LRC LMBT918LT1G Vhf / ufh transistor npn silicon rohs requirements. Datasheet

LESHAN RADIO COMPANY, LTD.
VHF / UFH Transistor
NPN Silicon
LMBT918LT1G
z We declare that the material of product compliance with RoHS requirements.
Ordering Information
Device
Marking
Shipping
LMBT918LT1G
M3B
3000/Tape&Reel
LMBT918LT3G
M3B
10000/Tape&Reel
3
1
2
CASE 318–08, STYLE 6
MAXIMUM RATINGS
Rating
SOT–23 (TO–236AB)
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
15
Vdc
Collector–Base Voltage
V
CBO
30
Vdc
Emitter–Base Voltage
V
EBO
3.0
Vdc
50
mAdc
Collector Current — Continuous
IC
3
COLLECTOR
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
225
mW
RθJA
556
°C/W
PD
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
RθJA
TJ , Tstg
DEVICE MARKING
LMBT9181LT1G = M3B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V (BR)CEO
15
—
Vdc
V (BR)CBO
30
—
Vdc
V
3.0
—
Vdc
—
50
nAdc
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 3.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = 1.0 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current
( V CB = 15 Vdc, I E = 0)
(BR)EBO
I CBO
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LMBT918LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
hFE
20
––
––
VCE(sat)
––
0.4
Vdc
V
—
1.0
Vdc
600
—
MHz
—
—
3.0
1.7
C ibo
—
2.0
pF
NF
—
6.0
dB
P
out
30
—
mW
G pe
11
—
dB
ON CHARACTERISTICS
DC Current Gain
(I C = 3.0 mAdc, V CE = 1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
Base–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
fT
(I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz)
Output Capacitance
(V CB = 0 Vdc, I E = 0, f = 1.0 MHz)
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
Noise Figure
(I C = 1.0 mAdc, V CE = 6.0 Vdc, R S = 50 Ω, f = 60 MHz) (Figure 1)
Power Output
(I C = 8.0 mAdc, V CB = 15 Vdc, f = 500 MHz)
Common–Emitter Amplifier Power Gain
(I C = 6.0 mAdc, V CB = 12 Vdc, f = 200 MHz)
C obo
pF
V CC
V BB
EXTERNAL
100 k
1000 pF BYPASS
0.018 µF
C
0.018 µF
3
50 Ω
RF
VM
G
0.018 µF
0.018 µF
NF TEST CONDITIONS
I C = 1.0 mA
V CE = 6.0 VOLTS
R S = 50 Ω
f = 60 MHz
G pe TEST CONDITIONS
I C = 6.0 mA
V CE = 12 VOLTS
f = 200 MHz
Figure 1. NF, G pe Measurement Circuit 20–200
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LMBT918LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
A
B
C
D
G
H
J
G
C
H
D
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
DIM
B S
2
J
K
K
L
S
V
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 3/3
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