Fairchild FQD3N50C 500v n-channel mosfet Datasheet

QFET
®
FQD3N50C / FQU3N50C
500V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
•
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
2.5A, 500V, RDS(on) = 2.5Ω @VGS = 10 V
Low gate charge ( typical 10 nC)
Low Crss ( typical 8.5pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
D
D
G
G
S
I-PAK
D-PAK
FQD Series
FQU Series
G D S
S
Absolute Maximum Ratings
Symbol
Parameter
FQD3N50C/FQU3N50C
Units
VDSS
Drain-Source Voltage
500
V
ID
Drain Current
2.5
A
1.5
A
IDM
Drain Current
10
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
200
mJ
IAR
Avalanche Current
(Note 1)
2.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
3.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
35
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
- Derate above 25°C
0.28
W/°C
-55 to +150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
Typ
Max
Units
3.5
°C/W
RθJC
Thermal Resistance, Junction-to-Case
--
RθJA
Thermal Resistance, Junction-to-Ambient*
--
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2008 Fairchild Semiconductor Corporation
FQD3N50C / FQU3N50C Rev. B
1
www.fairchildsemi.com
FQD3N50C / FQU3N50C 500V N-Channel MOSFET
March 2008
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQD3N50C
FQD3N50CTM
D-PAK
380mm
16mm
2500
FQD3N50C
FQD3N50CTF
D-PAK
380mm
16mm
2500
FQU3N50C
FQU3N50CTU
I-PAK
-
-
70
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
500
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient
ID = 250 µA, Referenced to 25°C
--
0.7
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
--
1
µA
VDS = 400 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
2.1
2.5
Ω
--
1.5
--
S
--
280
365
pF
--
50
65
pF
--
8.5
11
pF
--
10
30
ns
--
25
60
ns
--
35
80
ns
--
25
60
ns
--
10
13
nC
--
1.5
--
nC
--
5.5
--
nC
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 1.25 A
gFS
Forward Transconductance
VDS = 40 V, ID = 1.25 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
VDD = 250 V, ID = 2.5A,
RG = 25 Ω
(Note 4, 5)
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 400 V, ID = 2.5A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
2.5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
10
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 2.5 A
--
--
1.4
V
trr
Reverse Recovery Time
--
170
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 3 A,
dIF / dt = 100 A/µs
--
0.7
--
µC
(Note 4)
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 58mH, IAS =2.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.5A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2
FQD3N50C / FQU3N50C Rev. B
www.fairchildsemi.com
FQD3N50C / FQU3N50C 500V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1
10
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
1
ID, Drain Current [A]
10
ID , Drain Current [A]
Top :
0
10
-1
0
10
-55°C
2. 250µs Pulse Test
-1
10
2
1
10
25°C
0
10
Note
1. VDS = 40V
Notes :
1. 250µs Pulse Test
2. TC = 25°C
-1
10
150°C
10
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
8.0
7.0
IDR, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
7.5
6.5
VGS = 10V
6.0
5.5
5.0
4.5
4.0
VGS = 20V
3.5
3.0
2.5
Note : TJ = 25°C
2.0
0
10
150°C
25°C
Notes :
1. VGS = 0V
2. 250µs Pulse Test
-1
1.5
0
2
4
6
8
10
10
0.2
ID, Drain Current [A]
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
VGS, Gate-Source Voltage [V]
Capacitances [pF]
600
Ciss
400
Coss
200
Note ;
1. VGS = 0 V
Crss
2. f = 1 MHz
VDS = 100V
VDS = 250V
8
VDS = 400V
6
4
2
Note : ID = 3A
0
-1
10
0
0
10
0
1
10
3
FQD3N50C / FQU3N50C Rev. B
5
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
FQD3N50C / FQU3N50C 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2. ID = 250µA
2.0
1.5
1.0
Notes :
1. VGS = 10 V
0.5
2. ID = 1.5 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
TJ, Junction Temperature [°C]
Figure 9. Maximum Safe Operating Area
100
150
200
Figure 10. Maximum Drain Current
vs. Case Temperature
3
2
10
Operation in This Area
is Limited by R DS(on)
1
10
ID, Drain Current [A]
ID, Drain Current [A]
50
TJ, Junction Temperature [°C]
100 µs
1 ms
10 ms
100 ms
DC
0
10
Notes :
1. TC = 25°C
-1
10
2
1
2. TJ = 150°C
3. Single Pulse
-2
10
0
10
1
2
10
0
25
3
10
10
50
75
100
125
150
TC, Case Temperature [°C]
VDS, Drain-Source Voltage [V]
ZθJC(t), Thermal Response
Figure 11. Transient Thermal Response Curve
D = 0 .5
10
0
0 .2
N o te s :
1 . Z θ JC (t) = 3 .5 ° C /W M ax.
0 .1
2 . D uty F ac to r, D = t 1 /t 2
0 .0 5
10
3 . T JM - T C = P D M * Z θ JC (t)
0 .0 2
0 .0 1
-1
PDM
t1
sin gle p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
4
FQD3N50C / FQU3N50C Rev. B
www.fairchildsemi.com
FQD3N50C / FQU3N50C 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FQD3N50C / FQU3N50C 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
FQD3N50C / FQU3N50C Rev. B
www.fairchildsemi.com
FQD3N50C / FQU3N50C 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
FQD3N50C / FQU3N50C Rev. B
www.fairchildsemi.com
FQD3N50C / FQU3N50C 500V N-Channel MOSFET
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
7
FQD3N50C / FQU3N50C Rev. B
www.fairchildsemi.com
FQD3N50C / FQU3N50C 500V N-Channel MOSFET
Mechanical Dimensions
(Continued)
I-PAK
Dimensions in Millimeters
8
FQD3N50C / FQU3N50C Rev. B
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Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
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First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
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Rev. I34
9
FQD3N50C / FQU3N50C Rev. B
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FQD3N50C / FQU3N50C 500V N-Channel MOSFET
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