1PMT5920B Series 3.2 Watt Plastic Surface Mount POWERMITE® Package This complete new line of 3.2 Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE package has the same thermal performance as the SMA while being 50% smaller in footprint area and delivering one of the lowest height profiles (1.1 mm) in the industry. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines and many other industrial/consumer applications. http://onsemi.com PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES 6.2 − 47 VOLTS Features • • • • • • • • • • • • • Zener Breakdown Voltage: 6.2 − 47 V DC Power Dissipation: 3.2 W with Tab 1 (Cathode) @ 75°C Low Leakage < 5 mA ESD Rating of Class 3 (> 16 kV) per Human Body Model Low Profile − Maximum Height of 1.1 mm Integral Heat Sink/Locking Tabs Full Metallic Bottom Eliminates Flux Entrapment Small Footprint − Footprint Area of 8.45 mm2 Supplied in 12 mm Tape and Reel T1 = 3,000 Units per Reel T3 = 12,000 Units per Reel Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes POWERMITE is JEDEC Registered as DO−216AA Cathode Indicated by Polarity Band Pb−Free Packages are Available Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable 1 2 1: CATHODE 2: ANODE 1 POWERMITE CASE 457 PLASTIC 2 MARKING DIAGRAM 1 CATHODE M xxB G M xxBG G 2 ANODE = Date Code = Specific Device Code (See Table on Page 2) = Pb−Free Package MOUNTING POSITION: Any MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds ORDERING INFORMATION Device 1PMT59xxBT1 Package POWERMITE 3,000/Tape&Reel 1PMT59xxBT1G POWERMITE (Pb−Free) 1PMT59xxBT3 Shipping † 3,000/Tape&Reel POWERMITE 12,000/Tape&Reel 1PMT59xxBT3G POWERMITE 12,000/Tape&Reel (Pb−Free) Individual devices are listed on page 2 of this data sheet. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 July, 2005 − Rev. 3 1 Publication Order Number: 1PMT5920B/D 1PMT5920B Series MAXIMUM RATINGS Rating Symbol Value Unit °PD° RqJA 500 4.0 248 °mW mW/°C °C/W RqJanode 35 °C/W °PD° RqJcathode 3.2 23 W °C/W TJ, Tstg −55 to +150 °C DC Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Lead (Anode) Maximum DC Power Dissipation (Note 2) Thermal Resistance from Junction−to−Tab (Cathode) Operating and Storage Temperature Range Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Mounted with recommended minimum pad size, PC board FR−4. 2. At Tab (Cathode) temperature, Ttab = 75°C ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted, VF = 1.5 V Max. @ IF = 200 mAdc for all types) Symbol I IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK VZ VR V IR VF IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA) Zener Voltage (Note 3) VZ @ IZT (Volts) IZT IR @ VR VR ZZT @ IZT (Note 4) ZZK @ IZK (Note 4) IZK Device* Device Marking Min Nom Max (mA) (mA) (V) (W) (W) (mA) 1PMT5920BT1, T3,G 1PMT5921BT1, T3,G 20B 21B 5.89 6.46 6.2 6.8 6.51 7.14 60.5 55.1 5.0 5.0 4.0 5.2 2.0 2.5 200 200 1.0 1.0 1PMT5922BT1, T3,G 1PMT5923BT1, T3,G 22B 23B 7.12 7.79 7.5 8.2 7.88 8.61 50 45.7 5.0 5.0 6.0 6.5 3.0 3.5 400 400 0.5 0.5 1PMT5924BT1, T3,G 1PMT5925BT1, T3,G 24B 25B 8.64 9.5 9.1 10 9.56 10.5 41.2 37.5 5.0 5.0 7.0 8.0 4.0 4.5 500 500 0.5 0.25 1PMT5927BT1, T3,G 1PMT5929BT1, T3,G 1PMT5930BT1, T3,G 27B 29B 30B 11.4 14.25 15.2 12 15 16 12.6 15.75 16.8 31.2 25 23.4 1.0 1.0 1.0 9.1 11.4 12.2 6.5 9.0 10 550 600 600 0.25 0.25 0.25 1PMT5931BT1, T3,G 1PMT5933BT1, T3,G 31B 33B 17.1 20.9 18 22 18.9 23.1 20.8 17 1.0 1.0 13.7 16.7 12 17.5 650 650 0.25 0.25 1PMT5934BT1, T3,G 1PMT5935BT1, T3,G 34B 35B 22.8 25.65 24 27 25.2 28.35 15.6 13.9 1.0 1.0 18.2 20.6 19 23 700 700 0.25 0.25 1PMT5936BT1, T3,G 1PMT5939BT1, T3,G 36B 39B 28.5 37.05 30 39 31.5 40.95 12.5 9.6 1.0 1.0 22.8 29.7 28 45 750 900 0.25 0.25 1PMT5941BT1, T3,G 41B 44.65 47 49.35 8.0 1.0 35.8 67 1000 0.25 3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25°C. 4. Zener Impedance Derivation ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz. * The “G” suffix indicates Pb−Free package available. http://onsemi.com 2 1PMT5920B Series 3.5 100 3 IZ, ZENER CURRENT (mA) P D , MAXIMUM POWER DISSIPATION (W) TYPICAL CHARACTERISTICS 2.5 2 TL 1.5 1 10 1 0.5 0 0.1 25 50 75 100 125 150 175 5 6 9 10 7 8 VZ, ZENER VOLTAGE (VOLTS) T, TEMPERATURE (°C) Figure 2. VZ to 10 Volts IZ , ZENER CURRENT (mA) 100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 10 20 30 40 50 60 70 80 VZ, ZENER VOLTAGE (VOLTS) 90 100 qVZ, TEMPERATURE COEFFICIENT (mV/°C) Figure 1. Steady State Power Derating 10 8 VZ @ IZT 6 4 2 0 −2 −4 2 4 200 Z Z , DYNAMIC IMPEDANCE (OHMS) qVZ, TEMPERATURE COEFFICIENT (mV/°C) 6 8 10 VZ, ZENER VOLTAGE (VOLTS) 12 Figure 4. Zener Voltage − To 12 Volts Figure 3. VZ = 12 thru 47 Volts VZ @ IZT 100 70 50 30 20 10 10 11 20 30 50 70 100 VZ, ZENER VOLTAGE (VOLTS) 200 IZ(dc) = 1mA 100 70 50 30 20 10 7 5 10 mA 20 mA 3 2 5 200 Figure 5. Zener Voltage − 14 To 47 Volts 7 iZ(rms) = 0.1 IZ(dc) 10 20 30 50 VZ, ZENER VOLTAGE (VOLTS) Figure 6. Effect of Zener Voltage http://onsemi.com 3 70 100 Z Z , DYNAMIC IMPEDANCE (OHMS) 1PMT5920B Series 1k TJ = 25°C iZ(rms) = 0.1 IZ(dc) 500 200 100 50 20 10 5 22 V 2 12 V 1 0.5 1 6.8 V 2 5 10 20 50 100 200 500 IZ, ZENER TEST CURRENT (mA) Figure 7. Effect of Zener Current C, CAPACITANCE (pF) 10,000 1000 MEASURED @ 0 V BIAS MEASURED @ 50% VR 100 10 1 10 VZ, REVERSE ZENER VOLTAGE (VOLTS) Figure 8. Capacitance versus Reverse Zener Voltage http://onsemi.com 4 100 1PMT5920B Series OUTLINE DIMENSIONS POWERMITE) CASE 457−04 ISSUE D F 0.08 (0.003) C −A− J M T B S C S S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. TERM. 1 DIM A B C D F H J K L R S −B− K TERM. 2 R L J D H −T− 0.08 (0.003) M T B S C S SOLDERING FOOTPRINT* 0.635 0.025 2.67 0.105 0.762 0.030 2.54 0.100 1.27 0.050 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS INCHES MIN MAX MIN MAX 1.75 2.05 0.069 0.081 1.75 2.18 0.069 0.086 0.85 1.15 0.033 0.045 0.40 0.69 0.016 0.027 0.70 1.00 0.028 0.039 −0.05 +0.10 −0.002 +0.004 0.10 0.25 0.004 0.010 3.60 3.90 0.142 0.154 0.50 0.80 0.020 0.031 1.20 1.50 0.047 0.059 0.50 REF 0.019 REF 1PMT5920B Series POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. 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