ISC BDY55 Silicon npn power transistor Datasheet

Inchange Semiconductor
Product Specification
BDY55
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High current capability
·Fast switching speed
APPLICATIONS
·LF large signal power amplification.
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
15
A
IB
Base current
7
A
PT
Total power dissipation
117
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
1.5
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
BDY55
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ; IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=4A ;IB=0.4A
1.1
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A ;IB=3.3A
2.5
V
VBE
Base-emitter on voltage
IC=4 A; VCE=4V
1.8
V
ICEX
Collector cut-off current
VCE=100V; VBE=-1.5V
TC=150℃
5.0
30
mA
ICEO
Collector cut-off current
VCE=30V; IB=0
0.7
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
5.0
mA
hFE-1
DC current gain
IC=4A ; VCE=4V
20
hFE-2
DC current gain
IC=10A ; VCE=4V
10
Transition frequency
IC=1A ; VCE=4V;f=10MHz
10
fT
CONDITIONS
2
MIN
TYP.
MAX
60
UNIT
V
70
MHz
Inchange Semiconductor
Product Specification
BDY55
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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