HP ATF-13786 Surface mount gallium arsenide fet for oscillator Datasheet

Surface Mount Gallium
Arsenide FET for Oscillators
Technical Data
ATF-13786
Description
• Low Cost Surface Mount
Plastic Package
• High fMAX: 60 GHz Typical
• Low Phase Noise at 10 GHz:
-110 dBc/Hz @ 100 kHz Typical
• Output Power at 10 GHz:
up to 10 dBm
• Tape-and-Reel Packaging
Option Available
Hewlett-Packard’s ATF-13786 is a
low cost Gallium Arsenide
Schottky barrier-gate field effect
transistor housed in a surface
mount plastic package. This
device is designed for use in low
cost, surface mount oscillators
operating over the RF and
microwave frequency ranges. The
ATF-13786 has sufficient gain for
easy use as a negative R cell,
without excess gain that can lead
to unwanted oscillations and
mode jumping. The gate structure
used in the fabrication of this
device results in phase noise
performance superior to that of
most other MESFETs. These
features make this device
particularly well suited for low
power (< +10 dBm) commercial
oscillator applications such as are
encountered in DBS, TVRO, and
MMDS television receivers, or
hand-held transceivers operating
in the 900 MHz, 2.4 GHz, and
5.7␣ GHz ISM bands.
25
GAIN (dB)
20
MSG
15
MAG
S 21
10
MSG
5
0
1
5
10
FREQUENCY (GHz)
Insertion Power Gain, Maximum
Available Gain, and Maximum Stable
Gain vs. Frequency.
VDS = 3 V, IDS = 40 mA.
20
5-43
85 mil Plastic Surface
Mount Package
Pin Configuration
4
GATE
SOURCE
DRAIN
137
Features
3
1
2
SOURCE
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
5965-8721E
ATF-13786 Absolute Maximum Ratings
Symbol
Parameter
Units
Absolute Maximum[1]
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
V
4
-4
VGD
IDS
PT
TCH
TSTG
Gate-Drain Voltage
Drain Current
Power Dissipation[2,3]
Channel Temperature
Storage Temperature
V
mA
mW
°C
°C
-6
Thermal Resistance[2]:
IDSS
225
150
-65 to +150
Notes:
1. Operation of this device above
any one of these conditions
may cause permanent damage.
2. TCASE = 25oC (TCASE is defined
to be the temperature at the
ends of pins 2 and 4 where
they contact the circuit
board).
3. Derate at 3.1 mW/oC for
TC␣ >␣ 60 oC.
θjc = 325°C/W
ATF-13786 Electrical Specifications, TC = 25°C, VDS = 3 V, IDS = 40 mA[4]
(unless noted)
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
|S21|2
Insertion Power Gain
f = 10 GHz
dB
P1 dB
Power at 1 dB Gain Compression
f = 10 GHz
dBm
15
16.5
G1 dB
1 dB Compressed Gain
f = 10 GHz
dB
6.5
7.5
PN
Phase Noise (100 kHz offset)[5]
f = 10 GHz
dBc/Hz
gm
Transconductance
VDS = 3 V, VGS = 0 V
mS
25
55
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
mA
50
70
100
VDS = 3 V, IDS = 1 mA
V
-2.0
-1.5
-0.5
IDG = 0.1 mA
V
6.5
7
VP
VBDG
Pinchoff Voltage
Gate - Drain Breakdown Voltage
6.0
-110
Notes:
4. Recommended maximum bias conditions for use as an oscillator.
5. The superior phase noise of this product results from the use of a gate structure optimized for noise performance.
Typical performance of 10 GHz parallel resonated, lightly coupled oscillator using high Q dielectric resonator.
5-44
Typical Scattering Parameters, Common Source, Z O = 50 Ω, VDS = 3 V, IDS = 40 mA
S21
S11
S12
S22
Frequency
GHz
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.97
0.88
0.78
0.67
0.57
0.52
0.53
0.57
0.60
0.63
0.64
0.67
0.72
0.76
0.78
0.77
0.74
0.73
-23
-46
-68
-95
-125
-157
176
160
143
130
117
107
99
97
90
83
77
69
4.80
4.60
4.35
4.02
3.61
3.20
2.84
2.54
2.27
2.04
1.82
1.65
1.55
1.47
1.40
1.32
1.26
1.23
157
135
117
95
75
57
41
31
16
4
-9
-19
-29
-35
-46
-58
-68
-80
0.03
0.06
0.08
0.11
0.12
0.13
0.14
0.14
0.14
0.15
0.14
0.14
0.14
0.14
0.14
0.14
0.14
0.14
77
66
58
47
37
28
21
18
12
6
0
-4
-8
-9
-14
-20
-28
-36
0.46
0.42
0.36
0.28
0.19
0.12
0.08
0.10
0.15
0.19
0.25
0.30
0.35
0.39
0.41
0.42
0.43
0.42
-13
-25
-35
-48
-65
-93
-147
171
148
134
122
113
109
111
108
104
98
93
85 mil Plastic Surface Mount
Package Dimensions
Part Number Ordering Information
0.51 ± 0.13
(0.020 ± 0.005)
4
Part Number
Devices per Reel
Reel Size
ATF-13786-TR1
ATF-13786-STR
1000
10
7''
strip
45°
1
137
Please refer to the “Tape-and-Reel Packaging for Surface Mount
Semiconductors” data sheet for more detailed information.
C
L
3
2.34 ± 0.38
(0.092 ± 0.015)
2
1.52 ± 0.25
(0.060 ± 0.010)
2.67 ± 0.38
(0.105 ± 0.15)
5° TYP.
0.66 ± 0.013
(0.026 ± 0.005)
0.203 ± 0.051
(0.006 ± 0.002)
8° MAX
0° MIN
2.16 ± 0.13
(0.085 ± 0.005)
0.30 MIN
(0.012 MIN)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
5-45
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