CYSTEKEC BTA1952E3 Low vcesat pnp epitaxial planar transistor Datasheet

CYStech Electronics Corp.
Spec. No. : C601E3-A
Issued Date : 2004.09.16
Revised Date :
Page No. : 1/4
Low Vcesat PNP Epitaxial Planar Transistor
BTA1952E3
Features
• Low VCE(sat), VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A
• Excellent DC current gain characteristics
• Wide SOA
Symbol
Outline
BTA1952E3
TO-220AB
B:Base
C:Collector
E:Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=10ms
BTA1952E3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
IB
Pd(TA=25℃)
Pd(TC=25℃)
Tj
Tstg
-100
-80
-5
-5
-8
-1
2
40
150
-55~+150
V
V
V
*1
A
A
W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C601E3-A
Issued Date : 2004.09.16
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCEO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
Min.
-80
100
120
10
Typ.
-
Max.
-10
-10
-0.6
-0.8
-1.3
-1.5
390
-
Unit
V
µA
µA
V
V
V
V
MHz
Test Conditions
IC=-10mA, IB=0
VCB=-100V, IE=0
VEB=-5V, IC=0
IC=-1A, IB=-10mA
IC=-3A, IB=-150mA
IC=-4A, IB=-200mA
IC=-3A, IB=-150mA
VCE=-3V, IC=-500mA
VCE=-2V, IC=-1A
VCE=-4V, IC=-1A, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification of hFE 2
Rank
Range
Q
120~270
R
180~390
Ordering Information
Device
BTA1952E3
BTA1952E3
Package
TO-220AB
Shipping
Tube
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C601E3-A
Issued Date : 2004.09.16
Revised Date :
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Current Gain---HFE
Saturation Voltage---(mV)
VCE=4V
VCE(SAT)@IC=10IB
100
10
1
100
1
10
100
1000
Collector Current---IC(mA)
1
10000
On Voltage vs Collector Current
10000
Power Derating Curve
10000
Power Dissipation---PD(W)
2.5
VBE(on)@VCE=4V
On Voltage---(mV)
10
100
1000
Collector Current---IC(mA)
1000
2
1.5
1
0.5
0
100
0.1
1
10
100
1000
10000
Collector Current---IC(mA)
0
50
100
150
Ambient Temperature---TA(℃)
200
Power Derating Curve
45
Power Dissipation---PD(W)
40
35
30
25
20
15
10
5
0
0
BTA1952E3
50
100
150
Case Temperature---TC(℃)
200
CYStek Product Specification
Spec. No. : C601E3-A
Issued Date : 2004.09.16
Revised Date :
Page No. : 4/4
CYStech Electronics Corp.
TO-220AB Dimension
A
Marking:
B
D
E
C
A1952
H
K
M
I
3
G
N
2
1
4
Style: Pin 1.Base 2.Collector 3.Emitter
4.Collector
O
P
3-Lead TO-220AB Plastic Package
CYStek Package Code: E3
*: Typical
Inches
Min.
Max.
0.2197 0.2949
0.3299 0.3504
0.1732
0.185
0.0453 0.0547
0.0138 0.0236
0.3803 0.4047
*0.6398
DIM
A
B
C
D
E
G
H
Millimeters
Min.
Max.
5.58
7.49
8.38
8.90
4.40
4.70
1.15
1.39
0.35
0.60
9.66
10.28
*16.25
DIM
I
K
M
N
O
P
Inches
Min.
Max.
*0.1508
0.0295 0.0374
0.0449 0.0551
*0.1000
0.5000 0.5618
0.5701 0.6248
Millimeters
Min.
Max.
*3.83
0.75
0.95
1.14
1.40
*2.54
12.70
14.27
14.48
15.87
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1952E3
CYStek Product Specification
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