IXYS IXST45N120B High voltage igbt s series - improved scsoa capability Datasheet

IXSH 45N120B I
= 75 A
C25
IXST 45N120B V
= 1200 V
CES
"S" Series - Improved SCSOA Capability
VCE(sat) = 3.0 V
High Voltage IGBT
Preliminary data
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1200
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MW
1200
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C (limited by leads)
75
A
IC90
TC = 90°C
45
A
ICM
TC = 25°C, 1 ms
180
A
SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 5 W
Clamped inductive load
ICM = 90
@ 0.8 VCES
A
tSC
TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 5 W
10
ms
PC
TC = 25°C
300
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247
300
°C
6
g
TO-247 AD (IXSH)
(TAB)
G
C
E
TO-268 ( IXST)
G
E
G = Gate
S = Emitter
(TAB)
C = Collector
TAB = Collector
Features
• Epitaxial Silicon drift region
- fast switching
- small tail current
• MOS gate turn-on for drive simplicity
Applications
Symbol
Test Conditions
BVCES
IC
= 1.0 mA, VGE = 0 V
1200
VGE(th)
IC
= 250 mA, VCE = VGE
3
ICES
VCE = 0.8 • VCES
Note 1
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = IC90, VGE = 15 V
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 125°C
TJ = 125°C
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
V
2.5
2.6
6
V
50
2.5
mA
mA
±100
nA
3.0
V
V
•
•
•
•
AC motor speed control
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
• Welding
98713A (7/00)
1-2
IXSH 45N120B
IXST 45N120B
Symbol
Test Conditions
gfs
IC = IC90; VCE = 10 V,
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
16
Cies
VCE = 25 V, VGE = 0 V, f = 1 MHz
23
S
3300
pF
240
pF
Cres
65
pF
Qg
120
nC
40
nC
45
nC
Inductive load, TJ = 25°C
36
ns
IC = IC90, VGE = 15 V
RG = 5 W
VCE = 0.8 VCES
Note 3
27
ns
Coes
Qge
IC
= IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
t ri
td(off)
tfi
Eoff
TO-247 AD (IXSH) Outline
Dim. Millimeter
Min. Max.
Inches
Min. Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
mJ
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
360
380
500
750
ns
ns
13
22
td(on)
Inductive load, TJ = 125°C
38
ns
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
t ri
IC = IC90, VGE = 15 V
RG = 5 W, VCE = 0.8 VCES
Note 3
29
ns
G
H
1.65 2.13
4.5
0.065 0.084
0.177
2.9
mJ
440
700
ns
ns
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
22
mJ
Eon
td(off)
tfi
Eoff
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
0.42 K/W
RthJC
RthCK
(TO-247)
Notes: 1.
2.
3.
0.25
K/W
TO-268AA (D3 PAK)
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t £ 300 ms, duty cycle £ 2 %
Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
Dim.
Min. Recommended Footprint
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
L2
L3
L4
© 2000 IXYS All rights reserved
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
2-2
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