NUP3112UPMU Quad Transient Voltage Suppressor Array ESD Protection Diodes with Ultra−Low (0.7 pF) Capacitance http://onsemi.com The three−line voltage transient suppressor array is designed to protect voltage−sensitive components that require ultra−low capacitance from ESD and transient voltage events. This device features a common anode design which protects three independent high speed data lines and a VCC power line in a single six−lead UDFN low profile package. Excellent clamping capability, low capacitance, low leakage, and fast response time make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as a USB 2.0 high speed. D1 D2 D3 VCC Features • • • • • • • • Low Capacitance Data Lines (0.7 pF Typical) Protects up to Three Data Lines Plus a VCC Pin UDFN Package, 1.6 x 1.6 mm Low Profile of 0.50 mm for Ultra Slim Design ESD Rating: IEC61000−4−2: Level 4 − Contact (14 kV) VCC Pin = 15 V Protection D1, D2, and D3 Pins = 5.2 V Minimum Protection This is a Pb−Free Device MARKING DIAGRAM 1 XX M G USB 2.0 High−Speed Interface Cell Phones MP3 Players SIM Card Protection Rating = Specific Device Code = Date Code = Pb−Free Package PIN CONNECTIONS D1 1 MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol XX MG G (Note: Microdot may be in either location) Typical Applications • • • • 1 UDFN6 1.6x1.6 MU SUFFIX CASE 517AP 6 D2 2 Value Unit TJ Operating Junction Temperature Range −40 to 125 °C TSTG Storage Temperature Range −55 to 150 °C TL Lead Solder Temperature – Maximum (10 seconds) 260 °C ESD IEC 61000−4−2 Contact 14000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. GND D3 3 6 VCC 5 NC 4 NC ORDERING INFORMATION Device NUP3112UPMUTAG Package Shipping† UDFN6 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 June, 2008− Rev. 0 1 Publication Order Number: NUP3112UPMU/D NUP3112UPMU ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR IF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VBR VC VBR VRWM Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C I V IR VF IT IPP Max. Capacitance @ VR = 0 and f = 1.0 MHz Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Parameter Conditions Symbol Min Typ Max Unit − − 4.0 V Reverse Working Voltage (D1, D2, and D3) (Note 1) VRWM1 Reverse Working Voltage (V1) (Note 1) VRWM2 − − 12 V Breakdown Voltage (D1, D2, and D3) IT = 1 mA, (Note 2) VBR 5.2 5.5 − V Breakdown Voltage (VCC) IT = 5 mA, (Note 2) VBR2 13.5 15 15.8 V Reverse Leakage Current (D1, D2, and D3) @ VRWM IR − − 1.0 mA Reverse Leakage Current (VCC) @ VRWM2 IR − − 1.0 mA Capacitance (D1, D2, and D3) VR = 0 V, f = 1 MHz (Line to GND) CJ − 0.7 0.9 pF 1. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 2. VBR is measured at pulse test current IT. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 http://onsemi.com 2 NUP3112UPMU PACKAGE DIMENSIONS UDFN6, 1.6x1.6, 0.5P CASE 517AP−01 ISSUE O A B D 2X 0.10 C PIN ONE REFERENCE 2X E DETAIL A OPTIONAL CONSTRUCTION 0.10 C A (A3) DETAIL B 0.05 C A1 0.05 C SIDE VIEW DETAIL A 6X C A1 SEATING PLANE DIM A A1 A3 b D E e D2 E2 K L L1 MOLD CMPD EXPOSED Cu TOP VIEW 6X L L1 ÉÉÉ ÉÉÉ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. ÉÉÉ ÉÉÉ A3 DETAIL B OPTIONAL CONSTRUCTION SOLDERMASK DEFINED MOUNTING FOOTPRINT* D2 L 1 MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.20 0.30 1.60 BSC 1.60 BSC 0.50 BSC 1.10 1.30 0.45 0.65 0.20 −−− 0.20 0.40 0.00 0.15 1.26 3 E2 6X 6X K 6 5 6X 0.52 b e 0.10 C A B BOTTOM VIEW 0.05 C NOTE 3 0.61 1.90 1 0.50 PITCH 6X 0.32 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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