ONSEMI NID5001N

NID5001N
Preferred Device
Self−protected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semicondutor’s latest MOSFET technology process to
achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
•
•
•
•
•
•
•
•
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VDSS
(Clamped)
RDS(ON) TYP
ID MAX
(Limited)
42 V
23 mΩ @ 10 V
33 A*
Drain
Gate
Input
Low RDS(on)
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
RG
Overvoltage
Protection
MPWR
ESD Protection
Current
Limit
Temperature
Limit
Source
MARKING
DIAGRAM
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage Internally
Clamped
VDSS
42
Vdc
Drain−to−Gate Voltage Internally Clamped
(RGS = 1.0 M)
VDGR
42
Vdc
VGS
14
Vdc
Rating
Gate−to−Source Voltage
Drain Current
Current
Sense
YWW
2
3
NID5001N = Device Code
Y
= Year
WW
= Work Week
X NID
5001N
1 = Gate
2 = Drain
3 = Source
Continuous
ID
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
PD
Thermal Resistance − Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RJC
RJA
RJA
1.95
120
80
°C/W
Single Pulse Drain−to−Source Avalanche
Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 4.5 Apk, L = 120 mH, RG = 25 )
EAS
1215
mJ
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
TJ, Tstg
−55 to
150
°C
Preferred devices are recommended choices for future use
and best overall value.
Operating and Storage Temperature
Range
Internally Limited
1
DPAK
CASE 369C
STYLE 2
W
ORDERING INFORMATION
64
1.0
1.56
Device
1. Minimum FR4 PCB, steady state.
2. Mounted onto a 2″ square FR4 board (1″ square, 2 oz. Cu 0.06″ thick
single−sided, t = steady state).
 Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 6
1
NID5001NT4
Package
Shipping†
DPAK
2500/Tape & Reel
*Max current may be limited below this value
depending on input conditions.
Publication Order Number:
NID5001N/D
NID5001N
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
42
42
46
44
50
50
Vdc
1.5
6.5
5.0
50
100
Adc
1.8
5.0
2.0
Vdc
−mV/°C
23
43
29
55
28
50
34
60
0.80
1.1
OFF CHARACTERISTICS
V(BR)DSS
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
(VGS = 0 Vdc, ID = 250 Adc, TJ = 150°C)
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
IGSSF
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.2 mAdc)
Threshold Temperature Coefficient
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 150°C)
RDS(on)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 150°C)
RDS(on)
1.0
Source−Drain Forward On Voltage
(IS = 5 A, VGS = 0 V)
m
m
VSD
V
SWITCHING CHARACTERISTICS
Turn−on
u o Time
e
s
VGS = 5.0 Vdc
VDD = 25 Vdc
ID = 1.0 Adc
E t RG = 2
5
Ext
2.5
T(on)
32
3
40
0
T(off)
68
75
VGS = 10 Vdc
VDD = 25 Vdc
ID = 1.0 Adc
Ext RG = 2.5 T(on)
11
15
5
T(off)
86
95
Slew Rate On
RL = 4.7 ,
Vin = 0 to 10 V, VDD = 12 V
−dVDS/dton
0.5
Vs
Slew−Rate Off
RL = 4.7 ,
Vin = 10 to 0 V, VDD = 12 V
dVDS/dtoff
0.35
Vs
Turn−off Time
Turn−on
u o Time
e
Turn−off Time
s
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Current Limit
(VGS = 5.0 Vdc)
VDS = 10 V (VGS = 5.0 Vdc, TJ = 150°C)
ILIM
(VGS = 10 Vdc)
VDS = 10 V (VGS = 10 Vdc, TJ = 150°C)
Temperature Limit (Turn−off)
VGS = 5.0 Vdc
Temperature Limit
(Circuit Reset)
VGS = 5.0 Vdc
Temperature Limit (Turn−off)
VGS = 10 Vdc
Temperature Limit
(Circuit Reset)
VGS = 10 Vdc
21
12
30
19
36
30
Adc
29
13
41
24
49
31
Adc
TLIM(off)
150
175
200
°C
TLIM(on)
135
160
185
°C
TLIM(off)
150
165
185
°C
TLIM(on)
135
150
170
°C
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
V
4000
400
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
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2
NID5001N
TYPICAL PERFORMANCE CURVES
ID, DRAIN CURRENT (AMPS)
VGS = 10 V to 4.2 V
28
4V
3.8 V
24
ID, DRAIN CURRENT (AMPS)
28
3.6 V
20
TJ = 25°C
3.4 V
16
3.2 V
12
3.0 V
8
2.8 V
4
2.6 V
0
1
1.5
2
2.5
3
3.5
20
TC = −55°C
16
12
8
25°C
4
4
100°C
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
2
3
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
24
0
0.5
0
0.2
ID = 5 A
TJ = 25°C
0.15
0.1
0.05
0
2
4
6
5
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
3
10
4
0.035
TJ = 25°C
0.03
VGS = 5 V
0.025
VGS = 10 V
0.02
0.015
2
3
4
5
6
7
8
9
10
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.6
100000
ID = 5 A
VGS = 10 V
VGS = 0 V
1.4
IDSS, LEAKAGE (A)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VDS ≥ 10 V
10000
1.2
1
TJ = 150°C
1000
TJ = 100°C
0.8
0.6
−50
−25
0
25
50
75
100
100
10
15
20
25
30
35
40
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
45
NID5001N
TYPICAL PERFORMANCE CURVES
100
VGS = 0 V
TJ = 25°C
0.12
I D , DRAIN CURRENT (AMPS)
IS, SOURCE CURRENT (AMPS)
0.14
0.1
0.08
0.06
0.04
VGS = 5 V
SINGLE PULSE
TC = 25°C
10
dc
1.0
0.1
0.5
0.6
0.7
0.8
0.1
0.9
100 s
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.4
10 ms
1 ms
0.02
0
0.3
Based upon a TJ = 100°C, Steady State.
1.0
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 8. Maximum Rated Forward Biased
Safe Operating Area
Figure 7. Diode Forward Voltage vs. Current
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4
100
NID5001N
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
SEATING
PLANE
−T−
V
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
C
B
3
U
K
F
J
L
H
D
G
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
2 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
T
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NID5001N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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Phone: 81−3−5773−3850
http://onsemi.com
6
For additional information, please contact your
local Sales Representative.
NID5001N/D