Fairchild FGL40N150D Electrical characteristics of the igbt Datasheet

FGL40N150D
General Description
Features
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
The FGL40N150D is designed for induction heating
applications.
•
•
•
•
High speed switching
Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A
High input impedance
Built-in fast recovery diode
Applications
Home appliances, induction heaters, IH JAR, and microwave ovens.
C
G
TO-264
G
C
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
E
E
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
FGL40N150D
1500
± 25
40
20
120
10
100
200
80
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
A
W
W
°C
°C
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2002 Fairchild Semiconductor Corporation
Typ.
----
Max.
0.625
0.83
25
Units
°C/W
°C/W
°C/W
FGL40N150D Rev. A1
FGL40N150D
IGBT
C
Symbol
Parameter
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 3mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
1500
---
----
-3.0
± 100
V
mA
nA
IC = 40mA, VCE = VGE
3.5
5.0
7.5
V
IC = 40A, VGE = 15V
2.5
3.5
4.5
V
VCE = 30V, VGE = 0V,
f = 1MHz
----
2450
220
75
----
pF
pF
pF
--------
100
350
200
100
110
15
40
200
700
400
300
170
25
60
ns
ns
ns
ns
nC
nC
nC
Min.
--
Typ.
1.3
Max.
1.8
Units
V
--
170
300
ns
Off Characteristics
BVCES
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 600 V, IC = 40A,
RG = 51Ω, VGE = 15V,
Resistive Load, TC = 25°C
VCE = 600 V, IC = 40A,
VGE = 15V
Electrical Characteristics of DIODE T
C
= 25°C unless otherwise noted
Symbol
VFM
Parameter
Diode Forward Voltage
IF = 10A
trr
Diode Reverse Recovery Time
IF = 10A, di/dt = 200A/us
©2002 Fairchild Semiconductor Corporation
Test Conditions
FGL40N150D Rev. A1
FGL40N150D
Electrical Characteristics of the IGBT T
20V
Common Emitter
15V
T C = 25 C
100
o
TC = 25 C
8V
o
Collector Current, IC [A]
Collector Current, IC [A]
80
Common Emitter
VGE = 15V
10V
o
60
40
VGE = 6V
20
TC = 125 C
80
60
40
20
0
0
0
2
4
6
8
0
Collector - Emitter Voltage, VCE [V]
2
4
6
10
Fig 2. Typical Output Characteristics
6
5000
Common Emitter
VGE = 15V
Common Emitter
VGE =0V, f=1MHz
5
o
Tc=25 C
4000
IC = 80A
Capacitance [pF]
Collector - Emitter Voltage, VCE [V]
8
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
4
IC = 40A
3
IC = 20A
2
Cies
3000
2000
Coes
1000
Cres
1
0
25
50
75
100
125
150
1
10
Collector - Emitter Voltage, VCE [V]
o
Case Temperature, TC [ C]
Fig 4. Typical Capacitance vs.
Collector to Emitter Voltage
Fig 3. Collector to Emitter Saturation
Voltage vs. Case Temperature
20
20
Common Emitter
Common Emitter
0
o
T C = 125 C
Collector - Emitter Voltage, VCE[V]
T C = 25 C
Collector - Emitter Voltage, VCE[V]
FGL40N150D
120
100
16
12
8
80A
40A
4
20A
16
12
8
80A
40A
4
20A
0
0
0
4
8
12
16
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
©2002 Fairchild Semiconductor Corporation
20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Fig 6. Saturation Voltage vs. VGE
FGL40N150D Rev. A1
Common Emitter
VGE = ± 15V, RG = 51Ω
1000
o
o
TC = 25 C
o
TC = 125 C
TC = 25 C
o
TC = 125 C
1000
tr
Switching Time [ns]
Switching Time [ns]
FGL40N150D
Common Emitter
VGE = ± 15V, RG = 51Ω
tf
100
td(off)
td(on)
100
10
10
20
30
40
50
60
70
80
10
90
20
30
Fig 7. Turn-Off Characteristics vs.
Collector Current
TC = 25 C
70
80
90
o
TC = 25 C
o
TC = 125 C
Switching Time [ns]
Switching Loss [µJ]
60
Common Emitter
VCC = 600V, VGE = ± 15V
IC = 40A
o
Eoff
1000
50
Fig 8. Turn-On Characteristics vs.
Collector Current
Common Emitter
VG E = ± 15V, RG = 51Ω
10000
40
Collector Current, IC [A]
Collector Current, IC [A]
Eon
1000
o
TC = 125 C
tf
100
td(off)
100
10
20
30
40
50
60
70
80
10
90
100
Gate Resistance, RG [Ω ]
Collector Current, IC [A]
Fig 10. Turn-Off Characteristics vs.
Gate Resistance
Fig 9. Switching Loss vs. Collector Current
1000
Common Emitter
VCC = 600V, VGE = ± 15V
IC = 40A
10000
o
o
o
tr
TC = 125 C
td(on)
100
TC = 25 C
Switching Loss [µJ]
Switching Time [ns]
TC = 25 C
Common Emitter
VCC = 600V, VGE = ± 15V
IC = 40A
o
TC = 125 C
Eoff
1000
Eon
10
10
100
Gate Resistance, RG [Ω ]
Fig 11. Turn-On Characteristics vs.
Gate Resistance
©2002 Fairchild Semiconductor Corporation
10
100
Gate Resistance, RG [Ω ]
Fig 12. Switching Loss vs. Gate Resistance
FGL40N150D Rev. A1
FGL40N150D
16
Common Emitter
R L = 15Ω , V CC = 600V
14
Ic MAX (Pulsed)
100
Ic MAX (Continuous)
100µ s
10
8
6
4
10
1ms
DC Operation
1
Single Nonrepetitive
o
Pulse Tc = 25 C
Curves must be derated
linearly with increase
in temperature
0.1
2
0.01
0
0
25
50
75
100
125
0.1
150
1
100
1000
Fig 14. SOA Characteristics
500
300
450
270
Reverse Recovery Time, t rr [ns]
Reverse Recovery Time, t rr [ns]
Fig 13. Gate Charge Characteristics
400
350
300
250
10
Collector - Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
IF = 10A
200
150
100
50
240
di/dt = 50A/us
210
180
100A/us
150
200A/us
120
90
60
30
0
0
50
100
150
200
250
0
300
1
2
3
4
5
6
7
8
9
10
Forward Current, IF [A]
di/dt [A/us]
Fig 15. Typical Trr vs. di/dt
Fig 16. Typical Trr vs. Forward Current
1000
Instantaneous Forward Current, I F [A]
100
100
Reverse Current, I R [uA]
50µ s
T C = 25 C
12
Collector Current, I C [A]
Gate - Emitter Voltage, VGE [V]
o
T C = 125℃
10
100℃
1
25℃
0.1
0.01
10
TC =125℃
25℃
1
0.1
1E-3
300.0
600.0
900.0
1.2k
1.5k
Reverse Voltage, V R [V]
Fig 17. Reverse Current vs. Reverse Voltage
©2002 Fairchild Semiconductor Corporation
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Voltage, V F [V]
Fig 18. Typical Forward Voltage Drop
vs. Forward Current
FGL40N150D Rev. A1
FGL40N150D
Package Dimension
(8.30)
(1.00)
(2.00)
(7.00)
20.00 ±0.20
2.50 ±0.10
4.90 ±0.20
(1.50)
(1.50)
2.50 ±0.20
3.00 ±0.20
(1.50)
20.00 ±0.50
(7.00)
(2.00)
(11.00)
1.50 ±0.20
)
.20
.00
0 ±0
0)
2.0
(R
(R1
(0.50)
ø3.3
(9.00)
(9.00)
(8.30)
(4.00)
20.00 ±0.20
6.00 ±0.20
TO-264
+0.25
1.00 –0.10
+0.25
0.60 –0.10
2.80 ±0.30
(2.80)
5.45TYP
[5.45 ±0.30]
(0.15)
(1.50)
3.50 ±0.20
5.00 ±0.20
5.45TYP
[5.45 ±0.30]
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
FGL40N150D Rev. A1
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
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2. A critical component is any component of a life support
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device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
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when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H5
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