Renesas BCR5CM-12LBBB0 600v - 5a - triac medium power use Datasheet

Preliminary Datasheet
BCR5CM-12LB
R07DS1026EJ0100
Rev.1.00
Feb 25, 2013
600V - 5A - Triac
Medium Power Use
Features
 Non-Insulated Type
 Planar Passivation Type
 IT(RMS) : 5 A
 VDRM : 600 V
 IFGT I, IRGT I, IRGT III : 20 mA (10 mA)Note6
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
2, 4
3
1
1.
2.
3.
4.
T1 Terminal
T2 Terminal
Gate Terminal
T2 Terminal
1
2
3
Applications
Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, solenoid driver, small motor control, copying
machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Parameter
Voltage class
12
600
720
Symbol
VDRM
VDSM
Unit
V
V
Symbol
Ratings
Unit
RMS on-state current
IT(RMS)
5
A
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 128°C
Surge on-state current
ITSM
50
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t
10.4
A2s
PGM
PG(AV)
VGM
IGM
Tj
Tstg
—
3
0.3
10
2
– 40 to +150
– 40 to +150
2.1
W
W
V
A
°C
°C
g
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
R07DS1026EJ0100 Rev.1.00
Feb 25, 2013
Conditions
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Page 1 of 7
BCR5CM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2
Gate non-trigger voltage
I
II
III
I
II
III
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.8
Unit
mA
V
VFGT I
VRGT I
VRGT III
IFGT I
IRGT I
IRGT III
VGD
—
—
—
—
—
—
0.2/0.1
—
—
—
—
—
—
—
1.5
1.5
1.5
20Note6
20Note6
20Note6
—
V
V
V
mA
mA
mA
V
Notes: 1.
2.
3.
4.
5.
6.
Tc = 25°C, ITM = 7 A,
Instantaneous measurement
Tj = 25°C, VD = 6 V, RL = 6 ,
RG = 330 
Tj = 25°C, VD = 6 V, RL = 6 ,
RG = 330 
Rth(j-c)
—
—
3.0
°C/W
Tj = 125°C/150°C,
VD = 1/2 VDRM
Junction to caseNote3 Note4
(dv/dt)c
5/1
—
—
V/s
Tj = 125°C/150°C
Thermal resistance
Critical-rate of rise of off-state
Note5
commutating voltage
Test conditions
Tj = 150°C, VDRM applied
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured at the T2 tab 1.5 mm away from the molded case.
The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (IGT  10 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 2.5 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS1026EJ0100 Rev.1.00
Feb 25, 2013
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 7
BCR5CM-12LB
Preliminary
Performance Curves
100
7
5
90
Surge On-State Current (A)
102
3
2
101
Tj = 150°C
7
5
3
2
100
7
5
Tj = 25°C
3
2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Voltage (V)
70
60
50
40
30
20
10
2 3 4 5 7 101
2 3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
5
3
2 VGM = 10V
101
7
5
3 V = 1.5V
2 GT
100
7
5
3
2
80
0
100
4.0
PG(AV)
= 0.3W
PGM = 3W
IGM = 2A
IGT = 20mA
10–1
7
VGD = 0.1V
5
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
10–1
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
Rated Surge On-State Current
103
7
5
3
2
Typical Example
IRGT III
IRGT I
102
7
5
3
2
IFGT I
101
7
5
3
2
100
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20
0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
R07DS1026EJ0100 Rev.1.00
Feb 25, 2013
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
102 2 3 5 7 103 2 3 5
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR5CM-12LB
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
7
140
6 360° Conduction
Resistive,
5 inductive loads
4
3
2
1
0
0
1
2
4
5
6
7
8
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
1
3
2
4
5
6
8
7
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
All fins are black painted
aluminum and greased
140
120 × 120 × t2.3
120
100 × 100 × t2.3
100
60 × 60 × t2.3
80
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0
1
2
3
4
5
6
7
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
8
0
0.5
1.0
1.5
2.0
3.0
2.5
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
106
7
5
3
2
Typical Example
Holding Current (mA)
Ambient Temperature (°C)
3
Curves apply regardless
of conduction angle
RMS On-State Current (A)
160
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Case Temperature (°C)
8
Ambient Temperature (°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
R07DS1026EJ0100 Rev.1.00
Feb 25, 2013
102
7
5
4
3
2
VD = 12V
Distribution
Typical Example
101
7
5
4
3
2
100
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Page 4 of 7
BCR5CM-12LB
Preliminary
Breakover Voltage vs.
Junction Temperature
T2+, G+
Typical Example
T2–, G–
7
5
3
2
Distribution
T2+, G–
Typical Example
102
7
5
3
2
101
7
5
3
2
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20
0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
100
–60 –40 –20 0 20 40 60 80 100 120 140 160
160
Typical Example
Tj = 150°C
140
120
100
III Quadrant
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
3
2
100
7 0
10
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
I Quadrant
Minimum
Characteristics
Value
III Quadrant
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS1026EJ0100 Rev.1.00
Feb 25, 2013
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Latching Current (mA)
103
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Latching Current vs.
Junction Temperature
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
III Quadrant
I Quadrant
3
2
100
7 0
10
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
Minimum
Characteristics
Value
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR5CM-12LB
Preliminary
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
5
4
3
IRGT I
2
102
7
5
4
3
2
Typical Example
IRGT III
IFGT I
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω
Recommended Circuit Values Around The Triac
Load
6Ω
C1
A
6V
V
Test Procedure I
R1
A
6V
330Ω
V
C0
R0
330Ω
Test Procedure II
C1 = 0.1 to 0.47μF C0 = 0.1μF
R1 = 47 to 100Ω
R0 = 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS1026EJ0100 Rev.1.00
Feb 25, 2013
Page 6 of 7
BCR5CM-12LB
Preliminary
Package Dimensions
RENESAS Code
PRSS0004AG-A
Previous Code
TO-220ABS
MASS[Typ.]
2.1g
Unit: mm
4.5 ± 0.2
9.9 ± 0.2
+ 0.10
φ3.6 ± 0.2
(3.00)
9.2 ± 0.2
15.7 ± 0.2
1.30 – 0.05
1.62 Max
0.80 ± 0.10
13.08 ± 0.20
JEITA Package Code
SC-46
2.8 ± 0.1
Package Name
TO-220AB
2.6 Max
2.54
2.54
+ 0.10
0.50 – 0.05
10.0 ± 0.2
Ordering Information
Orderable Part Number
BCR5CM-12LB#BB0
BCR5CM-12LB-A8#BB0
Note:
Packing
Tube
Tube
Quantity
50 pcs.
50 pcs.
Remark
Straight type
A8 Lead form
Please confirm the specification about the shipping in detail.
R07DS1026EJ0100 Rev.1.00
Feb 25, 2013
Page 7 of 7
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