Order this document by MGP21N60E/D SEMICONDUCTOR TECHNICAL DATA N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an energy efficient, ESD protected, and short circuit rugged device. • • • • • • IGBT IN TO–220 21 A @ 90°C 31 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON–VOLTAGE Industry Standard TO–220 Package High Speed: Eoff = 65 mJ/A typical at 125°C High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V Low On–Voltage 2.1 V typical at 20 A, 125°C Robust High Voltage Termination ESD Protection Gate–Emitter Zener Diodes C G C G E CASE 221A–09 STYLE 9 TO–220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 600 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 600 Vdc Gate–Emitter Voltage — Continuous VGE ±20 Vdc Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) IC25 IC90 ICM 31 21 42 Adc PD 142 1.14 Watts W/°C TJ, Tstg – 55 to 150 °C tsc 10 ms RθJC RθJA 0.9 65 °C/W TL 260 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw Apk 10 lbfSin (1.13 NSm) (1) Pulse width is limited by maximum junction temperature. Repetitive rating. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. IGBT Motorola Motorola, Inc. 1997 Device Data 1 MGP21N60E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 600 — — 870 — — mV/°C 15 — — Vdc — — — — 10 200 — — 50 — — — 1.7 1.5 2.2 2.1 — 2.5 4.0 — 6.0 10 8.0 — mV/°C gfe — 8.6 — Mhos pF OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 µAdc) Temperature Coefficient (Positive) V(BR)CES Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) V(BR)ECS Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C) ICES Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES Vdc µAdc mAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 10 Adc) (VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 20 Adc) VCE(on) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 25 Vdc, Vdc VGE = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance Cies — 1605 — Coes — 146 — Cres — 23 — td(on) — 29 — tr — 60 — td(off) — 238 — tf — 140 — Eoff — 0.80 1.15 mJ td(on) — 28 — ns tr — 62 — td(off) — 338 — tf — 220 — Eoff — 1.3 — mJ QT — 86 — nC Q1 — 18 — Q2 — 39 — — 7.5 — SWITCHING CHARACTERISTICS (1) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time (VCC = 360 Vdc, Vd IC = 20 Ad Adc, VGE = 15 Vdc, Vd L = 300 mH H, RG = 20 Ω) Energy losses include “tail” Turn–Off Switching Loss Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time (VCC = 360 Vdc, Vd IC = 20 Ad Adc, Vd L = 300 mH VGE = 15 Vdc, H, RG = 20 Ω, TJ = 125°C) 125 C) Energy losses include “tail” Turn–Off Switching Loss Gate Charge (VCC = 360 Vdc, Vdc IC = 20 Adc Adc, VGE = 15 Vdc) ns INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25″ from package to emitter bond pad) LE nH (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 Motorola IGBT Device Data MGP21N60E 60 20 V 12.5 V 40 VGE = 10 V 20 0 4 20 V 12.5 V 40 VGE = 10 V 20 6 8 20 TJ = 125°C 10 25°C 0 7 5 9 11 15 13 17 2.3 IC = 20 A 2.1 15 A 1.9 1.7 10 A VGE = 15 V 80 ms PULSE WIDTH 1.5 –50 0 –25 25 50 75 100 125 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Transfer Characteristics Figure 4. Collector–To–Emitter Saturation Voltage versus Junction Temperature VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) 4000 TJ = 25°C VGE = 0 V 3200 2400 Cies Coes 1600 VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 2. Output Characteristics 30 Cres 0 0 6 Figure 1. Output Characteristics 40 800 4 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) VCE = 100 V 5 ms PULSE WIDTH 50 2 0 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 60 IC , COLLECTOR CURRENT (AMPS) 15 V 0 2 0 C, CAPACITANCE (pF) 17.5 V TJ = 125°C IC , COLLECTOR CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) 60 15 V 17.5 V TJ = 25°C 5 10 15 20 25 20 QT 16 12 Q1 Q2 8 TJ = 25°C VCC = 300 V IC = 20 A 4 0 0 25 50 75 100 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Variation Figure 6. Gate–To–Emitter Voltage versus Total Charge Motorola IGBT Device Data 150 125 3 MGP21N60E Eoff , TURN–OFF ENERGY LOSSES (mJ) Eoff , TURN–OFF ENERGY LOSSES (mJ) 1.5 IC = 20 A 1.3 TJ = 125°C VDD = 360 V VGE = 15 V 1.1 15 A 0.9 0.7 10 A 0.5 15 25 35 1.2 15 A 0.8 10 A 0.4 45 –50 –25 0 25 50 75 100 RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Turn–Off Losses versus Gate Resistance Figure 8. Turn–Off Losses versus Junction Temperature 1.4 125 150 100 TJ = 125°C VCC = 360 V VGE = 15 V RG = 20 W 1.2 1.0 IC , COLLECTOR CURRENT (AMPS) Eoff , TURN–OFF ENERGY LOSSES (mJ) IC = 20 A 0 5 0.8 0.6 0.4 0.2 0 10 TJ = 125°C RGE = 20 W VGE = 15 V 1 0 4 VCC = 360 V VGE = 15 V RG = 20 W 1.6 5 10 15 20 1 10 100 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 9. Turn–Off Losses versus Collector Current Figure 10. Reverse Biased Safe Operating Area 1000 Motorola IGBT Device Data MGP21N60E PACKAGE DIMENSIONS –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N CASE 221A–09 TO–220AB ISSUE Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 9: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 GATE COLLECTOR EMITTER COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488 Customer Focus Center: 1–800–521–6274 Mfax: [email protected] – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ Motorola IGBT Device Data ◊ MGP21N60E/D 5