Fairchild FDP054N10 N-channel powertrenchâ® mosfet 100v, 144a, 5.5mî© Datasheet

FDP054N10
N-Channel PowerTrench® MOSFET
100V, 144A, 5.5mΩ
Features
Description
• RDS(on) = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
Application
• High Power and Current Handling Capability
DC to DC Converters / Synchronous Rectification
• RoHS Compliant
D
G
G D S
TO-220
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Parameter
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Avalanche Energy
Ratings
100
Units
V
±20
V
- Continuous (TC = 25oC, Silicon Limited)
144*
- Continuous (TC = 100oC, Silicon Limited)
102
- Continuous (TC = 25oC, Package Limited)
120
- Pulsed
A
(Note 1)
576
A
(Note 2)
1153
mJ
3.6
V/ns
(Note 3)
(TC = 25oC)
263
W
- Derate above 25oC
1.75
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
o
C
300
o
C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
Parameter
Ratings
RθJC
Thermal Resistance, Junction to Case
0.57
RθJA
Thermal Resistance, Junction to Ambient
62.5
©2009 Fairchild Semiconductor Corporation
FDP054N10 Rev. A
1
Units
o
C/W
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FDP054N10 N-Channel PowerTrench® MOSFET
April 2009
Device Marking
FDP054N10
Device
FDP054N10
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V, TC = 25oC
100
-
-
V
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25oC
-
0.01
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 100V, VGS = 0V
-
-
1
VDS = 100V, VGS = 0V, TC = 150oC
-
-
500
μA
IGSS
Gate to Body Leakage Current
VGS = ±20V, VDS = 0V
-
-
±100
2.5
3.5
4.5
V
-
4.6
5.5
mΩ
-
192
-
S
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
VGS = 10V, ID = 75A
gFS
Forward Transconductance
VGS = 10V, ID = 75A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 80V, ID = 75A,
VGS = 10V
(Note 4,5)
-
9985
13280
pF
-
935
1245
pF
-
390
585
pF
-
156
203
nC
-
53
-
nC
-
48
-
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 50V, ID = 75A
VGS = 10V, RGEN = 4.7Ω
(Note 4,5)
-
44
98
ns
-
92
194
ns
-
80
170
ns
-
39
88
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
144
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
576
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
-
-
1.3
V
trr
Reverse Recovery Time
-
57
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD =75A
dIF/dt = 100A/μs
-
121
-
nC
(Note 4)
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.41mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDP054N10 Rev. A
2
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FDP054N10 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1000
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
* Notes :
1. VDS = 20V
2. 250μs Pulse Test
ID, Drain Current[A]
ID, Drain Current[A]
1000
100
*Notes:
1. 250μs Pulse Test
100
o
150 C
o
25 C
10
o
-55 C
o
2. TC = 25 C
1
10
0.1
3
6
1
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
IS, Reverse Drain Current [A]
1000
6
VGS = 10V
5
VGS = 20V
4
o
150 C
100
o
25 C
10
Notes:
1. VGS = 0V
o
* Note : TC = 25 C
2. 250μs Pulse Test
3
0
100
200
ID, Drain Current [A]
300
1
0.2
400
Figure 5. Capacitance Characteristics
1.2
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
10000
Coss
1000
Crss
* Note:
1. VGS = 0V
2. f = 1MHz
100
0.1
FDP054N10 Rev. A
0.4
0.6
0.8
1.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
VGS, Gate-Source Voltage [V]
100000
Capacitances [pF]
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
7
RDS(on) [mΩ],
Drain-Source On-Resistance
4
5
6
VGS, Gate-Source Voltage[V]
1
10
VDS, Drain-Source Voltage [V]
VDS = 20V
VDS = 50V
VDS = 80V
8
6
4
2
* Note : ID = 75A
0
0
30
3
30
60
90
120
Qg, Total Gate Charge [nC]
150
180
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FDP054N10 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.4
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
* Notes :
1. VGS = 0V
2. ID = 10mA
0.8
-80
-40
0
40
80
120 160
o
TJ, Junction Temperature [ C]
2.0
1.6
1.2
0.8
* Notes :
1. VGS = 10V
2. ID = 75A
0.4
-80
200
Figure 9. Maximum Safe Operating Area
-40
0
40
80
120 160
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
150
1000
100μs
100
ID, Drain Current [A]
ID, Drain Current [A]
10μs
1ms
10ms
10
DC
Operation in This Area
is Limited by R DS(on)
1
100
Limitted by package
50
*Notes:
o
0.1
1. TC = 25 C
o
0.01
0.1
2. TJ = 175 C
3. Single Pulse
1
10
VDS, Drain-Source Voltage [V]
0
25
100 200
50
75
100
125
o
TC, Case Temperature [ C]
150
175
Figure 11. Transient Thermal Response Curve
Thermal Response [ZθJC]
1
0.5
0.1
0.2
0.1
0.01
t1
0.02
0.01
* Notes :
t2
o
1. ZθJC(t) = 0.57 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.001
-5
10
FDP054N10 Rev. A
PDM
0.05
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
4
1
10
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FDP054N10 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDP054N10 N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP054N10 Rev. A
5
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FDP054N10 N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id th
D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/ d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
FDP054N10 Rev. A
6
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TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
(45°
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.40 ±0.20
10.00 ±0.20
FDP054N10 Rev. A
7
www.fairchildsemi.com
FDP054N10 N-Channel PowerTrench® MOSFET
Mechanical Dimensions
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I40
FDP054N10 Rev. A
8
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FDP054N10 N-Channel PowerTrench® MOSFET
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