Infineon IDV04S60C 2nd generation thinq! sic schottky diode Datasheet

S iC
Silicon Carbide Diode
2 n d G e n e r a t io n t h in Q ! ™
2nd Generation thinQ!™ SiC Schottky Diode
IDV04S60C
Data Sheet
Rev. 2.0, 2010-01-08
Final
In d u s tr ia l & M u l ti m a r k e t
2nd Generation thinQ!™ SiC Schottky Diode
1
IDV04S60C
Description
The second generation of Infineon SiC Schottky diodes has emerged over the
years as the industry standard. The IDVxxS60C family is extending the already
broad portfolio with the TO220FullPAK package. In order to greatly reduce the
impact of the internal isolation of the FullPAK on the thermal performance, Infineon
is applying it´s new diffusion soldering process for attaching the chip to the
leadframe. The result of this is nearly identical thermal characteristics to that of the
SiC diodes in the non-isolated TO220 package.
Features
•
•
•
•
•
•
•
•
Revolutionary semiconductor material - Silicon Carbide
Nearly no reverse / forward recovery charge
High surge current capability
Fully isolated package with nearly similar Rth,jc as the standard T0220
Suitable for high temperature operation
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Switching behavior independent of forward current, switching speed and
temperature
Benefits
•
•
•
•
•
•
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Good thermal performance without the need for additional isolation layer and washer
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures and less fans
Reduced EMI
Applications
Fully isolated TO220 package for e.g. CCM PFC; Motor Drives; Solar Applications; UPS
Table 1
Key Performance Parameters
Parameter
Value
Unit
VDC
600
V
QC
8
nC
IF @ TC < 100°C 4
Table 2
A
Pin Definition
Pin 1
Pin2
Pin 3
C
A
n.a.
Type / Ordering Code
Package
IDV04S60C
PG-TO220 FullPAK
Marking
D04S60C
Related Links
IFX SiC Diodes Webpage
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2010-01-08
2nd Generation thinQ!™ SiC Schottky Diode
IDV04S60C
Table of Contents
Table of Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
6
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
7
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
3
Rev. 2.0, 2010-01-08
2nd Generation thinQ!™ SiC Schottky Diode
IDV04S60C
Maximum ratings
2
Maximum ratings
Table 3
Maximum ratings
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
A
TC= < 110°C
Continuous forward current
IF
-
-
4
Surge non-repetitive
IF, SM
-
-
32
TC= 25°C, tp = 10 ms
-
-
23
TC= 150°C, tp = 10 ms
TC= 25°C, tp = 10 µs
forward current, sine halfwave
Non-repetitive peak forward current
IF, max
-
-
190
i² t value
∫i²dt
-
-
4
-
A²s
TC= 25°C, tp = 10 ms
2
TC= 150°C, tp = 10 ms
Repetitive peak reverse voltage
VRRM
-
-
600
V
Tj= 25°C
Diode dv/dt ruggedness
dv/dt
-
-
50
V/ns
VR= 0...480 V
Power dissipation
Ptot
-
-
26
W
TC= 25 °C
Operating and storage temperature
Tj; Tstg
- 55
-
175
°C
-
-
50
Ncm
Mounting torque
3
Thermal characteristics
Table 4
Thermal characteristics TO-220 FullPAK
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case RthJC
-
-
5.6
Thermal resistance, junction ambient
RthJA
-
-
62
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
-
-
260
Final Data Sheet
4
M2.5 screws
Note /
Test Condition
K/W
leaded
°C
1.6 mm (0.063 in.)
from case for 10 s
Rev. 2.0, 2010-01-08
2nd Generation thinQ!™ SiC Schottky Diode
IDV04S60C
Electrical characteristics
4
Electrical characteristics
Table 5
Static characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
V
Tj= 25 °C, IR= 0.05 mA
DC blocking voltage
VDC
600
-
-
Diode forward voltage
VF
-
1.7
1.9
IF= 4 A, Tj= 25 °C
-
2
2.4
IF= 4 A, Tj= 150 °C
-
0.5
50
-
2
500
Reverse current
Table 6
IR
IR= 600 V, Tj=25 °C
µA
IR= 600 V, Tj=150 °C
AC characteristics
Parameter
Symbol
Total capacitive charge
1)
Switching time
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Qc
-
8
-
nC
VR= 400 V, F ≤I Fmax
tc
-
-
<10
ns
diF /dt =200 A/μs,
Tj=150 °C
C
-
130
-
pF
VR= 1 V, f= 1 MHz
-
20
-
VR= 300 V, f= 1 MHz
-
20
-
VR= 600 V, f= 1 MHz
1)tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and di/dt), different from
trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to absence of minority carrier injection.
Final Data Sheet
5
Rev. 2.0, 2010-01-08
2nd Generation thinQ!™ SiC Schottky Diode
IDV04S60C
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 7
Power dissipation
Diode forward current
Ptot = f(TC)
IF=f(TC); T j≤ 175 °C
Table 8
Typ. forward characteristic
IF=f(V F); tp=400 µ s; parameter: Tj
Final Data Sheet
Typ. forward characteristic in surge current
IF=f(VF); tp=400 µs; parameter: Tj
6
Rev. 2.0, 2010-01-08
2nd Generation thinQ!™ SiC Schottky Diode
IDV04S60C
Electrical characteristics diagrams
Table 9
Typ. capacitance charge vs. current slope1)
Typ. reverse current vs. reverse voltage
QD=f(diF/dt)4); Tj= 150 °C; IF ≤ IF max
I R =f(VR)
1) Only capacitive charge occuring, guaranteed by design
Table 10
Typ. transient thermal impedance
Typ. capacitance vs. reverse voltage
Zthjc=f(tp) ; parameter: D = tP / T
C=f(VR); TC=25 °C, f=1 MHz
Final Data Sheet
7
Rev. 2.0, 2010-01-08
2nd Generation thinQ!™ SiC Schottky Diode
IDV04S60C
Electrical characteristics diagrams
Table 11
Typ. C stored energy
EC=f(VR)
Final Data Sheet
8
Rev. 2.0, 2010-01-08
2nd Generation thinQ!™ SiC Schottky Diode
IDV04S60C
Package outlines
6
Package outlines
Figure 1
Outlines TO-220 FullPAK, dimensions in mm/inches
Final Data Sheet
9
Rev. 2.0, 2010-01-08
2nd Generation thinQ!™ SiC Schottky Diode
IDV04S60C
Revision History
7
Revision History
2nd Generation thinQ!™ 2nd Generation thinQ!™ SiC Schottky Diode
Revision History: 2010-01-08, Rev. 2.0
Previous Revision:
Revision
Subjects (major changes since last revision)
2.0
Release of final data sheet
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Edition 2010-01-08
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
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Final Data Sheet
10
Rev. 2.0, 2010-01-08
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