IXYS IXDH20N120 High voltage igbt with optional diode Datasheet

IXDH 20N120
VCES
= 1200 V
= 38 A
IXDH 20N120 D1 IC25
VCE(sat) typ = 2.4 V
High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
C
C
G
TO-247 AD
G
G
C
E
IXDH 20N120
Symbol
Conditions
VCES
TJ = 25°C to 150°C
IXDH 20N120 D1
Maximum Ratings
1200
VCGR
TJ = 25°C to 150°C; RGE = 20 kW
VGES
V
1200
V
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
38
A
IC90
TC = 90°C
25
A
ICM
TC = 90°C, tp = 1 ms
50
A
RBSOA
VGE = ±15 V, TJ = 125°C, RG = 82 W
Clamped inductive load, L = 30 µH
ICM = 35
VCEK < VCES
A
tSC
(SCSOA)
VGE = ±15 V, VCE = VCES, TJ = 125°C
RG = 82 W, non repetitive
10
µs
PC
TC = 25°C
G = Gate,
C = Collector ,
E = Emitter
TAB = Collector
Features
●
●
●
●
●
●
●
●
●
NPT IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard package
Advantages
●
●
IGBT
Diode
C (TAB)
E
E
200
75
W
W
TJ
-55 ... +150
°C
Tstg
-55 ... +150
°C
300
°C
Space savings
High power density
Typical Applications
●
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
●
●
●
●
Md
Mounting torque
0.8 - 1.2
Weight
Nm
6
Symbol
Conditions
V(BR)CES
VGE = 0 V
VGE(th)
IC = 0.6 mA, VCE = VGE
ICES
VCE = VCES
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1200
TJ = 25°C
TJ = 125°C
VCE = 0 V, VGE = ± 20 V
VCE(sat)
IC = 20 A, VGE = 15 V
4.5
6.5
2
V
1 mA
mA
± 500 nA
2.4
3
V
031
IGES
V
© 2000 IXYS All rights reserved
1-4
IXDH 20N120
IXDH 20N120 D1
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Cies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
Qg
IC = 20 A, VGE = 15 V, VCE = 0.5 VCES
td(on)
tr
td(off)
tf
Inductive load, TJ = 125°C
IC = 20 A, VGE = ±15 V,
VCE = 600 V, RG = 82 W
1000
pF
150
pF
70
pF
70
nC
100
ns
75
ns
500
ns
70
ns
Eon
3.1
mJ
Eoff
2.4
mJ
RthJC
RthCH
TO-247 AD Outline
0.63 K/W
Package with heatsink compound
Reverse Diode (FRED) [D1 version only]
Conditions
VF
IF = 20 A, VGE = 0 V
IF = 20 A, VGE = 0 V, TJ = 125°C
IF
TC = 25°C
TC = 90°C
IRM
IF = 20 A, -diF/dt = 400 A/µs, VR = 600 V
trr
VGE = 0 V, TJ = 125°C
trr
IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V
© 2000 IXYS All rights reserved
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
RthJC
0.25
2.6
2.1
2.8
V
V
33
20
A
A
15
A
200
ns
40
ns
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
ÆP 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
1.6 K/W
2-4
IXDH 20N120
IXDH 20N120 D1
40
35
A
IC
40
VGE=17V
15V
TJ = 25°C
VGE=17V
TJ = 125°C
A
35
30
13V
IC 30
13V
25
11V
25
11V
20
20
15
15
9V
10
9V
10
5
5
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0 V
0.5
1.0
1.5
2.0
VCE
Fig. 1 Typ. output characteristics
40
2.5 3.0
VCE
3.5 V
Fig. 2 Typ. output characteristics
45
VCE = 20V
35
A
IC
15V
A
40
TJ = 25°C
35
30
IF
25
30
25
20
20
15
TJ = 125°C
15
10
10
5
5
0
5
6
7
8
9
10
11 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0 V
VF
VGE
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode (D1 version only)
400
20
20
V VCE = 600V
IC
TJ = 25°C
A
= 20A
VGE 15
IRM 15
10
10
5
5
ns
300 trr
trr
200
TJ= 125°C
VR= 600V
IF = 20A
IRM
IXDH20N120D1
0
0
0
10
20
30
40
50
60
70
QG
Fig. 5 Typ. turn on gate charge
© 2000 IXYS All rights reserved
80 nC
0
100
200
300
400 A/ms
-di/dt
100
0
Fig. 6 Typ. turn off characteristics of
free wheeling diode (D1 version only)
3-4
IXDH 20N120
IXDH 20N120 D1
7
Eon
5
140
6
mJ
ns
120
5
100
4
80
td(on)
3
2
Eon
10
20
30
4
t
VCE = 600V
VGE = ±15V
200
RG = 82W
TJ = 125°C
1
100
tf
0
0
10
20
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
Eon
8
Fig. 8 Typ. turn off energy and switching
times versus collector current
4
240
VCE = 600V
VGE = ±15V
IC = 20A
TJ = 125°C
mJ
td(on)
Eon
160
t
3
Eoff
1600
Eoff
VCE = 600V
VGE = ±15V
IC = 20A
TJ = 125°C
mJ
ns
tr
4
ns
td(off)
1200
2
800
1
400
t
80
0
0
50
100
150
200
250
300
W
tf
0
0
350
0
50
100
150
RG
10
A
35
K/W
1
25
RG = 82W
TJ = 125°C
VCEK < VCES
20
15
10
ZthJC
0.1
0
0
200
400
600
800 1000 1200 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
© 2000 IXYS All rights reserved
300
0
W 350
diode
IGBT
0.01
0.001
5
250
Fig.10 Typ. turn off energy and switching
times versus gate resistor
40
30
200
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
ICM
0
40
A
30
IC
12
400
300
2
0
40
A
ns
Eoff
3
20
0
0
Eoff
VCE = 600V
VGE = ±15V 60
RG = 82W
TJ = 125°C 40
tr
1
t
500
td(off)
mJ
single pulse
0.0001
0.00001 0.0001
IXDH20N120D1
0.001
0.01
0.1
s
1
t
Fig. 12 Typ. transient thermal impedance
4-4
Similar pages