NTUD3171PZ Small Signal MOSFET −20 V, −200 mA, Dual P−Channel, 1.0 x 1.0 mm SOT−963 Package Features • Dual P−Channel MOSFET • Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 1.0 mm • • • Package 1.5 V Gate Voltage Rating Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics. This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(ON) MAX ID Max 5.0 W @ −4.5 V 6.0 W @ −2.5 V −20 V −0.2 A 7.0 W @ −1.8 V 10 W @ −1.5 V D1 Applications • High Side Switch • High Speed Interfacing • Optimized for Power Management in Ultra Portable Equipment G1 G2 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±8 V Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C tv5s TA = 25°C Steady State TA = 85°C S1 P−Channel MOSFET S2 PINOUT: SOT−963 −200 ID −140 mA S1 1 6 D1 mW G1 2 5 G2 3 4 S2 −250 −125 TA = 25°C PD tp = 10 ms IDM −600 mA TJ, TSTG −55 to 150 °C IS −200 mA 260 °C −200 tv5s Pulsed Drain Current D2 Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 2. Pulse Test: pulse width v300 ms, duty cycle v2% D2 Top View MARKING DIAGRAM SOT−963 CASE 527AD 4 M G 4MG 1 = Specific Device Code = Date Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 August, 2008 − Rev. 0 1 Publication Order Number: NTUD3171PZ/D NTUD3171PZ THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 3) Symbol Max Unit RqJA 1000 °C/W Junction−to−Ambient – t = 5 s (Note 3) 600 3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = −250 mA −20 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V VGS = 0 V, VDS = −5.0 V TJ = 25°C −50 VGS = 0 V, VDS = −5.0 V TJ = 85°C −100 VGS = 0 V, VDS = −16 V TJ = 25°C −200 IGSS VDS = 0 V, VGS = ±5.0 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA Drain−to−Source On Resistance RDS(ON) VGS = −4.5 V, ID = −100 mA 2.0 5.0 VGS = −2.5 V, ID = −50 mA 2.6 6.0 VGS = −1.8 V, ID = −20 mA 3.4 7.0 VGS = −1.5 V, ID = −10 mA 4.0 10 nA ±100 nA −1.0 V ON CHARACTERISTICS (Note 4) −0.4 VGS = −1.2 V, ID = −1.0 mA 6.0 Forward Transconductance gFS VDS = −5.0 V, ID = −125 mA 0.35 Source−Drain Diode Voltage VSD VGS = 0 V, IS = −10 mA −0.6 W S −1.0 V CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 13.5 f = 1 MHz, VGS = 0 V VDS = −15 V 3.8 pF 2.0 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time Rise Time td(ON) tr Turn−Off Delay Time Fall Time td(OFF) 26 VGS = −4.5 V, VDD = −15 V, ID = −200 mA, RG = 2.0 W tf 46 196 ns 145 4. Switching characteristics are independent of operating junction temperatures ORDERING INFORMATION Device NTUD3171PZT5G Package Shipping† SOT−963 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTUD3171PZ TYPICAL CHARACTERISTICS 2.0 V ID, DRAIN CURRENT (A) 0.32 VGS = 2.2 thru 5 V 0.28 0.36 TJ = 25°C 1.8 V 0.24 1.6 V 0.20 0.16 1.4 V 0.12 0.08 1.2 V 0.24 0.20 0.16 0.12 0.08 0 1 2 3 4 0 5 2 3 4 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID = 200 mA TJ = 25°C 8 4 1 2 3 4 TJ = 25°C 3 VGS = 2.5 V 2 VGS = 4.5 V 1 0 5 0.05 0.10 0.15 0.20 0.25 0.30 0.35 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.50 10,000 ID = 200 mA VGS = 0 V VGS = 4.5 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1 4 1.75 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 12 0 TJ = 25°C 0.28 0.04 0.04 0 TJ = 125°C TJ = −55°C VDS ≥ 5 V 0.32 ID, DRAIN CURRENT (A) 0.36 1000 1.25 1.00 TJ = 150°C TJ = 125°C 100 0.75 0.50 −50 −25 0 25 50 75 100 125 150 10 0 TJ, JUNCTION TEMPERATURE (°C) 4 8 12 16 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTUD3171PZ TYPICAL CHARACTERISTICS 18 1000 Ciss 14 10 t, TIME (ns) 12 VGS = 0 V Coss 8 TJ = 25°C 6 td(off) tf 100 tr td(on) 10 4 0 VDD = 10 V ID = 200 mA VGS = 4.5 V Crss 2 0 2 4 6 8 10 12 14 16 18 1 20 1 10 100 DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation vs. Gate Resistance 0.18 VGS = 0 V 0.16 IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 16 TJ = 25°C 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0 0.2 0.4 0.6 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 1 NTUD3171PZ PACKAGE DIMENSIONS SOT−963 CASE 527AD−01 ISSUE D D 6 A B 5 4 1 2 3 A L HE E e 6X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. C DIM A b C D E e L HE C b 0.08 C A B MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.05 0.10 0.15 0.95 1.00 1.05 MIN INCHES NOM MAX 0.004 0.003 0.037 0.03 0.006 0.008 0.005 0.007 0.039 0.041 0.032 0.034 0.014 BSC 0.002 0.004 0.006 0.037 0.039 0.041 SOLDERING FOOTPRINT* 0.35 0.014 0.35 0.014 0.90 0.0354 0.20 0.008 0.20 0.008 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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