NSS30071MR6T1G 30 V, 0.7 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 30 VOLTS 0.7 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 200 mW COLLECTOR PINS 2, 5 • This is a Pb−Free Device BASE PIN 6 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO 30 V Collector−Base Voltage VCBO 40 V Emitter−Base Voltage EMITTER PIN 3 VEBO 5.0 V Collector Current IC 700 mA Base Current IB 350 mA Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance − Junction−to−Ambient (Note 1) PD PD RqJA 342 178 366 mW mW °C/W SC−74 CASE 318F STYLE 2 Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance − Junction−to−Ambient (Note 2) PD PD RqJA 665 346 188 mW mW °C/W DEVICE MARKING Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Minimum FR−4 or G−10 PCB, Operating to Steady State. 2. Mounted onto a 2″ square FR−4 Board (1″ sq 2 oz Cu 0.06″ thick single sided), Operating to Steady State. 4 6 5 1 2 3 VS3M VS3 = Specific Device Code M = Date Code ORDERING INFORMATION Device NSS30071MR6T1G Package Shipping † SC−74 10000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 June, 2005 − Rev. 0 1 Publication Order Number: NSS30071MR6/D NSS30071MR6T1G ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS V(BR)CBO Collector −Base Breakdown Voltage (IC = 100 mAdc) 40 − − Vdc V(BR)CEO Collector −Emitter Breakdown Voltage (IC = 10 mAdc) 30 − − Vdc V(BR)EBO Emitter−Base Breakdown Voltage (IE = 100 mAdc) 5.0 − − Vdc ICBO Collector Cutoff Current (VCB = 25 Vdc, IE = 0 Adc) (VCB = 25 Vdc, IE = 0 Adc, TA = 125°C) − − − − 1.0 10 mAdc IEBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0 Adc) − − 10 mAdc (VCE = 3.0 Vdc, IC = 100 mAdc) 150 − − Vdc ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) − − 0.25 Vdc VCE(sat) Collector −Emitter Saturation Voltage (IC = 700 mAdc, IB = 70 mAdc) − − 0.4 Vdc VBE(sat) Base−Emitter Saturation Voltage (IC = 700 mAdc, IB = 70 mAdc) − − 1.1 Vdc VBE(on) Collector−Emitter Saturation Voltage (IC = 700 mAdc, VCE = 1.0 Vdc) − − 1.0 Vdc http://onsemi.com 2 0.3 VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) NSS30071MR6T1G 0.7 A 0.2 0.5 A 0.1 0.1 A 10 mA 0 IC = 1.0 mA 0.000001 0.00001 0.0001 0.001 0.01 0.1 0.1 0.1 A 10 mA IC = 1.0 mA 0 0.000001 0.00001 0.0001 IB, BASE CURRENT (A) Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region VBE(sat) h FE , DC CURRENT GAIN VOLTAGE (V) 25°C 150°C 0.1 0.01 VCE(sat) −40°C 0.1 0.01 0.001 1.0 IC/IB = 10 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain Figure 4. “ON” Voltages 1.0 1.0 0.16 VBE(sat) IC/IB = 10 VCE(sat) , VOLTAGE (V) VOLTAGE (V) 0.1 1.0 VCE = 3.0 V 0.1 VCE(sat) 0.01 0.01 IB, BASE CURRENT (A) 1000 100 0.001 IC/IB = 100 0.001 0.01 0.1 1.0 T = 85°C 0.12 25°C 0°C 0.08 0.04 0 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. “ON” Voltages Figure 6. Collector−Emitter Saturation Voltage http://onsemi.com 3 1.0 NSS30071MR6T1G 0.2 IC/IB = 100 −40°C 25°C 0.15 VBE(on) , VOLTAGE (V) VCE(sat), VOLTAGE (V) 1.0 0°C T = 85°C 0.1 0.05 0.75 25°C 150°C 0.5 0.25 VCE = 1.0 V TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0 0.01 0.1 0 1.0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 7. Collector−Emitter Saturation Voltage Figure 8. VBE(on) Voltage 1.0 1.0 0.5 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 0.01 t2 DUTY CYCLE, D = t1/t2 0.01 0.0001 0.001 0.1 0.01 1.0 TIME (sec) Figure 9. Thermal Response Curve http://onsemi.com 4 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZqJA(t) = r(t) RqJA TJ(pk) − TA = P(pk) ZqJA(t) 10 100 NSS30071MR6T1G PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. A L 6 5 4 2 3 B S 1 DIM A B C D G H J K L M S D G M J C 0.05 (0.002) K H INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0649 0_ 10 _ 0.0985 0.1181 MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.65 0_ 10 _ 2.50 3.00 STYLE 2: PIN 1. NO CONNECTION 2. COLLECTOR 3. EMITTER 4. NO CONNECTION 5. COLLECTOR 6. BASE SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NSS30071MR6T1G ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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