MSD2714AT1 Preferred Device VHF/UHF Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C 2 BASE 1 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, TA = 25°C Derate above 25°C PD (Note 1) RqJA PD (Note 2) Thermal Resistance, Junction−to−Ambient RqJA 625 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 3 2 1 SC−59 CASE 318D STYLE 1 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 X 0.75 X 0.062 in. 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina 14A M G G 1 14A = Specific Device Code M = Date Code* G =Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location ORDERING INFORMATION Device MSD2714AT1 MSD2714AT1G Package Shipping † SC−59 3000 / Tape & Reel SC−59 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 2 1 Publication Order Number: MSD2714AT1/D MSD2714AT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 25 − − 30 − − 3.0 − − − − 500 − − 500 90 − 180 − − 0.95 fT 650 − − MHz Collector−Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccb − − 0.7 pF Common−Base Feedback Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Crb − − 0.65 pF rb′Cc − − 9.0 ps OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 35 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 3.5 Vdc, IC = 0) IEBO Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 6.0 Vdc) hFE Base −Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) VBE − Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector Base Time Constant (IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) TYPICAL CHARACTERISTICS COMMON−BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C) yib, INPUT ADMITTANCE 0 70 gib −10 60 50 jb ib (mmhos) y ib , INPUT ADMITTANCE (mmhos) 80 −b ib 40 30 −20 1000 MHz −30 700 −40 20 400 10 0 200 −50 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 −60 0 Figure 1. Rectangular Form 10 20 30 40 50 gib (mmhos) Figure 2. Polar Form http://onsemi.com 2 60 100 70 80 MSD2714AT1 yfb, FORWARD TRANSFER ADMITTANCE 70 60 bfb 60 400 200 50 50 600 100 40 700 −g fb 30 jb fb (mmhos) y ib , FORWARD TRANSFER ADMITTANCE (mmhos) TYPICAL CHARACTERISTICS 20 10 40 30 1000 MHz 0 −10 20 −20 −30 100 200 300 400 500 f, FREQUENCY (MHz) 10 1000 700 70 60 50 Figure 3. Rectangular Form 40 30 20 10 gfb (mmhos) 0 −10 −20 −30 1.2 1.6 2.0 Figure 4. Polar Form yrb, REVERSE TRANSFER ADMITTANCE 5.0 0 4.0 −1.0 200 −2.0 400 100 MPS H11 jb rb (mmhos) y rb , REVERSE TRANSFER ADMITTANCE (mmhos) COMMON−BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C) 3.0 −brb −brb 2.0 −3.0 700 MPS H10 1.0 −4.0 −grb 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 −5.0 −2.0 −1.8 −1.2 −0.8 1000 Figure 5. Rectangular Form 1000 MHz −0.4 0 0.4 grb (mmhos) 0.8 Figure 6. Polar Form yob, OUTPUT ADMITTANCE 10 1000 MHz 9.0 8.0 8.0 7.0 700 6.0 5.0 jb ob(mmhos) yob, OUTPUT ADMITTANCE (mmhos) 10 bob 4.0 6.0 4.0 400 3.0 200 2.0 gob 1.0 0 2.0 100 200 300 400 500 f, FREQUENCY (MHz) 100 700 0 1000 0 Figure 7. Rectangular Form 2.0 4.0 6.0 gob (mmhos) Figure 8. Polar Form http://onsemi.com 3 8.0 10 MSD2714AT1 PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. D 3 HE 2 DIM A A1 b c D E e L HE E 1 b e MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR C A MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 L A1 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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