IXYS IXFH150N17T Trenchhv power mosfet hiperfet Datasheet

TrenchHVTM Power
MOSFET HiperFETTM
IXFH150N17T
VDSS
ID25
= 175V
= 150A
Ω
≤ 12mΩ
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
TO-247
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 175°C
175
V
VDGR
TJ = 25°C to 175°C, RGS = 1MΩ
175
V
VGSM
Transient
± 30
V
ID25
TC = 25°C
150
A
ILRMS
Lead Current Limit, RMS
75
A
IDM
TC = 25°C, pulse width limited by TJM
400
A
IA
TC = 25°C
75
A
EAS
TC = 25°C
1.5
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
15
V/ns
PD
TC = 25°C
830
W
-55 ... +175
°C
TJ
TJM
175
°C
Tstg
-55 ... +175
°C
300
260
°C
°C
1.13 / 10
Nm/lb.in.
6
g
TL
Tsold
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Md
Mounting torque
Weight
G
D
(TAB)
S
G = Gate
S = Source
D
= Drain
TAB = Drain
Features
z
International standard package
Avalanche rated
z
175°C Operating Temperature
z
High current handling capability
z
Advantages
z
z
z
Easy to mount
Space savings
High power density
Applications
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
z
BVDSS
VGS = 0V, ID = 250μA
175
z
VGS(th)
VDS = VGS, ID = 3mA
2.5
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
V
5.0
V
±200 nA
5
TJ = 150°C
VGS = 10V, ID = 0.5 • ID25, Notes 1
© 2008 IXYS CORPORATION, All rights reserved
μA
250
μA
10
12 mΩ
z
z
z
z
z
z
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor drives
Uninterruptible power supplies
High speed power switching
applications
Synchronous rectification
DS99895A(12/08)
IXFH150N17T
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Characteristic Values
Min. Typ.
Max.
VDS = 10V, ID = 60A, Note 1
75
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A
Qgd
TO-247 (IXFH) Outline
118
S
9800
pF
1110
pF
60
pF
22
ns
30
ns
58
ns
30
ns
155
nC
40
nC
47
nC
0.18 °C/W
RthJC
RthCH
°C/W
0.21
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
IS
VGS = 0V
150
A
ISM
Repetitive, Pulse width limited by TJM
400
A
VSD
IF = 50A, VGS = 0V, Note 1
1.2
V
trr
IF = 75A, VGS = 0V
IRM
-di/dt = 200A/μs
VR = 85V
QRM
96
ns
0.65
A
13.5
nC
1
2
∅P
3
e
Terminals: 1 - Gate
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
2 - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFH150N17T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
325
160
VGS = 10V
8V
7V
140
300
250
120
7V
225
100
ID - Amperes
ID - Amperes
VGS = 10V
8V
275
6V
80
60
200
175
150
6V
125
100
40
75
50
5V
20
5V
25
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
2
4
6
160
12
14
16
3.2
VGS = 10V
8V
7V
140
VGS = 10V
2.8
RDS(on) - Normalized
120
ID - Amperes
10
Fig. 4. RDS(on) Normalized to ID = 75A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
6V
100
80
60
40
2.4
I D = 150A
2.0
I D = 75A
1.6
1.2
5V
0.8
20
0.4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-50
5.0
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 75A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
90
4.0
VGS = 10V
3.5
15V
External Lead Current Limit
80
---70
TJ = 175ºC
3.0
ID - Amperes
RDS(on) - Normalized
8
VDS - Volts
VDS - Volts
2.5
2.0
60
50
40
30
1.5
TJ = 25ºC
20
1.0
10
0.5
0
0
40
80
120
160
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
200
240
280
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXFH150N17T
Fig. 7. Input Admittance
Fig. 8. Transconductance
160
160
140
140
120
120
g f s - Siemens
ID - Amperes
TJ = - 40ºC
100
25ºC
100
TJ = 150ºC
25ºC
- 40ºC
80
60
80
40
40
20
20
0
150ºC
60
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
20
40
VGS - Volts
100
120
140
160
120
140
160
Fig. 10. Gate Charge
300
10
270
9
240
8
210
7
180
6
VGS - Volts
IS - Amperes
80
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
150
120
TJ = 150ºC
90
60
VDS = 85V
I D = 25A
I G = 10mA
5
4
3
TJ = 25ºC
60
2
1
30
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
1.3
20
40
60
80
100
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Maximum Transient Thermal
Impedance
100,000
1.000
Ciss
10,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
1,000
Coss
0.100
0.010
100
Crss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_150N17T(8W)12-02-08-A
IXFH150N17T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
31
31
RG = 2Ω
30
30
VGS = 10V
VDS = 85V
29
29
t r - Nanoseconds
t r - Nanoseconds
32
28
27
26
25
I
24
I
23
D
D
= 75A
= 37A
TJ = 25ºC
RG = 2Ω
28
VGS = 10V
27
VDS = 85V
26
25
24
TJ = 125ºC
23
22
22
21
21
20
25
35
45
55
65
75
85
95
105
115
35
125
40
45
50
55
60
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
---
28
30
26
25
24
20
22
15
t f - Nanoseconds
35
4
5
6
7
8
9
80
I D = 37A
30
65
24
60
22
55
35
45
55
100
85
90
70
65
TJ = 25ºC
24
TJ = 25ºC
20
60
65
70
75
50
125
80
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
85
90
240
td(off) -
tf
---
220
TJ = 125ºC, VGS = 10V
VDS = 85V
200
I D = 37A
80
180
70
160
I
60
D
= 75A
140
50
120
40
100
55
30
80
50
95 100
20
60
55
115
- Nanoseconds
75
28
50
105
d(off )
TJ = 25ºC
45
95
t
90
80
40
85
110
t f - Nanoseconds
---
32
35
75
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
t d ( o f f ) - Nanoseconds
t f - Nanoseconds
td(off) -
RG = 2Ω, VGS = 10V
VDS = 85V
22
65
TJ - Degrees Centigrade
tf
26
70
26
25
95
30
75
I D = 75A
28
10
38
34
85
32
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
TJ = 125ºC
100
90
VDS = 85V
RG - Ohms
36
95
---
20
20
3
90
t d ( o f f ) - Nanoseconds
30
I D = 37A, 75A
2
85
RG = 2Ω, VGS = 10V
34
VDS = 85V
40
80
95
td(off) -
tf
36
32
TJ = 125ºC, VGS = 10V
t d ( o n ) - Nanoseconds
t r - Nanoseconds
td(on) -
75
38
34
tr
70
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
50
45
65
ID - Amperes
60
2
3
4
5
6
7
8
9
10
RG - Ohms
IXYS REF: T_150N17T(8W)12-02-08-A
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