ONSEMI NTJD2152P

NTJD2152P
Trench Small Signal
MOSFET
8 V, Dual P−Channel, SC−88
ESD Protection
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Features
•
•
•
•
•
Leading –8 V Trench for Low RDS(ON) Performance
ESD Protected Gate
Small Footprint (2 x 2 mm)
Same Package as SC−70−6
Pb−Free Packages are Available
V(BR)DSS
RDS(on) TYP
ID Max
0.22 W @ −4.5 V
−8 V
−0.775 A
0.32 W @ −2.5 V
0.51 W @ −1.8 V
Applications
•
•
•
•
Load Power switching
DC−DC Conversion
Li−Ion Battery Charging Circuits
Cell Phones, Media Players, Digital Cameras, PDAs
SOT−363
SC−88 (6 LEADS)
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−8.0
V
Gate−to−Source Voltage
VGS
±8.0
V
ID
−0.775
A
Parameter
Continuous Drain
Current
(Based on RqJA)
Steady
State
TA = 25 °C
Power Dissipation
(Based on RqJA)
Steady
State
TA = 25 °C
Continuous Drain
Current
(Based on RqJL)
Steady
State
TA = 25 °C
Power Dissipation
(Based on RqJL)
Steady
State
TA = 85 °C
−0.558
PD
TA = 85 °C
0.14
ID
D1 G2 S2
−0.8
TA = 25 °C
Pulsed Drain Current
W
0.55
PD
±1.2
A
TJ,
TSTG
−55 to
150
°C
Continuous Source Current (Body Diode)
IS
−0.775
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
1
6
TA M G
G
SC−88/SOT−363
0.29
IDM
t ≤10 ms
MARKING DIAGRAM &
PIN ASSIGNMENT
A
−1.1
TA = 85 °C
TA = 85 °C
Top View
W
0.27
CASE 419B
STYLE 28
1
S1 G1 D2
TA
M
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol
Typ
Max
Unit
ORDERING INFORMATION
Junction−to−Ambient – Steady State
RqJA
400
460
°C/W
Junction−to−Lead (Drain) – Steady State
RqJL
194
226
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
Publication Order Number:
NTJD2152/D
NTJD2152P
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Symbol
Test Condition
Min
Typ
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−8.0
−10.5
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
−6.0
mV/°C
Parameter
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = −6.4 V
1.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±8.0 V
10
mA
VGS(TH)
VGS = VDS, ID = −250 mA
−1.0
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
−0.45
−0.83
2.2
mV/ °C
VGS = −4.5 V, ID = −0.57 A
0.22
0.3
VGS = −2.5 V, ID = −0.48 A
0.32
0.46
VGS = −1.8 V, ID = −0.20 A
0.51
0.9
VGS = −4.0 V, ID = −0.57 A
2.0
W
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = −8.0 V
VGS = −4.5 V, VDS = −5.0 V,
ID = −0.6 A
160
225
38
55
28
40
2.2
4.0
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
0.5
Gate−to−Drain Charge
QGD
0.5
pF
nC
0.1
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
VGS = −4.5 V, VDD = −4.0 V,
ID = −0.5 A, RG = 8.0 W
ns
13
23
td(OFF)
50
tf
36
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
VGS = 0 V,
IS = −0.23 A
TJ = 25°C
0.76
TJ = 125°C
0.63
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −0.77 A
2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
78
1.1
V
ns
NTJD2152P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = −4.5 V to −2.6 V
VGS = −2.2 V
−2 V
−1.8 V
1
0.8
−1.6 V
0.6
0.4
−1.4 V
0.2
−1.2 V
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (AMPS)
1.2
1.4
TJ = 25°C
0.5
2
4
6
VDS ≥ −10 V
1.2
1
0.8
0.6
TJ = 125°C
0.4
25°C
0.2
TJ = −55°C
0
8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.6
0.4
0.8
1.2
2
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (AMPS)
1.4
VGS = −4.5 V
0.4
0.3
TJ = 125°C
TJ = 25°C
0.2
TJ = −55°C
0.1
0
0.2
0
0.6
0.8
0.4
1
−ID, DRAIN CURRENT (AMPS)
1.2
1.4
0.5
TJ = 25°C
0.3
TJ = −55°C
0.2
0.1
0
0
0.2
0.6
0.4
0.8
1
−ID, DRAIN CURRENT (AMPS)
300
ID = −0.7 A
VGS = −4.5 V
and −2.5 V
C, CAPACITANCE (pF)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 125°C
1.2
1
0.8
−25
0
25
50
75
100
125
1.2
1.4
Figure 4. On−Resistance vs. Drain Current and
Temperature
1.6
0.6
−50
VGS = −2.5 V
0.4
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.4
2.4
150
TJ = 25°C
VGS = 0 V
240
Ciss
180
120
Coss
60
0
−8
Crss
−6
−4
−2
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
0
NTJD2152P
5
0.7
QG(TOT)
4
−IS, SOURCE CURRENT (AMPS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS
3
QGS
2
1
0
QGD
ID = −0.6 A
TJ = 25°C
0
0.4
0.8
1.2
1.6
2
Qg, TOTAL GATE CHARGE (nC)
VGS = 0 V
0.6
0.5
0.4
0.3
0.2
TJ = 150°C
0.1
TJ = 25°C
0
2.4
0
0.2
0.4
0.6
0.8
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
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4
1
NTJD2152P
ORDERING INFORMATION
Package Type
Tape and Reel Size†
NTJD2152PT1
SOT−363
3000 / Tape & Reel
NTJD2152PT1G
SOT−363
(Pb−Free)
3000 / Tape & Reel
NTJD2152PT2
SOT−363
3000 / Tape & Reel
NTJD2152PT2G
SOT−363
(Pb−Free)
3000 / Tape & Reel
NTJD2152PT4
SOT−363
10,000 / Tape & Reel
NTJD2152PT4G
SOT−363
(Pb−Free)
10,000 / Tape & Reel
Device Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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5
NTJD2152P
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
A3
6
5
4
HE
C
−E−
1
2
DIM
A
A1
A3
b
C
D
E
e
L
HE
3
L
b 6 PL
0.2 (0.008)
M
E
M
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
A
SOLDERING FOOTPRINT*
A1
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTJD2152P/D