SEMTECH LS4448 Silicon epitaxial planar diode Datasheet

LS4448
SILICON EPITAXIAL PLANAR DIODE
fast switching diode in QuadroMELF case especially
LS-34
suited for automatic surface mounting.
Identical electrically to standard JEDEC 1N4448.
QuadroMELF
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
100
V
Reverse Voltage
VR
75
V
Rectified Current (Average)
Half Wave Rectification with Resist. Load (f ≥ 50 Hz)
IO
150
Surge Forward Current at t < 1 s and Tj = 25 OC
IFSM
Power Dissipation
1)
mA
500
Ptot
500
mA
1)
mW
Junction Temperature
Tj
175
O
Storage Temperature Range
TS
- 65 to + 175
O
1)
C
C
Valid provided that electrodes are kept at ambient temperature.
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IF = 5 mA
at IF = 100 mA
VF
0.62
-
0.72
1
V
Leakage Current
at VR = 20 V
at VR = 75 V
IR
-
25
5
nA
µA
V(BR)R
100
-
V
Ctot
-
4
pF
trr
-
4
ns
RthA
-
0.35 1)
K/mW
ηv
0.45
-
-
Reverse Breakdown Voltage
tested with 100 µA Pulses
Capacitance
at VF = VR = 0
Reverse Recovery Time
from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω
Thermal Resistance Junction to Ambient Air
Rectification Efficiency
at f = 100 MHz, VRF = 2 V
1)
Valid provided that electrodes are kept at ambient temperature.
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 12/01/2007
LS4448
Dynamic forward resistance
versus forward current
Forward characteristics
mA
10
LL 4448
LL 4448
3
10 4
Tj=25 oC
f=1KHz
5
2
10 2
o
Tj=100 C
iF
10 3
o
Tj=25 C
rf
10
5
2
10 2
5
1
2
10
10 -1
5
2
10 -2
0
1
2V
1
10 -1
10 -2
1
10 2 mA
10
VF
IF
Admissible power dissipation
versus ambient temperature
Relative capacitance
versus reverse voltage
Valid provided that leads at a distance of 8 mm from case
are kept at ambient temperature
mW
1000
LL 4448
LL 4448
Tj=25 oC
f=1MHz
900
1.1
800
P tot
Ctot(VR )
Ctot(0V)
700
1.0
600
500
0.9
400
300
0.8
200
0.7
100
0
0
o
200 C
100
0
0
Tamb
2
4
6
8
10 V
VR
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 12/01/2007
LS4448
Leakage current
versus junction temperature
nA
10 4
LL 4448
5
2
10 3
IR
5
Vo
~
~
~
2
5K
5
2nF
60
VRF =2V
2
10 2
10
Rectification Efficiency Measurement Circuit
5
VR =20V
2
1
0
o
200 C
100
Tj
Admissible repetitive peak forward current
versus pulse duratin
Valid provided that leads at a distance of 8 mm from case
are kept at ambient temperature
A
LL 4448
100
v=tp/T
I
5
4
3
I FRM
2
v=0
tp
10
I FRM
T=1/fp
t
0.1
5
4
3
2
0.2
1
0.5
T
5
4
3
2
0.1
10 -5
2
5
10 -4
2
5
10 -3
2
5
10 -2
2
5
10 -1
2
5
1
2
5
10 s
tp
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 12/01/2007
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