IXYS IXFH14N100 Hiperfet power mosfet Datasheet

HiPerFETTM
Power MOSFETs
VDSS
ID25
RDS(on)
IXFH/IXFT/IXFX14N100 1000 V
14 A 0.75 W
IXFH/IXFT/IXFX15N100 1000 V
15 A 0.70 W
trr £ 200 ns
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
VGS
VGSM
Continuous
Transient
ID25
TC = 25°C
IDM
TC = 25°C, pulse width limited by TJM
IAR
TC = 25°C
1000
1000
V
V
±20
±30
V
V
14
15
56
60
14
15
A
A
A
A
A
A
45
mJ
5
V/ns
360
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
°C
EAR
TC = 25°C
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
PD
TC = 25°C
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
14N100
15N100
14N100
15N100
14N100
15N100
1.13/10
Weight
Nm/lb.in.
6
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 1 mA
1000
VGS(th)
VDS = VGS, ID = 4 mA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
14N100
15N100
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
g
V
4.5
V
±100
nA
250
1
mA
mA
0.75
0.70
W
W
TO-247 AD
(IXFH)
(TAB)
PLUS 247TM
(IXFX)
(TAB)
G
D
TO-268 (D3)
(IXFT)
G
S
(TAB)
Features
●
International standard packages
●
Low RDS (on) HDMOSTM process
●
Rugged polysilicon gate cell structure
●
Unclamped Inductive Switching (UIS)
rated
●
Low package inductance
- easy to drive and to protect
●
Fast intrinsic Rectifier
Applications
●
DC-DC converters
●
Battery chargers
●
Switched-mode and resonant-mode
power supplies
●
DC choppers
●
AC motor control
●
Temperature and lighting controls
Advantages
●
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247TM)
●
High power surface mountable package
●
High power density
97535B (1/99)
1-4
IXFH14N100
IXFH15N100
Symbol
Test Conditions
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
Ciss
Coss
Crss
td(on)
tr
td(off)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
6
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 W (External),
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
IXFT14N100
IXFT15N100
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
S
4500
430
150
pF
pF
pF
27
30
120
ns
ns
ns
30
ns
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
220
30
85
nC
nC
nC
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
K/W
K/W
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
0.25
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
14N100
15N100
14
15
A
A
ISM
Repetitive;
pulse width limited by TJM
14N100
15N100
56
60
A
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5
V
200
350
ns
ns
mC
mC
A
A
t rr
QRM
IRM
IF = IS
-di/dt = 100 A/ms,
VR = 100 V
TO-268AA (D3 PAK)
TJ
TJ
TJ
TJ
TJ
TJ
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
Dim.
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
L2
L3
L4
© 2000 IXYS All rights reserved
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
TO-247 AD (IXFH) Outline
10
0.35
(TO-247 Case Style)
IXFX15N100
IXFX14N100
1
2
10
15
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Dim. Millimeter
Min. Max.
Inches
Min. Max.
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
PLUS247TM (IXFX) Outline
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXFH14N100
IXFH15N100
12
5V
ID - Amperes
16
12
8
4V
8
0
0
4
8
12
16
4V
20
0
4
8
Fig.1 Output Characteristics
16
20
Fig.2 Output characteristics at elevated
temperature
2.0
2.2
VGS = 10V
1.8
TJ = 125OC
RDS(ON) - Normalized
RDS(ON) - Normalized
12
VDS - Volts
VDS - Volts
1.6
1.4
1.2
TJ = 25OC
1.0
0
3
6
9
12
2.0
1.8
ID = 15A
1.6
1.4
ID = 7.5A
1.2
1.0
25
15
VGS = 10V
50
75
ID - Amperes
Fig.4
20
12
IXF_14N100
4
-50
150
Temperature Dependence of Drain
to Source Resistance
12
IXF_15N100
8
0
125
14
ID - Amperes
16
100
TJ - Degrees C
Fig.3 RDS(on) vs. Drain Current
ID - Amperes
5V
4
4
0
VGS = 9V
8V
7V
6V
TJ = 125OC
VGS = 9V
8V
7V
6V
TJ = 25OC
0.8
IXFX15N100
IXFX14N100
16
20
ID - Amperes
IXFT14N100
IXFT15N100
10
8
6
TJ = 125oC
4
TJ = 25oC
2
-25
0
25
50
75
100 125 150
0
2.0
TC - Degrees C
Fig.5 Drain Current vs. Case Temperature
© 2000 IXYS All rights reserved
2.5
3.0
3.5
4.0
4.5
5.0
VGS - Volts
Fig.6
Input admittance
3-4
IXFH14N100
IXFH15N100
12
8
Ciss
Capacitance - pF
VGS - Volts
IXFX15N100
IXFX14N100
5000
V
Vds=300V
DS = 500V
= 7.5A
ID=30A
= 10mA
IG=10mA
10
6
4
2
0
IXFT14N100
IXFT15N100
0
40
80
120
160
200
240
2500
Coss
1000
500
Crss
250
100
280
f = 1MHz
0
5
Gate Charge - nC
10
15
20
25
30
35
40
VDS - Volts
Fig.7 Gate Charge Characteristic Curve
Fig.8
Capacitance Curves
40
ID - Amperes
32
24
TJ = 125OC
16
TJ = 25OC
8
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD - Volts
Fig.9 Source current vs Source drain voltage.
R(th)JC - K/W
1
0.1
Single pulse
0.01
10-3
10-2
10-1
100
101
Pulse Width - Seconds
Fig.10 Transient Thermal Impedance
© 2000 IXYS All rights reserved
4-4
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