AP9926GO
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼ Low on-resistance
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G2
S2
▼ Capable of 2.5V gate drive
D2
▼ Low drive current
S2
TSSOP-8
S1
G1
S1
BVDSS
20V
RDS(ON)
28mΩ
ID
D1
4.6A
▼ Surface mount package
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2
D1
G2
G1
S1
S2
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
±8
V
3
4.6
A
3
3.7
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
20
A
PD@TA=25℃
Total Power Dissipation
1
W
Linear Derating Factor
0.008
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
125
℃/W
20071902
AP9926GO
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V, ID=4A
-
23
28
mΩ
VGS=2.5V, ID=2A
-
-
40
mΩ
0.5
-
-
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=VGS, ID=250uA
VDS=10V, ID=4.6A
-
9.7
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=20V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 8V
-
-
±100
nA
ID=4.6A
-
12.5
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
6.5
-
nC
VDS=10V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
14.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
19
-
ns
tf
Fall Time
RD=10Ω
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
355
-
pF
Coss
Output Capacitance
VDS=20V
-
190
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Min.
Typ.
VD=VG=0V,VS=1.2V
-
-
0.83
A
Tj=25℃,IS=1.25A,VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Test Conditions
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
Max. Units
AP9926GO
25
25
4.5V
4.0V
3.5V
3.0V
20
ID , Drain Current (A)
ID , Drain Current (A)
20
2.5V
15
10
2.5V
15
10
V GS =2.0V
V GS =2.0V
5
4.5V
4.0V
3.5V
3.0V
5
T C =150 o C
T C =25 o C
0
0
0
0.5
1
1.5
2
2.5
0
3
0.5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.5
2
2.5
3
Fig 2. Typical Output Characteristics
45
1.8
I D = 4A
I D = 4A
T C =25 o C
V GS =4.5V
1.6
Normalized R DS(ON)
40
RDS(ON) (mΩ )
1
V DS , Drain-to-Source Voltage (V)
35
30
1.4
1.2
1.0
25
0.8
0.6
20
1
2
3
4
5
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
6
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
6
1.2
5
1
4
0.8
PD (W)
ID , Drain Current (A)
AP9926GO
3
0.6
2
0.4
1
0.2
0
0
25
50
75
100
125
150
0
50
100
150
T c , Case Temperature ( o C)
o
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Normalized Thermal Response (R thja)
Duty Factor = 0.5
100us
10
ID (A)
1ms
1
10ms
100ms
0.1
1s
T C =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
Rthja=208 oC/W
DC
0.001
0.01
0.1
1
10
V DS (V)
Fig 7. Maximum Safe Operating Area
100
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
AP9926GO
f=1.0MHz
1000
12
I D =4.6A
VGS , Gate to Source Voltage (V)
10
Ciss
V DS =10V
V DS =15V
8
Coss
C (pF)
V DS =20V
6
100
Crss
4
2
10
0
0
5
10
15
20
1
25
5
9
13
17
21
25
29
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
1.6
100
1.4
10
1.2
T j =150 o C
VGS(th) (V)
IS (A)
T j =25 o C
1
1
0.8
0.6
0.1
0.4
0.2
0.01
0
0.4
0.8
1.2
1.6
-50
0
50
100
Junction Temperature ( o C )
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9926GO
VDS
90%
RD
VDS
D
0.5x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
+
10%
VGS
S
5v
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
5V
RATED VDS
G
S
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q