Infineon BSS89 Sipmos small-signal transistor Datasheet

BSS 89
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V
Pin 1
Pin 2
G
Pin 3
D
Type
VDS
ID
RDS(on)
Package
Marking
BSS 89
240 V
0.3 A
6Ω
TO-92
SS89
Type
BSS 89
BSS 89
BSS 89
Ordering Code
Q62702-S519
Q62702-S619
Q62702-S385
S
Tape and Reel Information
E6288
E6296
E6325
Maximum Ratings
Parameter
Symbol
Drain source voltage
VDS
Drain-gate voltage
V
240
Unit
V
DGR
RGS = 20 kΩ
240
Gate source voltage
VGS
ESD Sensitivity (HBM) as per MIL-STD 883
± 20
Class 1
Continuous drain current
A
ID
TA = 25 ˚C
0.3
DC drain current, pulsed
IDpuls
TA = 25 ˚C
1.2
Power dissipation
W
Ptot
TA = 25 ˚C
Data Sheet
Values
1
1
05.99
BSS 89
Maximum Ratings
Parameter
Symbol
Values
Chip or operating temperature
Tj
-55 ... + 150
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip to ambient air 1)
RthJA
≤ 125
DIN humidity category, DIN 40 040
Unit
˚C
K/W
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C
Gate threshold voltage
240
-
-
0.8
1.5
2
V GS(th)
VGS=V DS, ID = 1 mA
Zero gate voltage drain current
V
V (BR)DSS
µA
IDSS
VDS = 240 V, VGS = 0 V, Tj = 25 ˚C
-
0.1
1
VDS = 240 V, VGS = 0 V, Tj = 125 ˚C
-
10
100
VDS = 60 V, VGS = 0 V, Tj = 25 ˚C
-
-
0.2
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
nA
IGSS
-
10
100
Ω
RDS(on)
VGS = 10 V, ID = 0.3 A
-
4.5
6
VGS = 4.5 V, ID = 0.3 A
-
5.3
10
Data Sheet
2
05.99
BSS 89
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Transconductance
S
gfs
VDS≥ 2 * ID * RDS(on)max, ID = 0.3 A
Input capacitance
0.14
-
115
155
-
15
25
-
8
12
Crss
VGS = 0 V, V DS = 25 V, f = 1 MHz
Turn-on delay time
pF
Coss
VGS = 0 V, V DS = 25 V, f = 1 MHz
Reverse transfer capacitance
-
Ciss
VGS = 0 V, V DS = 25 V, f = 1 MHz
Output capacitance
0.33
ns
td(on)
VDD = 30 V, VGS = 10 V, ID = 0.28 A
RG = 50 Ω
Rise time
-
5
8
-
10
15
-
30
40
-
20
27
tr
VDD = 30 V, VGS = 10 V, ID = 0.28 A
RG = 50 Ω
Turn-off delay time
td(off)
VDD = 30 V, VGS = 10 V, ID = 0.28 A
RG = 50 Ω
Fall time
tf
VDD = 30 V, VGS = 10 V, ID = 0.28 A
RG = 50 Ω
Data Sheet
3
05.99
BSS 89
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current
A
IS
TA = 25 ˚C
Inverse diode direct current,pulsed
0.3
-
-
1.2
V
V SD
VGS = 0 V, IF = 0.6 A
Data Sheet
-
ISM
TA = 25 ˚C
Inverse diode forward voltage
-
-
4
0.9
1.4
05.99
BSS 89
Power dissipation
Ptot = ƒ(TA)
Drain current
ID = ƒ(TA)
parameter: VGS ≥ 10 V
1.2
0.32
W
A
1.0
Ptot
ID
0.9
0.24
0.8
0.20
0.7
0.6
0.16
0.5
0.12
0.4
0.3
0.08
0.2
0.04
0.1
0.0
0.00
0
20
40
60
80
100
120
˚C
160
0
20
40
60
80
100
120
TA
˚C
160
TA
Safe operating area ID=f(VDS)
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
parameter : D = 0.01, TC=25˚C
285
V
275
V(BR)DSS270
265
260
255
250
245
240
235
230
225
220
215
-60
-20
20
60
100
˚C
160
Tj
Data Sheet
5
05.99
BSS 89
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
0.70
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 ˚C
19
Ptot = 1W
A
lkj i h g
Ω
f
0.60
ID
e
0.50
0.45
0.40
0.35
b
2.5
c
3.0
d
3.5
e
4.0
f
4.5
g
5.0
h
6.0
i
7.0
0.25
j
8.0
0.20
k
9.0
l
10.0
d
0.30
c
b
c
16
VGS [V]
a
2.0
0.55
a
RDS (on)
14
12
10
d
8
e
6
0.15
f
hg
ji
4
0.10
b
0.05
0.00
2
a
0
2
4
6
VGS [V] =
a
3.0
2.0
2.5
b
3.5
c
4.0
d
4.5
e
f
5.0 6.0
g
7.0
h
i
j
8.0 9.0 10.0
0
8
V
11
0.00
0.10
0.20
0.30
0.40
VDS
A
0.60
ID
Typ. transfer characteristics ID = f(VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs
parameter: tp = 80 µs,
VDS≥ 2 x ID x RDS(on)max
V DS≥2 x ID x RDS(on)max
1.2
0.55
S
A
ID
gfs
0.45
0.40
0.8
0.35
0.30
0.6
0.25
0.20
0.4
0.15
0.10
0.2
0.05
0.0
0.00
0
1
2
3
4
5
6
7
8
V
10
0.00
VGS
Data Sheet
0.10
0.20
0.30
0.40
A
0.55
ID
6
05.99
BSS 89
Drain-source on-resistance
RDS (on) = ƒ(Tj )
parameter: ID = 0.3 A, VGS = 10 V
Gate threshold voltage
VGS (th) = ƒ(Tj )
parameter: VGS = VDS, ID = 1 mA
15
4.6
Ω
V
13
4.0
RDS (on) 12
VGS(th)
3.6
11
3.2
10
2.8
9
8
2.4
98%
98%
7
2.0
6
typ
5
1.6
4
1.2
typ
2%
3
0.8
2
0.4
1
0
0.0
-60
-20
20
60
100
˚C
160
-60
-20
20
60
100
˚C
Tj
160
Tj
Typ. capacitances
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj , tp = 80 µs
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 3
10 1
pF
A
IF
C
Ciss
10 2
10 0
Coss
10 1
10 -1
Tj = 25 ˚C typ
Crss
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
10 0
0
5
10
15
20
25
30
V
10 -2
0.0
40
VDS
Data Sheet
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
7
05.99
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