Rectron BZM55C47 Surface mount zener diode voltage range 2.4 to 47 volts power rating 500 mwatt Datasheet

BZM55C2V4
-BZM55C47
SURFACE MOUNT ZENER DIODE
VOLTAGE RANGE 2.4 to 47 Volts POWER RATING 500 mWatts
FEATURES
* Saving space
* Hermetic sealed parts
* Electrical data identical with the devices BZT55 Series /
TZM Series
* Fits onto SOD323/SOD110footprints
* Very sharp reverse characteristic
* Very high stability
* Low noise
* Available with tighter tolerances
* Low reverse current level
* Lead (Pb)-free component
* Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
.049 (1.25)
.047 (1.20)
Micro-MELF
MECHANICAL DATA
* Case: MicroMELF
* Weight: approx. 12mg
.010 (0.25)
.006 (0.15)
<
.0
61
(1
.5
6)
.079 (2.00)
.071 (1.80)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified.
<.043 ( 1.10)
Dimensions in inches and (millimeters)
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
VALUE
UNITS
PV
500
mW
Terminal resistance (Mounted on epoxy-glass hard tissue,Fig.1)
RqJA
500
K/W
Terminal resistance (35um copper clad,0.9mm2 copper area per electrode)
RqJL
300
K/W
TJ
175
o
C
-65 to +175
o
C
Power Dissipation @RqJA<300 K/W
Max. Operating Temperature Range
Storage Temperature Range
TSTG
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Forward Voltage at IF= 200mA
SYMBOL
MIN.
TYP.
MAX.
UNITS
VF
-
-
1.5
Volts
2007-3
ELECTRICAL CHARACTERISTICS
Zener Voltage
Range1)
rzjT at
IZT,
f = 1kHz
VZ at IZT
Partnumber
Dynamic
Resistance
rzjK at
IZK,
f = 1kHz
V
(@TA=25 C unless otherwise specified)
O
Test
Current
Temperature
Coefficient
IZT
TKVZ
mA
Test
Current Reverse Leakage Current
%/K
min
IZK
IR
IR
at Tamb at Tamb
= 25 °C = 150 °C
at VR
mA
µA
V
min
max
max
BZM55C2V4
2.28
2.56
< 85
< 600
5
- 0.09
- 0.06
1
< 50
< 100
1
BZM55C2V7
2.5
2.9
< 85
< 600
5
- 0.09
- 0.06
1
< 10
< 50
1
BZM55C3V0
2.8
3.2
< 90
< 600
5
- 0.08
- 0.05
1
<4
< 40
1
BZM55C3V3
3.1
3.5
< 90
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
BZM55C3V6
3.4
3.8
< 90
< 600
5
-0.08
- 0.05
1
<2
< 40
1
BZM55C3V9
3.7
4.1
< 90
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
BZM55C4V3
4
4.6
< 90
< 600
5
- 0.06
- 0.03
1
<1
< 20
1
BZM55C4V7
4.4
5
< 80
< 600
5
- 0.05
0.02
1
< 0.5
< 10
1
BZM55C5V1
4.8
5.4
< 60
< 550
5
- 0.02
0.02
1
< 0.1
<2
1
BZM55C5V6
5.2
6
< 40
< 450
5
- 0.05
0.05
1
< 0.1
<2
1
BZM55C6V2
5.8
6.6
< 10
< 200
5
0.03
0.06
1
< 0.1
<2
2
BZM55C6V8
6.4
7.2
<8
< 150
5
0.03
0.07
1
< 0.1
<2
3
BZM55C7V5
7
7.9
<7
< 50
5
0.03
0.07
1
< 0.1
<2
5
BZM55C8V2
7.7
8.7
<7
< 50
5
0.03
0.08
1
< 0.1
<2
6.2
BZM55C9V1 *
8.5
9.6
< 10
< 50
5
0.03
0.09
1
< 0.1
<2
6.8
BZM55C10 *
9.4
10.6
< 15
< 70
5
0.03
0.1
1
< 0.1
<2
7.5
BZM55C11 *
10.4
11.6
< 20
< 70
5
0.03
0.11
1
< 0.1
<2
8.2
BZM55C12 *
11.4
12.7
< 20
< 90
5
0.03
0.11
1
< 0.1
<2
9.1
BZM55C13 *
12.4
14.1
< 26
< 110
5
0.03
0.11
1
< 0.1
<2
10
BZM55C15 *
13.8
15.6
< 30
< 110
5
0.03
0.11
1
< 0.1
<2
11
BZM55C16 *
15.3
17.1
< 40
< 170
5
0.03
0.11
1
< 0.1
<2
12
BZM55C18 *
16.8
19.1
< 50
< 170
5
0.03
0.11
1
< 0.1
<2
13
BZM55C20 *
18.8
21.2
< 55
< 220
5
0.03
0.11
1
< 0.1
<2
15
BZM55C22 *
20.8
23.3
< 55
< 220
5
0.04
0.12
1
< 0.1
<2
16
BZM55C24 *
22.8
25.6
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
18
BZM55C27 *
25.1
28.9
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
20
BZM55C30 *
28
32
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
22
BZM55C33 *
31
35
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
24
BZM55C36 *
34
38
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
27
BZM55C39 *
37
41
< 90
< 500
2.5
0.04
0.12
0.5
< 0.1
<5
30
BZM55C43 *
40
46
< 90
< 600
2.5
0.04
0.12
0.5
< 0.1
<5
33
BZM55C47 *
44
50
110
< 700
2.5
0.04
0.12
0.5
< 0.1
<5
36
1)
tp < 10 ms, T/t p > 1000
*)
Additionnal measurement of Voltage group 9V1 to 47 at 95 % Vzmin <35 nA at T j 25 °C
200
600
500
CD, Diode Capacitance (pF)
Ptot, TOTAL POWER DISSIPATION (mW)
RATING AND CHARACTERISTICS CURVES ( BZM55C2V4-BZM55C47 )
400
300
200
100
0
0
100
VR=2V
TJ=25OC
150
100
50
0
200
0
5
O
TA, AMBIENT TEMPERATURE( C)
Figure1 Total Power Dissipation vs.
Ambient Temperature
VZtn,REVERSE VOLTAGE CHANGE (pF)
IZ=5mA
10
0
TKVZ, TEMPERATURE COEFFICIENT OF VZ (10-4/K)
TJ=25OC
100
0
5
10
15
20
15
20
25
Figure2 Diode Capacitance vs. Zener Voltage
25
1.3
VZtn =VZt/VZ (25OC)
1.2
TKVZ =10 X 10-4/K
8
6
4
2
X 10-4/K
X 10-4/K
X 10-4/K
X 10-4/K
0
-2 X 10-4/K
-4 X 10-4/K
1.1
1.0
0.9
0.8
-60
0
60
120
180
240
VZ, ZENER VOLTAGE(V)
Tj, JUNCTION TEMPERATURE (OC)
Figure3 Typical Change of Working Voltage under
Operating Conditions at TA=25OC
Figure4 Typical Change of Working Voltage vs.
Junction Temperature
15
100
IF, FORWARD CURRENT (mA)
VZ, VOLTAGE CHANGE (mV)
1000
10
VZ, ZENER VOLTAGE(V)
10
5
IZ=5mA
0
-5
0
10
20
30
VZ, ZENER VOLTAGE(V)
40
Figure5 Temperature Coefficient of VZ vs.
Zener Voltage
50
10
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (V)
Figure6 Forward Current vs. Forward Voltage
RATING AND CHARACTERISTICS CURVES ( BZM55C2V4-BZM55C47 )
50
Ptot=500mW
80
IZ, ZENER CURRENT (mA)
IZ, ZENER CURRENT (mA)
100
TA=25OC
60
40
20
0
4
6
8
12
30
20
10
0
20
TA=25OC
15
20
25
30
35
VZ, ZENER VOLTAGE (V)
VZ, ZENER VOLTAGE (V)
Figure7 Zener Current vs. Zener Voltage
Figure8 Zener Current vs. Zener Voltage
RZ, DIFFERENTIAL ZENER RESISTANCE (W)
0
Ptot=500mW
40
1000
IZ=1mA
100
5mA
10 10mA
1
TJ=25OC
0
5
10
15
20
25
VZ, ZENER VOLTAGE (V)
Zthp, Thermal Resistance for Pulse Cond (K/W)
Figure9 Differential Zener Resistance vs. Zener Voltage
1000
tP/T = 0.5
100
RqJA = 300K/W
tP/T = 0.2
T=Tjmax.- TA
Single Pulse
10
tP/T = 0.01
tP/T = 0.1
tP/T = 0.02
2
tP/T = 0.05
1
10-1
iZM = (-VZ+(VZ +4rzj X T/Zthp)
100
101
tp, PULSE LENGTH (mS)
Figure10 Thermal Response
102
1/2
) / (2rzj)
103
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specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
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