SeCoS MMBT491 General purpose transistor Datasheet

MMBT491
NPN Silicon
General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low equivalent on-resistance
MARKING:
SOT-23
3 Collector
491
1
Base
2
Emitter
A
L
K
3
B S
Top View
1
V
J
2
C
G
D
H
Dim
Min
Max
A
2.800
3.040
B
1.200
1.400
C
0.890
1.110
D
0.370
0.500
G
1.780
2.040
H
0.013
0.100
J
0.085
0.177
K
0.450
0.600
L
0.890
1.020
S
2.100
2.500
V
0.450
0.600
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage temperature
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
80
60
5
1
500
150, -55~150
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Symbol
Min.
Max.
Unit
V(BR)CBO
1
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
1
hFE(2)
1
hFE(3)
1
hFE(4)
1
VCE(sat)1
1
VCE(sat)2
1
VBE(sat)
1
VBE
fT
COB
80
60
5
100
100
80
30
150
-
0.1
0.1
300
0.25
0.5
1.1
1
V
V
V
μA
μA
10
V
V
V
V
MHz
pF
Test Conditions
IC=100μA,IE=0
IC=10mA,IB=0
IE=100μA,IC=0
VCB=60V, IE=0
VEB=4V, IC=0
VCE=5V,IC=1mA
VCE=5V,IC=500mA
VCE=5V,IC=1A
VCE=5V,IC=2A
IC=500mA, IB=50mA
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=1A, VCE=5V
VCE = 10V, IC = 50mA, f = 100MHz
VCB = 10V, f = 1.0MHz, IE = 0
Note: 1. Measured under pulsed conditions, Pulse width = 300 μs, Duty cycle ≤ 2%.
http://www.SeCoSGmbH.com/
01-June-2002 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
MMBT491
NPN Silicon
General Purpose Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
0.6
0.6
+ 25 C
0.5
0.5
0.4
0.4
0.3
0.3
IC / IB = 10
IC / IB = 50
0.2
- 55 C
+ 25 C
+ 100 C
0.2
0.1
0.1
0
IC / IB = 10
1mA
10mA
100mA
1A
10A
0
10mA
1mA
100mA
1A
10A
IC - Collector Current
IC - Collector Current
V CE(sat) vs IC
VCE(sat) vs IC
400 VCE = 5 V
IC / IB = 10
1.0
300 + 100 C
200
0.8
0.6
+ 25 C
- 55 C
+ 25 C
+ 100 C
0.4
100
- 55 C
0.2
0
1mA
10mA
100mA
1A
10A
0
1mA
10mA
IC -Collector Current
1A
10A
IC -Collector Current
h FE vs IC
1.2
100mA
V BE(sat) vs IC
10
VCE = 5 V
1.0
1
0.8
0.6
- 55 C
+ 25 C
+ 100 C
0.4
0.1
0.2
0
1mA
http://www.SeCoSGmbH.com/
01-June-2002 Rev. A
10mA
100mA
1A
10A
0.01
0.1V
DC
1s
100 ms
10 ms
1 ms
100 s
1V
10V
100V
IC - Collector Current
VCE - Collector Emitter Voltage (V)
VBE(on) vs IC
Safe Operat ing Area
Any changes of specification will not be informed individually.
Page 2 of 2
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