ICSI IC62VV1008LL-70B 1 m x 8 bit low voltage and ultra low power cmos static ram Datasheet

IC62VV1008L
IC62VV1008LL
Document Title
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
Revision History
Revision No
History
Draft Date
Remark
0A
Initial Draft
September 4,2002
Preliminary
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc.
LPSR026-0A 9/4/2002
1
IC62VV1008L
IC62VV1008LL
1M x 8 1.8V ULTRA LOW POWER
CMOS STATIC RAM
FEATURES
Preliminary
DESCRIPTION
The ICSI IC62VV1008L and IC62VV1008LL is a low voltage,
• Access times of 70, 100 ns
• CMOS Low power operation:
ICC=10mA (typical)* operation
ISB2=3µA (typical)* standby
• Low data retention voltage: 1.2V (min.)
• Output Enable (OE) and Two Chip Enables
(CE1, CE2) inputs for ease in applications
• TTL compatible inputs and outputs
• Fully static operation:
— No clock or refresh reguired
• Single 1.65V-2.2V power supply
• Wafer level burn in test mode
• Available in the know good die form and
48-pin 8*10mm TF-BGA
1,048,576 words by 8 bits, CMOS SRAM. It is fabricated using
ICSI's low voltage, six transistor (6T), CMOS technology. The
device is targeted to satisfy the demands of the state-of-the-art
technologies such as cell phones and pagers.
When CE1 is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced down with CMOS input levels. Additionally, easy
memory expansion is provided by using two Chip Enable
inputs, CE1 and CE2. The active LOW Write Enable ( WE)
controls both writing and reading of the memory.
The IC62VV1008L and IC62VV1008LL are available in know
good die form and 48-pin 8*10mm TF-BGA.
* Typical values are measured at VCC=1.8V, TA=25°C
FUNCTIONAL BLOCK DIAGRAM
A0-A19
DECODER
1024K x 8
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
VCC
GND
I/O0-I/O7
CE1
CE2
OE
CONTROL
CIRCUIT
WE
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
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Integrated Circuit Solution Inc.
LPSR026-0A 9/4/2002
IC62VV1008L
IC62VV1008LL
PIN CONFIGURATIONS
48-Pin 8*10mm TF-BGA (TOP View)
1
2
3
4
5
6
A
NC
OE
A0
A1
A2
CE2
B
NC
NC
A3
A4
CE1
NC
C
I/O0
NC
A5
A6
NC
I/O4
D
GND
I/O1
A17
A7
I/O5
Vcc
E
Vcc
I/O2
Vcc
A16
I/O6
GND
F
I/O3
NC
A14
A15
NC
I/O7
G
NC
NC
A12
A13
WE
NC
H
A18
A8
A9
A10
A11
A19
PIN DESCRIPTIONS
A0-A19
Address Inputs
CE1
Chip Enable 1 Input
CE2
Chip Enable 2 Input
OE
Output Enable Input
WE
Write Enable Input
I/O0-I/O7
Data Input/Output
NC
No Connection
Vcc
Power
GND
Ground
TRUTH TABLE
WE
CE1
CE2
OE
I/O Operation
Vcc Current
Not Selected
(POWER-DOWN)
X
X
H
X
X
L
X
X
High-Z
High-Z
ISB2
ISB2
Output Disabled
Read
Write
H
H
L
L
L
L
H
H
H
H
L
X
High-Z
DOUT
DIN
ICC
ICC
ICC
Mode
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
VCC
1.65V - 2.2V
–40°C to +85°C
1.65V - 2.2V
Integrated Circuit Solution Inc.
LPSR026-0A 9/4/2002
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IC62VV1008L
IC62VV1008LL
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM
VCC
TBIAS
TSTG
PT
Parameter
Terminal Voltage with Respect to GND
Vcc related to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Value
–0.5 to Vcc +0.4
–0.3 to +2.4
–40 to +85
–65 to +150
1
Unit
V
V
°C
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE(1)(2)
Symbol
Parameter
CIN
Input Capacitance
COUT
Output Capacitance
Conditions
Max.
Unit
VIN = 0V
6
pF
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25oC, f = 1 MHz, VCC = 3.0 V
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
VOH
VOL
VIH
VIL
ILI
ILO
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage(1)
Input LOW Voltage(2)
Input Leakage
Output Leakage
VCC = Min., IOH = –0.1 mA
VCC = Min., IOL = 0.1 mA
1.4
—
1.4
–0.2
–1
–1
—
0.2
VCC + 0.2
0.4
1
1
V
V
V
V
µA
µA
GND ≤ VIN ≤ VCC
GND ≤ VOUT ≤ VCC
Notes:
1. VIH(max.) = VCC +2.0V for pulse width less than 10 ns.
1. VIL(min.) = –2.0V for pulse width less than 10 ns.
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Integrated Circuit Solution Inc.
LPSR026-0A 9/4/2002
IC62VV1008L
IC62VV1008LL
IC62VV1008L POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-70
Symbol Parameter
Test Conditions
Min.
-100
Max. Min.
Max.
Unit
ICC1
Vcc Dynamic Operating
Supply Current
VCC = 1.8V, CE1 = VIL,CE2=VIH
IOUT = 0 mA, f = fMAX
Com.
Ind.
—
—
15
20
—
—
12
15
mA
ICC2
Vcc Dynamic Operating
Supply Current
VCC = 1.8V
CE1 = VIL, CE2 = VIH,
IOUT = 0 mA, f = 1MHZ
Com.
Ind.
—
—
2.5 —
2.5 —
2.5
2.5
mA
ISB2
CMOS Standby
Current (CMOS Inputs)
VCC = Max., f = 0
CE1 ≥ VCC – 0.2V
or CE2 ≤ 0.2V,
VIN ≥ VCC – 0.2V, VIN ≤ 0.2V
Com.
Ind.
—
—
35
50
35
50
µA
—
—
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
IC62VV1008LL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-70
Symbol Parameter
Test Conditions
Min.
-100
Max. Min.
Max. Unit
ICC1
VCC Dynamic Operating
Supply Current
VCC = 1.8V, CE1 = VIL, CE2=VIH
IOUT = 0 mA, f = fMAX
Com.
Ind.
—
—
15
20
—
—
12
15
mA
ICC2
VCC Dynamic Operating
Supply Current
VCC = 1.8V
CE1 = VIL, CE2=VIH
f = 1MHZ
Com.
Ind.
—
—
2.5 —
2.5 —
2.5
2.5
mA
ISB2
CMOS Standby
Current (CMOS Inputs)
VCC = Max., f = 0
CE1 ≥ VCC – 0.2V
or CE2 ≤ 0.2V,
VIN ≥ VCC – 0.2V, VIN ≤ 0.2V
Com.
Ind.
—
—
15
25
15
25
µA
—
—
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Circuit Solution Inc.
LPSR026-0A 9/4/2002
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IC62VV1008L
IC62VV1008LL
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-70
Symbol
Parameter
Min.
Max.
-100
Min. Max.
Unit
tRC
Read Cycle Time
70
—
100
—
ns
tAA
Address Access Time
—
70
—
100
ns
tOHA
Output Hold Time
10
—
15
—
ns
tACE1
CE1 Access Time
—
70
—
100
ns
tACE2
CE2 Access Time
—
70
—
100
ns
tDOE
OE Access Time
—
35
—
50
ns
tLZOE(2) OE to Low-Z Output
5
—
5
—
ns
tHZOE(2) OE to High-Z Output
0
25
0
30
ns
tLZCE1
CE1 to Low-Z Output
10
—
10
—
ns
tLZCE2
CE2 to Low-Z Output
10
—
10
—
ns
tHZCE(2) CE1 or CE2 to Low-Z Output
0
25
0
30
ns
(2)
(2)
Notes:
1. Test conditions assume signal transition times of 5 ns or less, input pulse levels of 0.4V to 1.4V and output
loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input Reference Level
Output Reference Level
Output Load
Unit
0.4V to 1.4V
5 ns
0.9V
0.9V
See Figures 1 and 2
AC TEST LOADS
1 TTL
OUTPUT
OUTPUT
100 pF
Including
jig and
scope
Figure 1
6
1 TTL
5 pF
Including
jig and
scope
Figure 2
Integrated Circuit Solution Inc.
LPSR026-0A 9/4/2002
IC62VV1008L
IC62VV1008LL
AC TEST LOADS
READ CYCLE NO.1(1,2) (Address controlled, CE1 = OE = VIL , CE2 = VIH)
t RC
ADDRESS
t AA
t OHA
t OHA
DOUT
DATA VALID
PREVIOUS DATA VALID
AC WAVEFORMS
READ CYCLE NO. 2(1,3) (CE1, OE
OE, CE2 controlled)
tRC
ADDRESS
tAA
tOHA
OE
tHZOE
tDOE
CE1
tLZOE
tACE1/tACE2
CE2
DOUT
tLZCE1/
tLZCE2
HIGH-Z
tHZCE
DATA VALID
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH.
3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions.
Integrated Circuit Solution Inc.
LPSR026-0A 9/4/2002
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IC62VV1008L
IC62VV1008LL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range, Standard and Low Power)
Symbol
Parameter
Min.
-55
Max.
Min.
-70
Max.
-100
Min. Max
Unit
tWC
Write Cycle Time
55
—
70
—
100
—
ns
tSCE1
CE1 to Write End
50
—
65
—
80
—
ns
tSCE2
CE2 to Write End
50
—
65
—
80
—
ns
tAW
Address Setup Time to Write End
50
—
65
—
80
—
ns
tHA
Address Hold from Write End
0
—
0
—
0
—
ns
Address Setup Time
0
—
0
—
0
—
ns
tPWE
WE Pulse Width
45
—
55
—
80
—
ns
tSD
Data Setup to Write End
25
—
30
—
40
—
ns
tSA
(4)
tHD
Data Hold from Write End
0
—
0
—
0
—
ns
(3)
WE LOW to High-Z Output
—
30
—
30
—
40
ns
(3)
WE HIGH to Low-Z Output
5
—
5
—
5
—
ns
tHZWE
tLZWE
Notes:
1. Test conditions assume signal transition times of 5 ns or less, input pulse levels of 0.4V to 1.4V and output loading specified in
Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE1 LOW , CE2 HIGH and WE LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.
4. Tested with OE HIGH.
AC WAVEFORMS
WRITE CYCLE NO. 1
(WE Controlled) (1,2)
tWC
ADDRESS
tHA
tSCE1
CE1
tSCE2
CE2
tAW
tPWE
WE
tSA
DOUT
DATA UNDEFINED
tHZWE
tLZWE
HIGH-Z
tSD
DIN
8
tHD
DATA-IN VALID
Integrated Circuit Solution Inc.
LPSR026-0A 9/4/2002
IC62VV1008L
IC62VV1008LL
WRITE CYCLE NO. 2
(CE1, CE2 Controlled)(1,2)
tWC
ADDRESS
tSA
tHA
tSCE1
CE1
tSCE2
CE2
tAW
tPWE
WE
tHZWE
DOUT
DATA UNDEFINED
tLZWE
HIGH-Z
tSD
DIN
tHD
DATA-IN VALID
Notes:
1. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.
2. I/O will assume the HIGH-z state if OE =VIH.
Integrated Circuit Solution Inc.
LPSR026-0A 9/4/2002
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IC62VV1008L
IC62VV1008LL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol
Parameter
Test Condition
Min.
Max.
Unit
VDR
Vcc for Data Retention
See Data Retention Waveform
1.2
2.2
V
IDR
Data Retention Current
Vcc = 1.2V, CE1 ≥ Vcc – 0.2V
—
—
—
—
20
13
30
23
µA
µA
µA
µA
tSDR
Data Retention Setup Time
See Data Retention Waveform
0
—
ns
tRDR
Recovery Time
See Data Retention Waveform
10
—
ns
Com. (-L)
Com. (-LL)
Ind. (-L)
Ind. (-LL)
DATA RETENTION WAVEFORM (CE1 Controlled)
tSDR
Data Retention Mode
tRDR
VCC
1.65V
1.4V
VDR
CE1
GND
10
CE1 ≥ VCC - 0.2V
Integrated Circuit Solution Inc.
LPSR026-0A 9/4/2002
IC62VV1008L
IC62VV1008LL
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Industrial Range: -40°C to +85°C
Speed (ns) Order Part No.
Speed (ns) Order Part No.
Package
Package
70
IC62VV1008L-70B
8*10mm TF-BGA
70
IC62VV1008L-70BI
8*10mm TF-BGA
100
IC62VV1008L-100B
8*10mm TF-BGA
100
IC62VV1008L-100BI
8*10mm TF-BGA
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Industrial Range: -40°C to +85°C
Speed (ns) Order Part No.
Speed (ns) Order Part No.
Package
Package
70
IC62VV1008LL-70B
IC62VV1008LL-70D
8*10mm TF-BGA
know good die
70
IC62VV1008LL-70BI
IC62VV1008LL-70DI
8*10mm TF-BGA
know good die
100
IC62VV1008LL-100B 8*10mm TF-BGA
IC62VV1008LL-100D know good die
100
IC62VV1008LL-100BI 8*10mm TF-BGA
IC62VV1008LL-100DI know good die
Integrated Circuit Solution Inc.
HEADQUARTER:
NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK,
HSIN-CHU, TAIWAN, R.O.C.
TEL: 886-3-5780333
Fax: 886-3-5783000
BRANCH OFFICE:
7F, NO. 106, SEC. 1, HSIN-TAI 5TH ROAD,
HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C.
TEL: 886-2-26962140
FAX: 886-2-26962252
http://www.icsi.com.tw
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