TSC BAS316WSRRG 200mw, high-speed switching smd diode Datasheet

BAS316WS
200mW, High-speed switching SMD Diode
Small Signal Diode
SOD-323F
Features
—Fast switching device(Trr<4.0nS)
—Surface device type mounting
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish
—Pb free version, RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Unit (mm)
Dimensions
Mechanical Data
Unit (inch)
Min
Max
—Case : Flat lead SOD-323F small outline plastic package
A
1.15
1.40
0.045 0.055
Min
Max
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
B
2.30
2.80
0.091 0.106
C
0.25
0.40
0.010 0.016
—High temperature soldering guaranteed: 260°C/10s
D
1.60
1.80
0.063 0.071
—Polarity : Indicated by cathode band
E
0.80
1.10
0.031 0.043
—Weight : 4.6±0.5 mg
F
0.05
0.15
0.002 0.006
—Marking Code : W2
Ordering Information
Pin Configuration
Part No.
Package
Packing
BAS316WS RR
SOD-323F
3Kpcs / 7" Reel
BAS316WS RRG
SOD-323F
3Kpcs / 7" Reel
Suggested PAD Layout
X1
Y(2X)
X(2X)
Dimensions
Unit (mm)
X
0.710
Maximum Ratings and Electrical Characteristics
X1
2.900
Rating at 25°C ambient temperature unless otherwise specified.
Y
0.403
Maximum Ratings
Type Number
Symbol
Value
Units
Power Dissipation
PD
200
mW
Average Forward Current
IO
250
mA
IFSM
4.0
A
TJ
150
°C
TSTG
-65 to + 150
°C
Non-Repetitive Peak Forward Surge Current
Pulse Width= 1 usec
Pulse Width= 1 msec
Operating Junction Temperature
Storage Temperature Range
1.0
Notes: 1. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts
may vary despending on application.
Version : A10
BAS316WS
200mW, High-speed switching SMD Diode
Small Signal Diode
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
I=
IF =
IF =
IF =
IF =
VR=
VR=
VR=
100 uA
1.0 mA
10 mA
50 mA
150 mA
75 V
25 V
0, f=1.0MHz
IF=IR= 10mA, Irr=0.1 x IR,
R
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Symbol
Min
Max
Units
V(BR)
100
-
0.715
0.855
1.000
1.250
1.00
0.03
1.5
4.0
V
VF
IR
-
CJ
Trr
-
V
uA
pF
ns
Tape & Reel specification
Item
Carrier depth
Sprocket hole
Reel outside diameter
TSC label
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
Symbol
K
D
A
Dimension(mm)
2.40 Max.
1.50 +0.10
178 ± 1
Reel inner diameter
D1
50 Min.
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
D2
E
F
P0
P1
T
W
W1
13.0 ± 0.5
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.10
0.6 Max.
8.30 Max.
14.4 Max.
W1
Aersion
: A10
D2
D1
Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be
within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10o within the determined cavity.
Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders.
Version : A10
BAS316WS
200mW, High-speed switching SMD Diode
Small Signal Diode
Rating and Characteristic Curves
FIG 2 Reverse Current as a function of junction
temperature.
300
100
Ta=25°C
275
250
Reverse Current (uA)
Instantaneous Forward Current (mA)
FIG 1 Typical Forward Characteristics
225
200
175
150
125
100
75
VR=75V
10
VR=75V
max
1
VR=25V
typ
0.1
50
25
typ
0
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
20
40
60
Instantaneous Forward Voltage (V)
80
100 120 140 160 180 200
o
Junction Temperature ( C)
FIG 4 Typical Junction Capacitance
FIG 3 Admissible Power Dissipation Curve
0.8
250
Junction Capacitance (pF)
Ta=25°C
Power Dissipation (mW)
200
150
100
50
0
0.6
0.4
0.2
0
0
25
50
75
100
125
Ambient Temperature (°C)
150
175
0
2
4
6
8
10
12
14
16
Reverse Voltage (V)
Version : A10
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