ISOCOM MOC8113 Non-base lead optically coupled isolator phototransistor output Datasheet

MOC8111X,MOC8112X,MOC8113X
MOC8111, MOC8112, MOC8113
NON-BASE LEAD
OPTICALLY COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead forms : - STD
- G form
- SMD approved to CECC 00802
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BSI approved - Certificate No. 8001
7.0
6.0
FEATURES
Options :10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kVRMS ,7.5kVPK )
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Base pin unconnected for improved noise
immunity in high EMI environment
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1
2
6
5
3
4
1.2
7.62
6.62
DESCRIPTION
The MOC8111, MOC8112, MOC8113 series of
optically coupled isolators consist of infrared
light emitting diode and NPN silicon photo
transistor in a standard 6 pin dual in line plastic
package with the base pin unconnected.
Dimensions in mm
2.54
7.62
4.0
3.0
13°
Max
0.5
3.0
0.5
3.35
0.26
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Signal transmission between systems of
different potentials and impedances
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
105mW
OUTPUT TRANSISTOR
OPTION SM
OPTION G
SURFACE MOUNT
7.62
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Power Dissipation
30V
6V
160mW
POWER DISSIPATION
0.6
0.1
10.46
9.86
1.25
0.75
0.26
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
10.16
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
31/3/03
DB92197m-AAS/A2
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
Input
MIN TYP MAX UNITS
Forward Voltage (VF)
1.15
1.5
V
IF = 10mA
10
µA
VR = 6V
V
IC = 1mA
V
nA
IE = 100µA
VCE = 10V
mA
mA
mA
10mA IF , 10V VCE
10mA IF , 10V VCE
10mA IF , 10V VCE
V
10mA IF , 0.5mA IC
Input to Output Isolation Voltage VISO 5300
7500
VRMS
VPK
See note 1
See note 1
Input-output Isolation Resistance RISO 5x1010
Ω
VIO = 500V (note 1)
µs
µs
VCC = 5V , IF = 10mA
RL = 75Ω (FIG 1)
Reverse Current (IR)
Output
Coupled
Collector-emitter Breakdown (BVCEO)
( Note 2 )
Emitter-collector Breakdown (BVECO)
Collector-emitter Dark Current (ICEO)
Output Collector Current ( IC )
MOC8111
MOC8112
MOC8113
30
6
50
2
5
10
Collector-emitter Saturation VoltageVCE (SAT)
Response Time (Rise), tr
Response Time (Fall), tf
Note 1
Note 2
TEST CONDITION
0.15
2
2
0.4
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
FIGURE1
31/3/03
DB92197m-AAS/A2
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
TA = 25°C
50
Collector current IC (mA)
Collector power dissipation PC (mW)
200
150
100
50
50
30
40
20
30
15
20
10
10
IF = 5mA
0
0
-30
0
25
50
75
100
0
125
Forward Current vs. Ambient Temperature
70
280
Current transfer ratio CTR (%)
320
60
50
40
30
20
0
8
10
VCE = 10V
TA = 25°C
240
200
MOC8113
160
120
MOC8112
80
MOC8111
40
0
-30
0
25
50
75
100
1
125
2
Ambient temperature TA ( °C )
Collector-emitter saturation voltage VCE(SAT) (V)
1.5
IF = 10mA
VCE = 10V
1.0
0.5
0
-30
0
25
50
75
Ambient temperature TA ( °C )
5
10
20
50
Forward current IF (mA)
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
6
Current Transfer Ratio vs. Forward Current
80
10
31/3/03
4
Collector-emitter voltage VCE ( V )
Ambient temperature TA ( °C )
Forward current IF (mA)
2
100
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.14
0.12
IF = 10mA
IC = 0.5mA
0.10
0.08
0.06
0.04
0.02
0
-30
0
25
50
75
100
Ambient temperature TA ( °C )
DB92197m-AAS/A2
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