SUNMATE GBU25M Silicon bridge rectifier Datasheet

GBU25A-GBU25M
SILICON BRIDGE RECTIFIERS
VOLTAGE RANGE: 50 - 1000V
CURRENT: 25.0A
Features
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High Reliability
High Current Capability
Low Forward Voltage Drop
Glass Passivated Die Construction
High Surge Current Capability
Ideal for Printed Circuit Boards
GBU
.933(23.7)
.894(22.7)
Mechanical Data
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.140(3.56)
.130(3.30)
.185(4.7)
.165(4.2)
.160(4.1)
.140(3.5)
45
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 4.0 grams (approx.)
Mounting Position: Any
Marking: Type Number
.310(7.9)
.290(7.4)
0
.085(2.16)
.065(1.65)
+
+
.740(18.8)
.720(18.3)
.075(1.9)R.TYP.
_
~
.080(2.03)
.060(1.52)
~
+
.710(18)
.690(17.5)
.050(1.27)
.040(1.02)
.100(2.54)
.085(2.16)
.085(2.18)
.075(1.90)
.190(4.83)
.210(5.33)
Maximum Ratings and Electrical Characteristics
.022(.56)
.018(.46)
TA = 25C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard Tc=100
output current
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 12.5 A
Maximum reverse current
@TA =25
at rated DC blocking voltage @TA =125
Typical junction capacitance per leg (note 3)
Typical thermal resistance per leg
(note 2)
(note 1)
Operating junction temperature range
Storage temperature range
Symbol GBU25A GBU25B GBU25D GBU25G GBU25J GBU25K GBU25M Unit
VRRM
V R MS
VDC
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
IF(AV)
25.0
A
IFSM
240.0
A
1.0
V
5.0
μA
VF
IR
500.0
CJ
RθJA
RθJC
TJ
TSTG
211
21.0
2.2
- 55 ---- + 150
- 55 ---- + 150
94
mA
pF
/W
N OTE: 1. Unit case m ounted on 3.2x3.2x0.12" thick (6.2x8.2x0.3cm ) AI. Plate.
2. U nits m ounted in f ree air, no heat sink on P.C .B., 0.5x0.5"(12x12m m ) copper pads, 0.375"(9.5m m ) lead length.
3. Measured at 1.0 MH z and applied rev erse v oltage of 4.0 v olts.
1 of 2
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AVERAGE FORWARD CURRENT,
AMPERES
40
35
30
25
20
15
10
5
0
50
0
100
150
TEMPERATURE,
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT,
AMPERES
FIG.1 -- DERATING CURVE FOR OUTPUT RECTIFIED CURRENT
INSTANTANEOUS REVERSE CURRENT,
MICRO AMPERES
DURGE CURRENT
250
T J =T J max.
SINGLE SINE-WAVE
(JEDEC METHOD)
200
150
100
50
0
1
10
100
NUMBER OF CYCLES AT 60Hz
TJ =25
f=1.0 MHz
VSIG=50mVp-p
200
100
10
.1
50-400V
600-1000V
1
4
10
REVERSE VOLTAGE, VOLTS
100
10
T J =25
Pulse W idth
=300uS
1
.1
.4
.6
.8
1
1.2
1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
500
T J= 150
100
T J= 125
10
5 0 -4 0 0 V
6 0 0 -1 0 0 0 V
1 .0
0 .1
TJ=25
.0 1
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE
FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE,
JUNCTION CAPACITANCE, pF
FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER LEG
1000
100
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
2 of 2
100
/W
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.3 -- MAXIMUM NON-REPETITIVE PEAK FORWARD
1000
10
1
.1
.01
.1
1
10
100
t, HEATING TIME, sec.
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