ONSEMI MPSW51ARLRPG

MPSW51, MPSW51A
One Watt High Current
Transistors
PNP Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Symbol
MPSW51
MPSW51A
MPSW51
MPSW51A
Emitter −Base Voltage
VCEO
VCBO
Value
Unit
Vdc
−30
−40
−5.0
Vdc
Collector Current − Continuous
IC
−1000
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
W
mW/°C
TJ, Tstg
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
1
EMITTER
Vdc
−40
−50
VEBO
Operating and Storage Junction
Temperature Range
2
BASE
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
125
°C/W
Thermal Resistance, Junction−to−Case
RqJC
50
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
12
1
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
TO−92 1 WATT
(TO−226)
CASE 29−10
STYLE 1
MARKING DIAGRAM
MPS
W51x
AYWW G
G
x
= 51A Devices
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 4
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MPSW51/D
MPSW51, MPSW51A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
−30
−40
−
−
−40
−50
−
−
−5.0
−
−
−
−0.1
−0.1
−
−0.1
55
60
50
−
−
−
−
−0.7
−
−1.2
50
−
−
30
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(IC = −1.0 mAdc, IB = 0)
MPSW51
MPSW51A
Collector −Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
MPSW51
MPSW51A
Emitter −Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
(VCB = −40 Vdc, IE = 0)
MPSW51
MPSW51A
Emitter Cutoff Current
(VEB = −3.0 Vdc, IC = 0)
ICBO
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
(IC = −1000 mAdc, VCE = −1.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = −1000 mAdc, IB = −100 mAdc)
VCE(sat)
Base −Emitter On Voltage
(IC = −1000 mAdc, VCE = −1.0 Vdc)
VBE(on)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
fT
Current−Gain − Bandwidth Product
(IC = −50 mAdc, VCE = −10 Vdc, f = 20 MHz)
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
MHz
pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Package
Shipping†
MPSW51G
TO−92
(Pb−Free)
5000 Units / Bulk
MPSW51AG
TO−92
(Pb−Free)
5000 Units / Bulk
MPSW51RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
MPSW51ARLRPG
TO−92
(Pb−Free)
2000 / Ammo Pack
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MPSW51, MPSW51A
-1.0
VCE , COLLECTOR VOLTAGE (VOLTS)
h FE , CURRENT GAIN
200
100
70
VCE = -1.0 V
TJ = 25°C
50
20
-10
-20
-50
-100
-200
-500
-1000
VBE(ON) @ VCE = -1.0 V
VCE(SAT) @ IC/IB = 10
-5.0
-10
-20
-50 -100 -200
qV B, TEMPERATURE COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
-0.6
-0.4
-0.2
TJ = 25°C
0
-0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20
-50 -100
Figure 2. Collector Saturation Region
VBE(SAT) @ IC/IB = 10
0
-1.0 -2.0
IC = IC =
IC =
IC =
-100 -250 -500 mA -1000 mA
mA mA
Figure 1. DC Current Gain
-0.4
-0.2
IC =
-50 mA
IB, BASE CURRENT (mA)
TJ = 25°C
-0.6
IC =
-10 mA
IC, COLLECTOR CURRENT (mA)
-1.0
-0.8
-0.8
-500 -1000
-0.8
-1.2
-1.6
qVB for VBE
-2.0
-2.4
-2.8
-1.0 -2.0
-5.0
-10
-20
-50 -100 -200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. “ON” Voltages
Figure 4. Temperature Coefficient
http://onsemi.com
3
-500 -1000
300
160
TJ = 25°C
C, CAPACITANCE (pF)
200
VCE = -10 V
TJ = 25°C
f = 20 MHz
100
70
50
120
80
Cibo
40
Cobo
30
-10
0
-20
-50
-100
-200
-500
Cobo
Cibo
-1000
IC, COLLECTOR CURRENT (mA)
-5.0
-1.0
Figure 5. Current Gain — Bandwidth Product
-20
-10
-15
-2.0
-3.0
-4.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
-1.0 k
1.0 ms
I C , COLLECTOR CURRENT (mA)
f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
MPSW51, MPSW51A
-500
100 ms
TA = 25°C
TC = 25°C
-200
-100
1.0 ms
DUTY CYCLE ≤ 10%
MPSW51
MPSW51A
-50
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-20
-10
-1.0
-2.0
-5.0
-10
-20 -30 -40
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Active Region — Safe Operating
Area
http://onsemi.com
4
-25
-5.0
MPSW51, MPSW51A
PACKAGE DIMENSIONS
TO−92 (TO−226) 1 WATT
CASE 29−10
ISSUE O
A
B
R
STRAIGHT LEAD
BULK PACK
P
L
F
K
D
X X
G
J
H
V
C
SECTION X−X
N
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN DI­
MENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.021
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
--0.250
--0.080
0.105
--0.100
0.135
--0.135
---
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.53
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
--6.35
--2.04
2.66
--2.54
3.43
--3.43
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
A
BENT LEAD
TAPE & REEL
AMMO PACK
R
B
P
T
SEATING
PLANE
G
K
D
X X
J
V
1
C
N
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN
DIMENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
J
K
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.021
0.094
0.102
0.018
0.024
0.500
--0.080
0.105
--0.100
0.135
--0.135
---
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.53
2.40
2.80
0.46
0.61
12.70
--2.04
2.66
--2.54
3.43
--3.43
---
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MPSW51/D