NST3904DXV6T1, NST3904DXV6T5 Dual General Purpose Transistor The NST3904DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. • hFE, 100-300 • Low VCE(sat), ≤ 0.4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Lead-Free Solder Plating http://onsemi.com (3) (2) Q1 Q2 (4) (5) Symbol Value Unit Collector - Emitter Voltage VCEO 40 Vdc Collector - Base Voltage VCBO 60 Vdc Emitter - Base Voltage VEBO 6.0 Vdc IC 200 mAdc ESD HBM>16000, MM>2000 V Collector Current - Continuous Electrostatic Discharge 6 Total Device Dissipation TA = 25°C Symbol Max Unit PD 357 (Note 1) 2.9 (Note 1) mW RJA Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C 2 3 SOT-563 CASE 463A PLASTIC MARKING DIAGRAM MA D Derate above 25°C Thermal Resistance Junction-to-Ambient 54 1 THERMAL CHARACTERISTICS Characteristic (One Junction Heated) (6) NST3946DXV6T1 MAXIMUM RATINGS Rating (1) MA = Specific Device Code D = Date Code mW/°C °C/W 350 (Note 1) ORDERING INFORMATION Device Symbol Max Unit PD 500 (Note 1) 4.0 (Note 1) mW Derate above 25°C mW/°C Thermal Resistance Junction-to-Ambient RJA 250 (Note 1) °C/W Junction and Storage Temperature Range TJ, Tstg - 55 to +150 °C Package Shipping NST3904DXV6T1 SOT-563 4 mm pitch 4000/Tape & Reel NST3904DXV6T5 SOT-563 2 mm pitch 8000/Tape & Reel 1. FR-4 @ Minimum Pad Semiconductor Components Industries, LLC, 2003 March, 2003 - Rev. 0 1 Publication Order Number: NST3904DXV6T1/D NST3904DXV6T1, NST3904DXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 40 - 60 - 6.0 - - 50 - 50 40 70 100 60 30 300 - - 0.2 0.3 0.65 - 0.85 0.95 300 - - 4.0 - 8.0 Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector - Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO Emitter - Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) - Vdc Vdc SMALL- SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo 2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle ≤ 2.0%. http://onsemi.com 2 MHz pF pF NST3904DXV6T1, NST3904DXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre Small - Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k Ω, f = 1.0 kHz) NF Min Max 1.0 2.0 10 12 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 - 5.0 4.0 Unit kΩ X 10- 4 - mhos dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = - 0.5 Vdc) td - 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) tr - 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) ts - 200 Fall Time (IB1 = IB2 = 1.0 mAdc) tf - 50 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 < t1 < 500 s 275 t1 DUTY CYCLE = 2% 10 k +3 V 275 10 k Cs < 4 pF* < 1 ns 1N916 −9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 3 ns +10.9 V 0 −0.5 V ns Cs < 4 pF* NST3904DXV6T1, NST3904DXV6T5 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 CAPACITANCE (pF) 7.0 5.0 Cibo 3.0 Cobo 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Capacitance 500 500 IC/IB = 10 tr @ VCC = 3.0 V 50 30 20 40 V 15 V 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 300 200 IC/IB = 20 100 70 50 30 20 10 2.0 V td @ VOB = 0 V 7 5 200 5.0 7.0 10 20 30 50 70 100 Figure 4. Turn - On Time Figure 5. Rise Time IC/IB = 10 IC/IB = 10 IC/IB = 20 100 70 50 10 7 5 7 5 20 30 50 70 100 200 IC/IB = 10 30 20 10 5.0 7.0 10 VCC = 40 V IB1 = IB2 300 200 IC/IB = 20 30 20 200 500 t′s = ts − 1/8 tf IB1 = IB2 50 2.0 3.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 100 70 1.0 1.0 IC, COLLECTOR CURRENT (mA) 500 t s′ , STORAGE TIME (ns) t r, RISE TIME (ns) 100 70 VCC = 40 V IC/IB = 10 300 200 t f , FALL TIME (ns) TIME (ns) 300 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. Storage Time Figure 7. Fall Time http://onsemi.com 4 200 NST3904DXV6T1, NST3904DXV6T5 TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 f = 1.0 kHz SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 A 4 SOURCE RESISTANCE = 500 IC = 100 A 2 0 0.1 0.2 0.4 1.0 2.0 IC = 1.0 mA 12 NF, NOISE FIGURE (dB) 10 NF, NOISE FIGURE (dB) 14 SOURCE RESISTANCE = 200 IC = 1.0 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 4.0 10 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 8. Noise Figure Figure 9. Noise Figure 40 100 5.0 10 5.0 10 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 10. Current Gain hre , VOLTAGE FEEDBACK RATIO (x 10 −4) Figure 11. Output Admittance h ie , INPUT IMPEDANCE (k OHMS) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 12. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio http://onsemi.com 5 NST3904DXV6T1, NST3904DXV6T5 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 −55 °C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 70 50 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 15. Collector Saturation Region 1.0 1.2 TJ = 25°C VBE(sat) @ IC/IB =10 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 VC FOR VCE(sat) 0 −55 °C TO +25°C −0.5 −55 °C TO +25°C −1.0 +25°C TO +125°C VB FOR VBE(sat) −1.5 0.2 0 +25°C TO +125°C 0.5 COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 1.0 1.0 2.0 5.0 10 20 50 100 −2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 16. “ON” Voltages Figure 17. Temperature Coefficients http://onsemi.com 6 180 200 NST3904DXV6T1, NST3904DXV6T5 INFORMATION FOR USING THE SOT-563 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.3 0.45 1.0 1.35 0.5 0.5 Dimensions in mm SOT-563 SOT-563 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT-563 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-563 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. TJ(max) - TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150°C - 25°C 833°C/W = 150 milliwatts The 833°C/W for the SOT-563 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-563 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device http://onsemi.com 7 NST3904DXV6T1, NST3904DXV6T5 PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A-01 ISSUE O A -X- 5 6 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. C K 4 B -Y- 3 D G STYLE 1: PIN 1. 2. 3. 4. 5. 6. J 5 PL 6 0.08 (0.003) EMITTER 1 BASE 1 COLLECTOR 2 EMITTER 2 BASE 2 COLLECTOR 1 DIM A B C D G J K S S M X Y STYLE 2: PIN 1. 2. 3. 4. 5. 6. STYLE 3: PIN 1. 2. 3. 4. 5. 6. EMITTER 1 EMITTER2 BASE 2 COLLECTOR 2 BASE 1 COLLECTOR 1 CATHODE 1 CATHODE 1 ANODE/ANODE 2 CATHODE 2 CATHODE 2 ANODE/ANODE 1 STYLE 4: PIN 1. 2. 3. 4. 5. 6. MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 COLLECTOR COLLECTOR BASE EMITTER COLLECTOR COLLECTOR Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 8 NST3904DXV6T1/D