Fairchild FQU13N10L N-channel qfet mosfet Datasheet

FQD13N10L / FQU13N10L
N-Channel QFET® MOSFET
100 V, 10 A, 180 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
• 10 A, 60 V, RDS(on) = 180 mΩ (Max) @VGS = 10 V,
ID = 5.0 A
• Low Gate Charge (Typ. 8.7 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• Low level gate drive requirements allowing direct
operation form logic drivers
D
D
!
"
G
G!
S
D-PAK
(TO252)
G D S
Absolute Maximum Ratings
Symbol
VDSS
ID
I-PAK
(TO251)
! "
"
"
!
S
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQD13N10L / FQU13N10L
100
- Continuous (TC = 100°C)
Unit
V
10
A
6.3
A
40
A
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
10
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
4.0
6.0
2.5
mJ
V/ns
W
40
0.32
-55 to +150
W
W/°C
°C
300
°C
FQD13N10L / FQU13N10L
Unit
°C/W
dv/dt
PD
- Pulsed
(Note 1)
(Note 3)
Power Dissipation (TC = 25°C)
TJ, TSTG
TL
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
± 20
V
95
mJ
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
RθJA
Thermal Resistance, Junction-to-Ambient, Max. *
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
110
°C/W
3.13
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
www.fairchildsemi.com
FQD13N10L / FQU13N10L N-Channel QFET® MOSFET
July 2013
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
100
--
--
V
--
0.09
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
VDS = 100 V, VGS = 0 V
--
--
1
µA
VDS = 80 V, TC = 125°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1.0
--
2.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5.0 A
VGS = 5 V, ID = 5.0 A
--
0.142
0.158
0.18
0.2
Ω
gFS
Forward Transconductance
VDS = 30 V, ID = 5.0 A
--
8.7
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
400
520
pF
--
95
125
pF
--
20
25
pF
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 50 V, ID = 12.8 A,
RG = 25 Ω
(Note 4)
VDS = 80 V, ID = 12.8 A,
VGS = 5 V
(Note 4)
--
7.5
25
ns
--
220
450
ns
--
22
55
ns
--
72
150
ns
--
8.7
12
nC
--
2.0
--
nC
--
5.3
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
10
A
ISM
--
--
40
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 10 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
--
75
--
ns
Qrr
Reverse Recovery Charge
--
0.17
--
µC
VGS = 0 V, IS = 12.8 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.43mH, IAS = 10A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 12.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
www.fairchildsemi.com
FQD13N10L / FQU13N10L N-Channel QFET® MOSFET
Electrical Characteristics
VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
Top :
ID, Drain Current [A]
1
10
ID , Drain Current [A]
1
10
150℃
0
10
25℃
-55℃
※ Notes :
1. VDS = 30V
2. 250μs Pulse Test
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
0
10
-1
-1
0
10
10
1
10
0
10
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.8
1
10
VGS = 5V
0.4
IDR , Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
0.6
VGS = 10V
0.2
150℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
25℃
※ Note : TJ = 25℃
-1
0.0
0
10
20
30
10
40
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
800
VDS = 50V
600
Ciss
400
Coss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
200
VGS, Gate-Source Voltage [V]
Capacitance [pF]
0
10
8
VDS = 80V
6
4
2
※ Note : ID = 12.8A
0
-1
10
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
0
4
8
12
16
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
FQD13N10L / FQU13N10L N-Channel QFET® MOSFET
Typical Characteristics
(Continued)
2.5
2.0
1.1
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
1.2
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
-100
0
-50
50
100
150
1.5
1.0
0.5
※ Notes :
1. VGS = 10 V
2. ID = 5.0 A
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
10
Operation in This Area
is Limited by R DS(on)
2
8
100 µs
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms
1
10
10 ms
DC
0
10
※ Notes :
6
4
2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
( t) , T h e r m a l R e s p o n s e
Figure 9. Maximum Safe Operating Area
100
125
150
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
0
※ N o te s :
1 . Z θ J C ( t) = 3 .1 3 ℃ / W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .2
0 .1
0 .0 5
10
PDM
0 .0 2
-1
0 .0 1
t1
s i n g le p u ls e
Z
θ JC
75
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
10
-5
10
-4
t2
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
www.fairchildsemi.com
FQD13N10L / FQU13N10L N-Channel QFET® MOSFET
Typical Characteristics
FQD13N10L / FQU13N10L N-Channel QFET® MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
5V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
5V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
ID (t)
VDS (t)
VDD
tp
Time
www.fairchildsemi.com
FQD13N10L / FQU13N10L N-Channel QFET® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
www.fairchildsemi.com
FQD13N10L / FQU13N10L N-Channel QFET® MOSFET
Package Dimensions
D-PAK
TO-252
(DPAK) 3LEAD,
MOLDED,
3LEAD,
OPTION AA
TO-252 (DPAK),
MOLDED,
OPTION
AA&AB
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notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most
recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein,
which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT25 2-003
Dimensions in Millimeters
©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
www.fairchildsemi.com
FQD13N10L / FQU13N10L N-Channel QFET® MOSFET
Package Dimensions
(Continued)
I-PAK
TO-251 (IPAK) MOLDED, 3LEAD, OPTION AA
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without
notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most
recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein,
which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT25 1-003
Dimensions in Millimeters
©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
www.fairchildsemi.com
FQD13N10L / FQU13N10L N-Channel QFET® MOSFET
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