UMS CHA6105 8-12ghz driver amplifier Datasheet

CHA6105
RoHS COMPLIANT
8-12GHz Driver Amplifier
GaAs Monolithic Microwave IC
Description
VD1
The CHA6105 is a monolithic three-stage
medium power amplifier designed for
X-band applications.
The driver provides typically 31.5dBm
output power at saturation and is suitable
for systems requiring a high compression
level. Moreover it includes a biasing
control circuit that makes Pout less
sensitive to spread and chip environment.
VD2
VD3
●
●
OUT
IN
VD3
Control circuit
V_C
Main Features
Frequency range: 8-12GHz
31.5dBm Saturated output power
30dB Linear Gain
Quiescent bias point: 8V@700mA
Chip size: 2.80 x 2.21 x 0.07mm
1100
Pout (dBm) @ 3dBc
(dBm)
33
32
1050
1000
31
950
30
900
29
850
28
800
27
750
26
700
25
Id (mA) @ 3dBc
(%)
Linear Gain (dB)
24
550
22
500
7
7,5
8
8,5
9
9,5
10
10,5
11
11,5
12
12,5
Frequency (GHz)
Pout & Id @ 3dB gain compression
and Linear Gain (Pulse 25µs 10% Tamb. 20°C)
Tamb = +20°C, Vc = +8V (Pulse 25µs 10%)
Fop
G
Psat
Idq
Parameter
Min
Operating frequency range
Typ
8
Small signal gain
Max
Unit
12
GHz
30
dB
Saturated output power
31.5
dBm
Power supply quiescent current
700
mA
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA61050106 - 16 Apr 10
600
23
Main Characteristics
Symbol
650
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
13
Id (mA) @ 3dBc
It is available in chip form.
34
Pout (dBm) @ 3dBc, Linear Gain (dB)
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
8-12GHz Driver Amplifier
CHA6105
Electrical Characteristics
Vd = +8V, Pulse 25µs 10%
Symbol
Parameter
Top
Operating temperature range
Fop
Operating frequency range
G
Min
Small signal gain at 25°C
Max
Unit
-40
85
°C
8
12
GHz
34
dB
25.5
∆G_T
Linear gain variation vs temperature at 25°C
P1dB
Output power at 1dB gain compression at 25°C
P3dB
Output power at 3dB gain compression at 25°C
Psat
Typ
30
-0.03 5
dB/°C
30.5
dBm
31
dBm
Output power at saturation
31.5
dBm
dBS11
Input Return Loss
2:1
dB
dBS22
Output Return Loss
2:1
dB
8
V
mA
29.5
Vd
Power supply voltage
Idq
Power supply quiescent current
700
Consumption under 3dB gain compression
925
Id_3dBc
1150
mA
V_c
Drain current control voltage
-5
V
I_c
Biasing circuit consumption
25
mA
Absolute Maximum Ratings (1)
Tamb = 20°C
Symbol
Pin_max
Cmp
Vd
Parameter
Values
Unit
Maximum RF input power
13
dBm
Compression level
13
dB
Power supply voltage
9
V
850
mA
-6
V
<Id>
maximum value of CW power supply current
V_c
Drain current control voltage
Tj
Maximum Junction temperature
175
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage
Ref. : DSCHA61050106 - 16 Apr 10
2/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
8-12GHz Driver Amplifier
CHA6105
Typical measurement characteristics
Measurements
Vd = 8V; Vctrl = -5V (Id Quiescent = 700mA). Pulsed = 25µs 10%
40
38
Linear Gain (dB)
36
34
32
30
28
85°C
25°C
-20°C
-40°C
26
24
22
20
18
7
7,5
8
8,5
9
9,5
10
10,5
11
11,5
12
12,5
13
12,5
13
Frequency (GHz)
Linear gain vs frequency and temperature
34
33
32
Pout (dBm)
31
30
29
28
Temp 85°C
Temp 25°C
Temp -20°C
Temp -40°C
27
26
25
24
7
7,5
8
8,5
9
9,5
10
10,5
11
11,5
12
Frequency (GHz)
Output Power @ 3dB gain compression vs frequency and temperature
Ref. DSCHA61050106 - 16 Apr 10
3/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
8-12GHz Driver Amplifier
CHA6105
Ic-low Pin Temp 85°C
1100
Ic-low Pin Temp 25°C
Ic-low Pin Temp -20°C
1050
Ic-low Pin Temp -40°C
Ic-3dB Temp 85°C
1000
Ic-3dB Temp 25°C
950
Ic-3dB Temp -20°C
Ic-3dB Temp -40°C
Id (mA)
900
850
800
750
700
650
600
550
500
7
7,5
8
8,5
9
9,5
10
10,5
11
11,5
12
12,5
13
Frequency (GHz)
Drain current @ low Pin and @ 3dB gain compression vs frequency and temperature
Tamb = 25°C, Vd = 8V; Vctrl = -5V (Id Quiescent = 7 00mA). Pulsed = 25µs 10%
34
32
30
Pout (dBm)
28
26
24
8GHz
9GHz
10GHz
11GHz
12GHz
22
20
18
16
14
-15
-13
-11
-9
-7
-5
-3
-1
1
3
5
7
9
11
13
Pin (dBm)
Output power vs Input power
Ref. : DSCHA61050106 - 16 Apr 10
4/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
Pout (dBm)
8-12GHz Driver Amplifier
CHA6105
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
8GHz
9GHz
10GHz
11GHz
12GHz
-2
-1
0
1
2
3
4
5
6
7
8
9
10
11
12
13
7
9
11
13
Compression (dB)
Output power vs Gain compression
1100
1050
1000
950
Id (mA)
900
8GHz
9GHz
10GHz
11GHz
12GHz
850
800
750
700
650
600
550
500
-15
-13
-11
-9
-7
-5
-3
-1
1
3
5
Pin (dBm)
Drain current vs Input power
Ref. DSCHA61050106 - 16 Apr 10
5/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
8-12GHz Driver Amplifier
CHA6105
Chip Mechanical Data and Pin references
22
3
4
5
6
1
16 15
14
13 12
11 10 9
8
7
Chip thickness = 70µm +/- 10µm
RF pads (1, 6) = 122 x 150µm²
DC pads (2, 8, 9, 10, 11, 12, 13, 14, 15, 16) = 100 x 100µm²
DC pads (3, 4, 5, 7) = 186 x 100µm²
Pin number
1
11
14
2, 8, 12, 15
9, 10, 13, 16
3, 4, 5, 7
6
Pin name
IN
V_C
GR
GND
VD
OUT
Ref. : DSCHA61050106 - 16 Apr 10
Description
Input RF
Control Voltage
Not used
Ground (NC)
Not Used
Drain supply voltage
Output RF
6/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
8-12GHz Driver Amplifier
CHA6105
Assembly recommendations in test fixture
Ref. DSCHA61050106 - 16 Apr 10
7/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
8-12GHz Driver Amplifier
CHA6105
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity
and handling recommendations for the UMS products.
Ordering Information
Chip form
:
CHA6105-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S.
assumes no responsibility for the consequences of use of such information nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any
patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication
are subject to change without notice. This publication supersedes and replaces all information previously supplied.
United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life
support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA61050106 - 16 Apr 10
8/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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