Central CMLM8205 Schottky diode Datasheet

CMLM8205
Multi Discrete Module ™
SURFACE MOUNT SILICON
P-CHANNEL MOSFET AND
LOW VF SCHOTTKY DIODE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM8205 is a
Multi Discrete Module™ consisting of a single
P-Channel enhancement-mode MOSFET and a
low VF Schottky diode packaged in a space saving
SOT-563 surface mount case. This device is designed
for small signal general purpose applications where
size and operational efficiency are prime requirements.
MARKING CODE: C85
SOT-563 CASE
APPLICATIONS:
FEATURES:
• DC-DC Converters
• Battery Powered Portable Equipment
• Low rDS(on) Transistor (3.0Ω MAX @ VGS=5.0V)
• Low VF Shottky Diode (0.47V MAX @ 0.5A)
MAXIMUM RATINGS - CASE: (TA=25°C)
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
PD
PD
PD
TJ, Tstg
ΘJA
350
300
150
-65 to +150
357
UNITS
mW
mW
mW
°C
°C/W
MAXIMUM RATINGS - Q1: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
50
50
20
280
280
1.5
1.5
UNITS
V
V
V
mA
mA
A
A
MAXIMUM RATINGS - D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp≤1.0ms
Peak Forward Surge Current, tp = 8.0ms
SYMBOL
VRRM
IF
IFRM
IFSM
40
500
3.5
10
UNITS
V
mA
A
A
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IGSSF, IGSSR
VGS=20V, VDS=0
100
IDSS
VDS=50V, VGS=0
1.0
IDSS
VDS=50V, VGS=0, TJ=125°C
500
ID(ON)
VGS=10V, VDS=10V
50
BVDSS
VGS=0, ID=10μA
50
VGS(th)
VDS=VGS, ID=250μA
1.0
2.5
UNITS
nA
μA
μA
mA
V
V
Notes:
(1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
R3 (1-July 2015)
CMLM8205
Multi Discrete Module ™
SURFACE MOUNT SILICON
P-CHANNEL MOSFET AND
LOW VF SCHOTTKY DIODE
ELECTRICAL
SYMBOL
VDS(ON)
VDS(ON)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
ton, toff
ELECTRICAL
IR
IR
BVR
VF
VF
VF
VF
VF
CJ
CHARACTERISTICS - Q1 - Continued:
TEST CONDITIONS
MIN
VGS=10V, ID=500mA
VGS=5.0V, ID=50mA
VGS=0, IS=115mA
VGS=10V, ID=500mA
VGS=10V, ID=500mA, TJ=125°C
VGS=5.0V, ID=50mA
VGS=5.0V, ID=50mA, TJ=125°C
VDS =10V, ID=200mA
200
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDD=30V, VGS=10V, ID=200mA,
RG=25Ω, RL=150Ω
CHARACTERISTICS - D1: (TA=25°C)
VR=10V
VR=30V
IR=500μA
IF=100μA
IF=1.0mA
IF=10mA
IF=100mA
IF=500mA
VR=1.0V, f=1.0MHz
MAX
1.5
0.15
1.3
2.5
4.0
3.0
5.0
7.0
70
15
UNITS
V
V
V
Ω
Ω
Ω
Ω
mS
pF
pF
pF
20
ns
20
100
μA
μA
V
V
V
V
V
V
pF
40
0.13
0.21
0.27
0.35
0.47
50
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Cathode D1
4) Anode D1
5) Anode D1
6) Drain Q1
MARKING CODE: C85
R3 (1-July 2015)
w w w. c e n t r a l s e m i . c o m
CMLM8205
Multi Discrete Module ™
SURFACE MOUNT SILICON
P-CHANNEL MOSFET AND
LOW VF SCHOTTKY DIODE
SERVICES
• Bonded Inventory
• Custom Electrical Screening
• Custom Electrical Characteristic Curves
• SPICE Models
• Custom Packaging
• Package Base Options
• Custom Device Development / Multi Discrete Modules (MDM™)
• Bare Die Available for Hybrid Applications
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R3 (1-July 2015)
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