WINNERJOIN BC237C Transistor (npn) Datasheet

RoHS
BC237/238/239
BC237/238/239
TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
0.35
W (Tamb=25℃)
1. COLLECTOR
Collector current
ICM:
Collector-base voltage
V(BR)CBO:
0.1
A
2. BASE
3. EMITTER
BC237
50V
BC238/239
30V
Operating and storage junction temperature range
IC
TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
C
E
L
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
IEBO
E
O
Test
conditions
Ic=100µA, IE=0
Ic=2mA, IB=0
BC237
BC238/239
BC237
BC238/239
IE=100µA, IC=0
BC237
BC238/239
VCB=50V, IE=0
BC237
VCB=30V, IE=0
BC238/239
VCE=5V, IC=10µA
V
6
5
V
BC237B/238B
BC237C/238C/239C
VCE=5V, IC=100m A
120
120
120
200
380
170
290
500
BC237A
120
BC237B/238B
180
BC237C/238C/239C
300
hFE(3)
IC=10mA, IB=0.5mA BC237/238/239
IC=100mA, IB=5mA
BC237/239
BC238
Http:// www.wej.cn
15
nA
15
nA
90
270
BC239
WEJ ELECTRONIC CO.
45
25
BC237C/238C/239C
BC237A
UNIT
V
BC237A
BC237
MAX
50
30
150
hFE(2)
VCE(sat)
TYP
BC237B/238B
VCE=5V, IC=2mA
W
MIN
VEB=5V, IC=0
hFE(1)
DC current gain
Collector-emitter saturation voltage
N
C
O
1 2 3
unless otherwise specified)
R
T
Collector-base breakdown voltage
J
E
D
T
,. L
TO-92
800
800
220
460
800
0.2
0.6
0.8
E-mail:[email protected]
V
RoHS
Base-emitter saturation voltage
VBE(sat)
IC=10mA, IB=0.5mA
Base-emitter voltage
0.5
VCE=5V, IC=2mA
VBE
0.55
VCE=5V, IC=100mA
100
120
140
BC238
BC239
Transition frequency
fT
VCE=5V,IC=10mA,f=100MHz BC237
BC238
BC239
IC
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
Emitter-base capacitance
Cib
VEB=0.5V, IC=0, f=1MHz
N
VCE=5V, Ic=0.2mA,
f=1kHZ, Rs=2KΩ
Noise figure
NF
O
BC239
C
150
150
150
O
200
240
0.7
V
MHz
280
4.5
8
2
R
T
4
dB
BC238
BC239
2
2
2
10
10
4
C
E
L
E
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
pF
Pf
VCE=5V, Ic=0.2mA,
f=1kHZ, Rs=2KΩ, ∆f=200Hz BC237
J
E
0.62
0.83
VCE=3V,IC=0.5mA,f=100MHz BC237
V
D
T
,. L
IC=100mA,IB=5mA
VCE=5V, IC=0.1mA
0.83
1.05
E-mail:[email protected]
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