ONSEMI NST3906DXV6T1

NST3906DXV6T1,
NST3906DXV6T5
Dual General Purpose
Transistor
The NST3906DXV6T1 device is a spin- off of our popular
SOT-23/SOT-323 three-leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT- 563
six-leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low-power surface mount
applications where board space is at a premium.
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(3)
(2)
Q1
hFE, 100-300
Low VCE(sat), ≤ 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Lead-Free Solder Plating
Q2
(4)
(5)
6
Symbol
Value
Unit
Collector - Emitter Voltage
VCEO
-40
Vdc
Collector - Base Voltage
VCBO
-40
Vdc
Emitter - Base Voltage
VEBO
-5.0
Vdc
IC
-200
mAdc
ESD
HBM>16000,
MM>2000
V
Symbol
Max
Unit
PD
357
(Note 1)
2.9
(Note 1)
mW
Collector Current - Continuous
Electrostatic Discharge
(6)
NST3906DXV6T1
MAXIMUM RATINGS
Rating
(1)
54
1
2
3
SOT-563
CASE 463A
PLASTIC
MARKING DIAGRAM
A2 D
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance
Junction-to-Ambient
RJA
Characteristic
(Both Junctions Heated)
Total Device Dissipation
TA = 25°C
mW/°C
ORDERING INFORMATION
°C/W
350
(Note 1)
Symbol
Max
Unit
PD
500
(Note 1)
4.0
(Note 1)
mW
Derate above 25°C
A2 = Specific Device Code
D = Date Code
Device
Package
Shipping
NST3906DXV6T1
SOT-563
4 mm pitch
4000/Tape & Reel
NST3906DXV6T5
SOT-563
2 mm pitch
8000/Tape & Reel
mW/°C
Thermal Resistance
Junction-to-Ambient
RJA
250
(Note 1)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
- 55 to +150
°C
1. FR-4 @ Minimum Pad
 Semiconductor Components Industries, LLC, 2003
March, 2003 - Rev. 0
1
Publication Order Number:
NST3906DXV6T1/D
NST3906DXV6T1, NST3906DXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector - Emitter Breakdown Voltage (Note 2)
V(BR)CEO
-40
-
Vdc
Collector - Base Breakdown Voltage
V(BR)CBO
-40
-
Vdc
Emitter - Base Breakdown Voltage
V(BR)EBO
-5.0
-
Vdc
IBL
-
-50
nAdc
ICEX
-
-50
nAdc
60
80
100
60
30
300
-
-
-0.25
-0.4
-0.65
-
-0.85
-0.95
OFF CHARACTERISTICS
Base Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = -0.1 mAdc, VCE = -1.0 Vdc)
(IC = -1.0 mAdc, VCE = -1.0 Vdc)
(IC = -10 mAdc, VCE = -1.0 Vdc)
(IC = -50 mAdc, VCE = -1.0 Vdc)
(IC = -100 mAdc, VCE = -1.0 Vdc)
hFE
Collector - Emitter Saturation Voltage
(IC = -10 mAdc, IB = -1.0 mAdc)
(IC = -50 mAdc, IB = -5.0 mAdc)
VCE(sat)
Base - Emitter Saturation Voltage
(IC = -10 mAdc, IB = -1.0 mAdc)
(IC = -50 mAdc, IB = -5.0 mAdc)
VBE(sat)
-
Vdc
Vdc
SMALL- SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product
fT
250
-
MHz
Output Capacitance
Cobo
-
4.5
pF
Input Capacitance
Cibo
-
10.0
pF
Input Impedance
(VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz)
hie
2.0
12
kΩ
Voltage Feedback Ratio
(VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz)
hre
0.1
10
X 10- 4
Small - Signal Current Gain
(VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz)
hfe
100
400
-
Output Admittance
(VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz)
hoe
3.0
60
mhos
Noise Figure
(VCE = -5.0 Vdc, IC = -100 Adc, RS = 1.0 k Ω, f = 1.0 kHz)
NF
-
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = -3.0 Vdc, VBE = 0.5 Vdc)
td
-
35
Rise Time
(IC = -10 mAdc, IB1 = -1.0 mAdc)
tr
-
35
Storage Time
(VCC = -3.0 Vdc, IC = -10 mAdc)
ts
-
225
Fall Time
(IB1 = IB2 = -1.0 mAdc)
tf
-
75
2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle ≤ 2.0%.
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2
ns
ns
NST3906DXV6T1, NST3906DXV6T5
3V
3V
< 1 ns
+9.1 V
275
275
< 1 ns
10 k
+0.5 V
10 k
0
Cs < 4 pF*
10.6 V
Cs < 4 pF*
1N916
300 ns
DUTY CYCLE = 2%
10 < t1 < 500 s
10.9 V
t1
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
CAPACITANCE (pF)
7.0
Cobo
5.0
Cibo
3.0
2.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
20 30 40
Figure 3. Capacitance
TJ = 25°C
TJ = 125°C
500
500
IC/IB = 10
300
200
VCC = 40 V
IB1 = IB2
300
200
tr @ VCC = 3.0 V
15 V
30
20
t f , FALL TIME (ns)
TIME (ns)
IC/IB = 20
100
70
50
100
70
50
30
20
IC/IB = 10
40 V
10
7
5
10
2.0 V
7
5
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 4. Turn - On Time
Figure 5. Fall Time
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3
200
NST3906DXV6T1, NST3906DXV6T5
TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = - 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
SOURCE RESISTANCE = 200 IC = 1.0 mA
4.0
f = 1.0 kHz
SOURCE RESISTANCE = 200 IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 A
2.0
SOURCE RESISTANCE = 2.0 k
IC = 100 A
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
5.0
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
IC = 0.5 mA
8
6
4
IC = 50 A
2
IC = 100 A
0
100
0.1
0.2
40
0.4
1.0 2.0
4.0
10
20
Rg, SOURCE RESISTANCE (k OHMS)
Figure 6.
100
Figure 7.
h PARAMETERS
(VCE = - 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE ( mhos)
h fe , DC CURRENT GAIN
300
200
100
70
50
70
50
30
20
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5
5.0 7.0 10
0.1
0.2
h ie , INPUT IMPEDANCE (k OHMS)
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 9. Output Admittance
hre , VOLTAGE FEEDBACK RATIO (x 10 −4)
Figure 8. Current Gain
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
Figure 10. Input Impedance
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 11. Voltage Feedback Ratio
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4
NST3906DXV6T1, NST3906DXV6T5
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
+25°C
1.0
0.7
−55 °C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 12. DC Current Gain
1.0
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 13. Collector Saturation Region
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
V , TEMPERATURE COEFFICIENTS (mV/ °C)
1.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.6
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0
2.0
50
5.0
10
20
IC, COLLECTOR CURRENT (mA)
100
1.0
0.5
0
+25°C TO +125°C
−55 °C TO +25°C
−0.5
+25°C TO +125°C
−1.0
−55 °C TO +25°C
VB FOR VBE(sat)
−1.5
−2.0
200
VC FOR VCE(sat)
0
Figure 14. “ON” Voltages
20
40
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
160
Figure 15. Temperature Coefficients
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5
180 200
NST3906DXV6T1, NST3906DXV6T5
INFORMATION FOR USING THE SOT-563 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.3
0.45
1.0
1.35
0.5
0.5
Dimensions in mm
SOT-563
SOT-563 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT-563 is a function of
the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature
of the die, RθJA, the thermal resistance from the device
junction to ambient, and the operating temperature, TA.
Using the values provided on the data sheet for the
SOT-563 package, PD can be calculated as follows:
PD =
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. Therefore, the following items should always be observed in
order to minimize the thermal stress to which the devices
are subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
TJ(max) - TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 150 milliwatts.
PD =
150°C - 25°C
833°C/W
= 150 milliwatts
The 833°C/W for the SOT-563 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT-563 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage
to the device
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NST3906DXV6T1, NST3906DXV6T5
PACKAGE DIMENSIONS
SOT-563, 6 LEAD
CASE 463A-01
ISSUE O
A
-X-
5
6
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
C
K
4
B
-Y-
3
D
G
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
J
5 PL
6
0.08 (0.003)
EMITTER 1
BASE 1
COLLECTOR 2
EMITTER 2
BASE 2
COLLECTOR 1
DIM
A
B
C
D
G
J
K
S
S
M
X Y
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
STYLE 3:
PIN 1.
2.
3.
4.
5.
6.
EMITTER 1
EMITTER2
BASE 2
COLLECTOR 2
BASE 1
COLLECTOR 1
CATHODE 1
CATHODE 1
ANODE/ANODE 2
CATHODE 2
CATHODE 2
ANODE/ANODE 1
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7
STYLE 4:
PIN 1.
2.
3.
4.
5.
6.
MILLIMETERS
MIN
MAX
1.50
1.70
1.10
1.30
0.50
0.60
0.17
0.27
0.50 BSC
0.08
0.18
0.10
0.30
1.50
1.70
COLLECTOR
COLLECTOR
BASE
EMITTER
COLLECTOR
COLLECTOR
INCHES
MIN
MAX
0.059
0.067
0.043
0.051
0.020
0.024
0.007
0.011
0.020 BSC
0.003
0.007
0.004
0.012
0.059
0.067
NST3906DXV6T1, NST3906DXV6T5
Thermal Clad is a registered trademark of the Bergquist Company.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
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Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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Phone: 81-3-5773-3850
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800-282-9855 Toll Free USA/Canada
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8
NST3906DXV6T1/D