – – – – – – – – – – - – – – – – – – – – – – – - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 - - 32.9 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 47 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 61.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 0.8 0.17 0.8 0.055 1.0 0.21 1.0 0.1 1.2 0.25 1.2 0.185 Unit ON CHARACTERISTICS (Note 5.) DC Current Gain (V CE = 10 V, IC = 5.0 mA ) MUN2110 MUN2111 MUN2112 MUN2113 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132 MUN2133 MUN2134 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) MUN2130/MUN2131 (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) MUN2115/MUN2116/ MUN2132/MUN2133/MUN2134 Output Voltage (on) (V CC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) (V CC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ ) VOL MUN2110 MUN2114 MUN2111 MUN2112 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132 MUN2133 MUN2134 MUN2113 Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ ) (VCC VOH Vdc Vdc Vdc MUN2115 MUN2116 MUN2131 MUN2132 = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ ) MUN2130 Input Resistor R1 MUN2110 MUN2111 MUN2112 MUN2113 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132 MUN2133 MUN2134 Resistor RatioMUN2111/MUN2112/MUN2113 MUN2114 MUN2115/MUN2116/MUN2110 MUN2130/MUN2131/MUN2132 MUN2133 R1/R2 kΩ 5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% http://www.yeashin.com 3 REV.02 20120403 DEVICE CHARACTERISTICS PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 RθJA = 625°C/W 50 0 -50 0 50 100 150 VCE(sat) , MAXIMIM COLLECTOR VOLTAGE (VOLTS) MUN211 Series 1 IC/IBĂ=Ă10 TAĂ=Ă-25°C 75°C ā0.1 ā0.01 20 0 Figure 1. Derating Curve Cob , CAPACITANCE (pF) h FE, DC CIRRENT GAIN (NORMALIZED) TAĂ=Ă75°C 25°C -25°C 100 10 IC, COLLECTOR CIRRENT (mA) 3 2 1 0 100 f = 1 MHz lE = 0 V TA = 25°C 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 3. DC Current Gain VO = 0.2 V Vin, INPIT VOLTAGE (VOLTS) IC , COLLECTOR CIRRENT (mA) 100 TAĂ=Ă-25°C 10 1 ā0.1 ā0.01 ā0.001 VO = 5 V 0 1 ā2 ā6 ā7 ā3 ā4 ā5 Vin, INPIT VOLTAGE (VOLTS) ā8 ā9 10 Figure 5. Output Current versus Input Voltage http://www.yeashin.com 50 Figure 4. Output Capacitance 25°C 75°C ā80 4 VCE = 10 V 100 ā60 Figure 2. VCE(sat) versus IC 1000 1 ā40 IC, COLLECTOR CIRRENT (mA) TA, AMBIENT TEMPERATIRE ( °C) 10 25°C TAĂ=Ă-25°C 10 25°C 75°C 1 ā0.1 0 10 ā20 ā30 IC, COLLECTOR CIRRENT (mA) ā40 Figure 6. Input Voltage versus Output Current 4 REV.02 20120403 ā50 DEVICE CHARACTERISTICS 1000 10 IC/IBĂ=Ă10 h FE , DC CIRRENT GAIN (NORMALIZED) VCE(sat) , MAXIMIM COLLECTOR VOLTAGE (VOLTS) MUN211 Series TAĂ=Ă-25°C 25°C 1 75°C ā0.1 ā0.01 0 ā20 ā40 ā60 IC, COLLECTOR CIRRENT (mA) VCE = 10 V TAĂ=Ă75°C 100 10 ā80 10 1 Figure 8. DC Current Gain 100 f = 1 MHz lE = 0 V TA = 25°C IC , COLLECTOR CIRRENT (mA) Cob , CAPACITANCE (pF) 4 2 1 0 0 100 IC, COLLECTOR CIRRENT (mA) Figure 7. VCE(sat) versus IC 3 25°C -25°C 25°C TAĂ=Ă-25°C 10 1 ā0.1 VO = 5 V ā0.01 ā0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 0 1 ā2 ā3 ā4 ā5 ā6 ā7 ā8 ā9 Vin, INPIT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 Vin, INPIT VOLTAGE (VOLTS) VO = 0.2 V TAĂ=Ă-25°C 25°C 10 75°C 1 ā0.1 0 10 ā20 ā30 ā40 ā50 IC, COLLECTOR CIRRENT (mA) Figure 11. Input Voltage versus Output Current http://www.yeashin.com 5 REV.02 20120403 10 DEVICE CHARACTERISTICS 1 1000 IC/IBĂ=Ă10 TAĂ=Ă-25°C 25°C 75°C ā0.1 ā0.01 h FE , CIRRENT GAIN (NORMALIZED) VCE(sat) , MAXIMIM COLLECTOR VOLTAGE (VOLTS) MUN211 Series 0 10 20 30 IC, COLLECTOR CIRRENT (mA) TAĂ=Ă75°C 25°C -25°C 100 10 40 1 10 IC, COLLECTOR CIRRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 Cob , CAPACITANCE (pF) I C , COLLECTOR CIRRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 0.8 0.6 0.4 0.2 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 TAĂ=Ă75°C 25°C -25°C 10 1 ā0.1 ā0.01 ā0.001 VO = 5 V 1 0 ā2 ā3 ā4 ā5 ā6 ā7 ā8 VO = 2 V TAĂ=Ă-25°C 25°C 75°C 10 1 0 10 ā20 30 IC, COLLECTOR CIRRENT (mA) ā40 ā50 Figure 16. Input Voltage versus Output Current http://www.yeashin.com 10 Figure 15. Output Current versus Input Voltage 100 Ă0.1 Ă9 Vin, INPIT VOLTAGE (VOLTS) Figure 14. Output Capacitance Vin , INPIT VOLTAGE (VOLTS) 100 6 REV.02 20120403 DEVICE CHARACTERISTICS 180 1 IC/IBĂ=Ă10 TAĂ=Ă-25°C hFE, DC CIRRENT GAIN (NORMALIZED) VCE(sat) , MAXIMIM COLLECTOR VOLTAGE (VOLTS) MUN211 Series 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CIRRENT (mA) TAĂ=Ă75°C VCE = 10 V 160 25°C 140 -25°C 120 100 80 60 40 20 0 80 1 2 4 6 Figure 17. VCE(sat) versus IC TAĂ=Ă75°C f = 1 MHz lE = 0 V TA = 25°C 3.5 3 IC, COLLECTOR CIRRENT (mA) Cob , CAPACITANCE (pF) 90 100 100 4 2.5 2 1.5 1 0.5 0 2 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 4 45 50 Figure 19. Output Capacitance 25°C -25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPIT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage +12 V 10 VO = 0.2 V V in , INPIT VOLTAGE (VOLTS) 80 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CIRRENT (mA) TAĂ=Ă-25°C 25°C 75°C Typical Application for PNP BRTs 1 LOAD 0.1 0 10 20 30 IC, COLLECTOR CIRRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://www.yeashin.com Figure 22. Inexpensive, Unregulated Current Source 7 REV.02 20120403 PACKAGE OUTLINE & DIMENSIONS MUN211 Series SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 http://www.yeashin.com inches mm 8 REV.02 20120403